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Journal of Luminescence

Optical spin polarisation of the N-V centre in diamond

Joanne Harrison, Matthew J. Sellars, Neil B. Manson

Published Feb 5, 2004• 114 citations
Publisher
DOI
10.1016/j.jlumin.2003.12.020

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The negative Nitrogen-Vacancy (NV) colour centre in diamond is an atomic-level impurity that is remarkably well suited for quantum information processing and quantum metrology applications. Underlying these properties is the fact that optical illumination causes the NV centre to preferentially populate one of its three spin levels. The mechanism that gives rise to this spin polarisation has not been well understood, despite intense research interest in the NV centre and its applications. This thesis arrives at an account of the spin polarisation mechanism, although a detailed theoretical treatment remains outstanding. The energy level structure of the NV centre is investigated using techniques of solid state spectroscopy. These include absorption and photoluminescence measurements made on diamonds at cryogenic and room temperatures in the presence of uniaxial stress, magnetic fields, and microwaves. Pulsed light experiments allow the dynamic processes within the NV centre to be measured. It is shown that at room temperature the orbital doublet excited state behaves like an orbital singlet, and this description is elegantly confirmed by single-site observations. This picture of the excited state is inconsistent with cryogenic measurements, and its behaviour is examined across a range of temperatures in order to resolve this tension. It is shown that electron-vibration interaction accounts for the quenching of orbital properties in the excited state with temperature. A new optical transition within the NV centre is reported at a wavelength of 1042 nm. It is established that this transition occurs between the intermediate singlet levels which are thought to provide the decay pathway that produces spin polarisation. The results are consistent with this understanding, and the order and properties of these singlet levels are established. Electron-vibration interaction is observed to be important within the singlet system. It is shown that electron-vibration interaction is an important detail in the NV optical pumping cycle. Taking it into consideration leads to the first plausible physical description of the spin polarisation mechanism. -- provided by Candidate.

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New Journal of Physics•Apr 13, 2017•35 citations
The negative Nitrogen-Vacancy (NV) colour centre in diamond is an atomic-level impurity that is remarkably well suited for quantum information processing and quantum metrology applications. Underlying these properties is the fact that optical illumination causes the NV centre to preferentially populate one of its three spin levels. The mechanism that gives rise to this spin polarisation has not been well understood, despite intense research interest in the NV centre and its applications. This thesis arrives at an account of the spin polarisation mechanism, although a detailed theoretical treatment remains outstanding. The energy level structure of the NV centre is investigated using techniques of solid state spectroscopy. These include absorption and photoluminescence measurements made on diamonds at cryogenic and room temperatures in the presence of uniaxial stress, magnetic fields, and microwaves. Pulsed light experiments allow the dynamic processes within the NV centre to be measured. It is shown that at room temperature the orbital doublet excited state behaves like an orbital singlet, and this description is elegantly confirmed by single-site observations. This picture of the excited state is inconsistent with cryogenic measurements, and its behaviour is examined across a range of temperatures in order to resolve this tension. It is shown that electron-vibration interaction accounts for the quenching of orbital properties in the excited state with temperature. A new optical transition within the NV centre is reported at a wavelength of 1042 nm. It is established that this transition occurs between the intermediate singlet levels which are thought to provide the decay pathway that produces spin polarisation. The results are consistent with this understanding, and the order and properties of these singlet levels are established. Electron-vibration interaction is observed to be important within the singlet system. It is shown that electron-vibration interaction is an important detail in the NV optical pumping cycle. Taking it into consideration leads to the first plausible physical description of the spin polarisation mechanism. -- provided by Candidate.
This thesis reports research conducted on point defects in single crystal diamond utilising the complementary techniques of electron paramagnetic resonance (EPR), optical absorption and photoluminescence (PL) spectroscopy. Intentional silicon-doping of chemical vapour deposition (CVD) diamond allowed the production of samples grown on differently oriented substrates and containing distinct silicon isotopic abundances. The EPR spectrum of the neutral charge state of the silicon split-vacancy centre in diamond, (Si-V)0, has been characterised in the literature. Evidence for the assignment of the 1.31 eV zero phonon line (ZPL) seen in absorption and PL to the 3A2g -> 3A1u transition arising at (Si-V)0 is presented. Reversible charge transfer between the negatively charged centre, (Si-V)− (ZPL at 1.68 eV), and (Si-V)0 enabled the determination of calibration factors relating defect concentrations to their respective ZPL intensities. Preferential alignment of trigonal centres, such as (Si-V), in CVD material grown on {110}-substrates has been observed. The formation of (Si-V) centres during CVD synthesis and via irradiation and annealing of silicon-doped diamond was studied. Variable temperature EPR spectroscopy under illumination was used to investigate the optical spin polarisation (SP) of the (Si-V)0 3A2g ground state. Two different mechanisms for the SP are considered; selective intersystem crossing of (Si-V)0, and photoionisation of (Si-V)−. The properties of (Si-V)0 are compared to those of the extensively studied negatively charged nitrogen vacancy centre, (N-V)−. The effective spin-lattice relaxation and spin polarisation rates for both centres during continuous illumination are explored using pulsed EPR methods. A new defect, labelledWAR3, with spin S = 1 2 was observed in silicon-doped diamond and characterised using multifrequency EPR. Analysis of the data revealed that WAR3 is the neutral charge state of a silicon divacancy complex decorated by a hydrogen atom, (Si-V2:H)0. The experimentally derived 29Si and 1H hyperfine parameters are in good agreement with the values calculated using the spindensity- functional technique, confirming this model and ruling out a non-planar structure.
Using shallow implantation of ions and molecules with masses centred at 27 atomic mass units (amu) in diamond, a new artificial optical centre with unique properties has been created. The centre shows a linearly polarised fluorescence with a main narrow emission line mostly found at 582 nm, together with a weak vibronic sideband at room temperature. The fluorescence lifetime is ∼2 ns and the brightest centres are more than three times brighter than the nitrogen-vacancy centres. A majority of the centres shows stable fluorescence whereas some others present a blinking behaviour, at faster or slower rates. Furthermore, a second kind of optical centre has been simultaneously created in the same diamond sample, within the same ion implantation run. This centre has a narrow zero-phonon line (ZPL) at ∼546 nm and a broad phonon sideband at room temperature. Interestingly, optically detected magnetic resonance (ODMR) has been measured on several single 546 nm centres and two resonance peaks are found at 0.99 and 1.27 GHz. In view of their very similar ODMR and optical spectra, the 546 nm centre is likely to coincide with the ST1 centre, reported once (with a ZPL at 550 nm), but of still unknown nature. These new kinds of centres are promising for quantum information processing, sub-diffraction optical imaging or use as single-photon sources.