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Physical review. B, Condensed matter

Spectral hole burning and light-induced band splitting in the gain region of highly excited semiconductors

A. E. Paul, Rolf H. Binder, S. W. Koch

Published Mar 15, 1992• 5 citations
Publisher

Abstract

A many-body analysis of spectral hole burning and light-induced band renormalization in the gain region of an initially inverted semiconductor is presented. The results are based on the numerical solution of the semiconductor Bloch equations, specialized to the case of noncopropagating pump-and-probe light fields. These equations account for coherent pump-probe scattering and include the Coulomb correlation between charge carriers. They also contain optical dephasing and carrier-carrier scattering rates that are computed within the random-phase approximation.

DOI
10.1103/physrevb.45.5879

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A many-body analysis of spectral hole burning and light-induced band renormalization in the gain region of an initially inverted semiconductor is presented. The results are based on the numerical solution of the semiconductor Bloch equations, specialized to the case of noncopropagating pump-and-probe light fields. These equations account for coherent pump-probe scattering and include the Coulomb correlation between charge carriers. They also contain optical dephasing and carrier-carrier scattering rates that are computed within the random-phase approximation.
The polarization dephasing time has been measured across the gain region, at the transparency point, and into the absorption region of an optically excited GaAs multiple-quantum-well sample using spectral hole burning and degenerate four-wave mixing techniques. We observe strongly energy-dependent dephasing rates with a minimum at the crossover from gain to absorption. Numerical results for the microscopically calculated carrier-carrier scattering rates for a two-component electron-hole plasma in quantum wells show fair agreement with the experimental findings.
The availability of femtosecond pulses in the optical-frequency regime allows the study of coherent effects in the interaction between semiconductors and light. Because the properties of the exciting pulses become important ingredients in spectroscopy, the theoretical analysis must treat the complete time dependence of the system. For this purpose we use the semiconductor Bloch equations (SBE),1-3 which are the coupled equations of motion for the interband polarization and the electron and hole populations for an interacting electron-hole system in the random-phase approximation. The equations describe the electron-hole Coulomb attraction leading to excitonic features; they contain phasespace filling and band-gap renormalization effects, as well as the dipole interaction with the applied light field.
This paper analyzes the interaction of a strong wave and one or two probe waves with an intrinsic semiconductor medium which is partially inverted by an injection current. The many-body interactions of the electron-hole excitations are described using recently developed generalized Bloch equations for semiconductors. Coupled-mode equations for the different light fields are derived and solved, and predict that the gain and the coupling coefficients experience asymmetric dips. These dips are generated by scattering of the strong field off carrier-density pulsations induced by the pump-probe interference.
The nonequilibrium dynamics of a two-dimensional electron-hole gas is studied in the regime of strong and resonant pumping of the exciton resonance. The Coulomb collision rates are consistently determined by taking into account the light-induced coherence of the two-band system that leads to a dressing of the carrier spectral functions. The light dressing dramatically reduces the Coulomb scattering efficiency. Results are presented for Rabi oscillations in the time domain and dynamical Stark splitting in the pump-probe absorption spectra.
Optical interband excitonic absorption of semiconductor quantum wells (QW’s) driven by a coherent pump field is investigated on the basis of semiconductor Bloch equations. The pump field has a photon energy close to the intersubband spacing between the first two conduction subbands in the QW’s. An external weak optical field probes the interband transition. The excitonic effects and pump-induced population redistribution within the conduction subbands in the QW system are included. When the density of the electron–hole pairs in the QW structure is low, the pump field induces an Autler–Townes splitting of the exciton absorption spectrum. The split size and the peak positions of the absorption doublet depend not only on the pump frequency and intensity but also on the carrier density. As the density of the electron–hole pairs is increased, the split contrast (the ratio between the maximum and the minimum values) is decreased, because the exciton effect is suppressed at higher densities owing to the many-body screening.