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Journal of the Optical Society of America B

Phonon-induced spectral holes in the gain region of an inverted semiconductor

Georg Mohs, Rolf H. Binder, B. Fluegel, Harald W. Giessen, Nasser N. Peyghambarian

Published Jun 1, 1996• 2 citations
Publisher

Abstract

Spectral-hole-burning experiments are performed in the gain region of an inverted semiconductor multiple quantum well. We find not only a spectral hole at the pump-pulse frequency but also replicas at higher frequencies. These replicas are qualitatively explained in terms of carrier–phonon interactions in which high-energy carriers relax into the optically induced spectral hole by LO-phonon emission.

DOI
10.1364/josab.13.001298

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Spectral-hole-burning experiments are performed in the gain region of an inverted semiconductor multiple quantum well. We find not only a spectral hole at the pump-pulse frequency but also replicas at higher frequencies. These replicas are qualitatively explained in terms of carrier–phonon interactions in which high-energy carriers relax into the optically induced spectral hole by LO-phonon emission.
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The polarization dephasing time has been measured across the gain region, at the transparency point, and into the absorption region of an optically excited GaAs multiple-quantum-well sample using spectral hole burning and degenerate four-wave mixing techniques. We observe strongly energy-dependent dephasing rates with a minimum at the crossover from gain to absorption. Numerical results for the microscopically calculated carrier-carrier scattering rates for a two-component electron-hole plasma in quantum wells show fair agreement with the experimental findings.
Persistent spectral-hole-burning (PSHB) phenomena have been observed in many kinds of semiconductor quantum dots (QDs). Luminescence hole burning and charged excitons have been observed in CuCl QDs in NaCl crystals. The observed PSHB phenomena are explained by the ionization of QDs. The energy of photoionized QDs is changed from the original energy and their new energies depend on the spatial arrangement of trapped carriers. Quantum confinement of carriers and the resulting strong Coulomb interaction between confined carriers and trapped carriers cause the energy change. PSHB has been widely applied to site-selective spectroscopy of QDs. Size-dependent excited exciton quantum states in CuCl quantum cubes, size-dependent excited electron-hole quantum states in CdTe QDs and renormalization of longitudinal optical phonons confined in CuCl QDs have been revealed by studying sideband holes. This also allowed the measurement of accumulated photon echo, which clarified the very sharp homogeneous spectral linewidth of QDs under weak excitation conditions.
Using laser pulses of duration comparable to semiconductor relaxation and dephasing times, the coherent phenomena common to two-level systems have been demonstrated in II-VI and III-V semiconductors. These light-matter interactions are characterized by electrons and holes in their initially excited states and/or a macroscopic polarization that persists after the excitation. A nonthermal carrier distribution was observed in bulk CdSe, demonstrating the extremely fast energy relaxation possible when carrier-LO-phonon scattering is included. Quantum-confined CdSe microcrystallites were then employed to limit the available decay avenues. The one and two-pair transitions were characterized, and using spectral hole-burning, energy relaxation was shown to be substantially slower than in bulk. Dipole dephasing remained very rapid. Persistent macroscopic polarization was demonstrated in semiconductors through pump and probe experiments conducted on time scales faster than the inverse linewidth of the exciton. In the first set of experiments, it was found that the exciton optical Stark shift deviates from that predicted by a steady-state theory. The shift is smaller than expected and lasts longer than the pump pulse. Both effects are explained by free evolution of the exciton's polarization. Transient exciton bleaching is observed and shown to be a result of adiabatic following. In a second study of coherent polarization, spectral oscillations at negative delay times were studied. Oscillations were measured in a wide variety of semiconductors, temporally preceding several different pump-probe phenomena. By comparison with a semiclassical theory, it was shown that spectral oscillations in the spectral region of the exciton are evidence of persistent exciton polarization. Oscillations in the band are due to four wave mixing of the pump and probe beams.
Interactions of sidemodes in a semiconductor gain medium in the presence of an oscillating mode are studied both for beat frequencies comparable to interband relaxation rates as well as those comparable to intraband relaxation rates. The former applies to the complete many-body theory, provided the strong mode Rabi frequency is small compared to the intraband relaxation rates. Population pulsations play an important role in both cases, with spectral hole burning playing an equally important role for the large beat frequency case.