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Japanese Journal of Applied Physics

Tunable Slow Light of 1.3 µm Region in Quantum Dots at Room Temperature

Hideki Gotoh, Shu‐Wei Chang, S. L. Chuang, Hiroshi Okamoto, Yasuo Shibata

Published Apr 1, 2007• 7 citations
Publisher

Abstract

We report tunable slow light (slowlight) in the 1.3 µm region in quantum dots (QDs) observed at room temperature. The light transmission times are measured by the counter-propagating pump-and-probe method in waveguides with InAs QDs as active regions. The maximum slowdown factor is 2.5 for a 500-µm-long sample. This corresponds to a 2.5 times longer propagation time in the waveguide. The slowdown can be well controlled by tuning the pump beam. This pump power dependence of the slowdown factor agrees well with theoretical predictions obtained by coherent population oscillation (CPO). We also report a method that realizes larger slow light effects.

DOI
10.1143/jjap.46.2369

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We report tunable slow light (slowlight) in the 1.3 µm region in quantum dots (QDs) observed at room temperature. The light transmission times are measured by the counter-propagating pump-and-probe method in waveguides with InAs QDs as active regions. The maximum slowdown factor is 2.5 for a 500-µm-long sample. This corresponds to a 2.5 times longer propagation time in the waveguide. The slowdown can be well controlled by tuning the pump beam. This pump power dependence of the slowdown factor agrees well with theoretical predictions obtained by coherent population oscillation (CPO). We also report a method that realizes larger slow light effects.
We develop a model for slow light based on the coherent population oscillation of quantum dots at room temperature. With the absorption dip and corresponding variation of the refractive index due to the coherent population beating induced by the pump and probe signal, quantum dots can be used as a slow-light medium. Our theoretical model matches the experimental results very well. We also experimentally and theoretically demonstrate that both the forward-bias injection current and reverse-bias voltage can change the group index in a semiconductor quantum-dot waveguide. Our results indicate that quantum-dot devices can be potentially used as electrically and optically controllable slow light devices
We demonstrate room-temperature slow light that is electrically and optically controllable by using a quantum-dot (QD) semiconductor optical amplifier (SOA) at zero and low bias below the transparency current. The absorption spectrum of the QD SOA exhibits a spectral dip with a corresponding group-index dispersion and group delay owing to coherent population oscillation caused by the interaction of pump and probe laser light near resonance of the first heavy-hole-conduction-state transition. At an optical pump power of approximately 0.3 mW inside the single-mode waveguide without current injection, a group-index change of 3.0 with a bandwidth of 2 GHz was measured. This group-index change can be controlled by injection of electrical current and by changing the optical pump power.
Coherent population oscillations (CPO) in quantum dots (QDs) have been utilized in this article to achieve slow and fast light effects in a semiconductor optical amplifier. These phenomena have been achieved based on a pump-probe scheme and tuning the input current source. Coupled rate equations have been developed to determine the carrier dynamics and occupation probabilities. The effects of barrier, wetting layer and excited state densities have been included for CPO phenomenon occurring between the ground states. A quantum disc model embedded in another disc has been assumed for modeling the QDs and density matrix elements are used to obtain induced polarization at the signal frequency after determining the energy states and state probabilities. Tunable absorption dip, corresponding refractive index variation and group index, exhibit widely tunable slow and fast light characteristics by changing the bias condition.
Slow and fast light processes, based on both structural and material dispersions, are realized in a wide tuning range in this article. Coherent population oscillations (CPO) in electrically tunable quantum dot semiconductor optical amplifiers lead to a variable group index ranging from the background index ( n bgd ) to ∼ 30. A photonic crystal waveguide is then dispersion engineered and a group index of 260 with the normalized delay-bandwidth product (NDBP) of 0.65 is achieved in the proposed waveguide. Using comprehensive numerical simulations, we show that a considerable enhancement of slow light effect can be achieved by combining both the material and the structural dispersions in the proposed active QDPCW structure. We compare our developed FDTD results with analytical results and show that there is good agreement between the results, which demonstrates that the proposed electrically-tunable slow light idea is obtainable in the QDPCW structure. We achieve a total group index in a wide tuning range from n bgd to ∼ 1500 at the operation bandwidth, which shows a significant enhancement compared with the schemes based only on material or structural dispersions. The tuning range and also NDBP of the slow light scheme are much larger than those of the electrically tunable CPO process.
This is a detailed study of slow light based on quantum effects in semiconductor nanostructures. We propose to implement an optical buffer using semiconductor quantum dots and quantum wells based on coherent population oscillation and spin related electromagnetically induced transparency. We identify different pump-and-probe schemes and develop comprehensive theoretical models which include important physical mechanisms in semiconductors. Semiconductors have unique properties which are inaccessible to other slow light media, and these enable the possibilities of controlling the semiconductor-based optical buffer in addition to the optical method. We investigate how to electrically control group index (slowdown factor) in quantum dots by using reverse bias voltage and forward injection current. We also develop a model to use the anisotropy of the light-hole exciton to vary the slowdown factor via two different mechanisms (coherent population oscillation and spin related electromagnetically induced transparency). Finally, we propose an idea to use the strain to control the spin relaxation time in semiconductors, which can help spin-dependent slow light in semiconductors. This research shows that the semiconductor is a promising candidate to demonstrate an optical buffer and can provide more flexible control than other slow light materials.