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Superconductor Science and Technology

Fabrication and voltage divider operation of a T flip-flop using high-Tc interface-engineered Josephson junctions

Jun-Ho Kim, Sang‐Hyeob Kim, Gun Yong Sung

Published Aug 2, 2002• 3 citations
Publisher

Abstract

We designed and fabricated a rapid-single-flux-quantum T flip-flop (TFF) with high- T c interface-engineered Josephson junctions. Y 1 Ba 2 Cu 3 O 7− d and Sr 2 AlTaO 6 were deposited for the superconducting layer and the insulating layer, respectively. The Josephson junction was formed through an interface treatment process using Ar ion milling and vacuum annealing. We simulated a TFF circuit and designed a physical layout using WRspice and Xic. The fabricated TFF has a minimum junction width of 3 μm. Through the measurement of the voltage divider operation, the maximum operation frequency was estimated to be 53 GHz at 22 K and 106 GHz at 12 K.

DOI
10.1088/0953-2048/15/9/308

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We designed and fabricated a rapid-single-flux-quantum T flip-flop (TFF) with high- T c interface-engineered Josephson junctions. Y 1 Ba 2 Cu 3 O 7− d and Sr 2 AlTaO 6 were deposited for the superconducting layer and the insulating layer, respectively. The Josephson junction was formed through an interface treatment process using Ar ion milling and vacuum annealing. We simulated a TFF circuit and designed a physical layout using WRspice and Xic. The fabricated TFF has a minimum junction width of 3 μm. Through the measurement of the voltage divider operation, the maximum operation frequency was estimated to be 53 GHz at 22 K and 106 GHz at 12 K.
A rapid-single-flux-quantum toggle-flip-flop logic gate was fabricated using high-temperature superconducting interface-engineered Josephson junctions. It was shown that the gate can operate as a voltage divider up to 155 GHz at 15 K and 19 GHz at 27 K. At the same time, the temperature dependence of the IcRn product and the maximum divided voltage was compared. As a result, it was found that the ratio of these values is 0.4–0.1 for 15 K>T>27 K. Circuit simulation with noise sources reveals this peculiar temperature dependence of the maximum divided voltage.
We report a developed single-flux-quantum (SFQ) circuit fabrication process for vertically-stacked interface-treated Josephson junctions by using high-temperature superconductor (HTS) and also report the 500 GHz operation of a toggle flip-flop (TFF). As the first trial of the circuit operation, we fabricated TFF circuits, because TFF is used as a benchmark circuit to indicate potential of the circuit operating speed. To develop the circuit fabrication process, we utilized the counter YBCO layer as a wiring layer. We obtained resistively-shunted-junction behavior of single junction fabricated by new process. In addition, we observed current-voltage characteristics at the input port and the output port of the TFF, and confirmed that the input voltage coincided with twice the output voltage up to 1.1 mV at 4.2 K, which corresponds to the correct operation up to 500 GHz. This frequency is the highest value in HTS circuits ever observed, which suggests the high potential of the vertically-stacked JJs for the circuit operation.
Using self-shunted MgB2/MgO/MgB2 Josephson junctions, we have designed, fabricated, and tested a rapid single flux quantum toggle flip flop (TFF) circuit. The junctions used MgB2 films grown by hybrid physical-chemical vapor deposition with MgO barrier layer and insulating layer deposited by RF magnetron sputtering. The result showed the frequency-division function of the TFF circuit, evidenced by the output voltage being half the input voltage, up to 63 GHz at 20 K and 180 GHz at 3.2 K, which demonstrates the potential of high operating speeds and high working temperatures in MgB2 superconducting integrated circuits.
We fabricated and tested high-temperature superconducting (HTS) rapid-single-flux-quantum (RSFQ) circuits using interface-engineered Josephson junction (IEJ). The characteristics of high-speed operation were examined by voltage-divider operation based on the toggle-flip-flop circuit. An operation at 155 GHz was obtained at 15 K and the proper functioning of the voltage divider was observed up to 27 K. Temperature dependence of the maximum operation speed was analyzed by circuit simulation with thermal-noise sources. To achieve higher speed operation using a Josephson junction with a higher I/sub c/R/sub n/ product, we also fabricated an RSFQ balanced comparator using IEJ; proper switching characteristics of the circuit was confirmed up to 190 GHz at 30 K. The bias condition dependencies were studied based on the circuit simulations in the relationship of the I/sub c/R/sub n/ product. The results of circuit simulation indicate that a Josephson junction with an I/sub c/R/sub n/ product of more than 0.7 mV is required for high-speed operation (100 GHz) in high-temperature range (30-40 K). We believe that the IEJ is a promising junction candidate for realizing high-speed operation in a high-temperature range.
Rapid Single Flux Quantum (RSFQ) T-flip flops (TFFs) operating up to 770 GHz have been demonstrated at 4.2 K. The devices, consisting of either resistively shunted or unshunted Josephson junctions, are fabricated using a planarized Nb/AlO/sub x//Nb trilayer process. Electron beam lithography is used to pattern all levels with a minimum junction area less than 0.1 /spl mu/m/sup 2/. Critical current densities of 0.5 mA//spl mu/m/sup 2/ and 2.5 mA//spl mu/m/sup 2/ are used for the shunted (tested at 1.8 K) and unshunted devices (tested at 4.2 K) respectively. The input and output frequencies of the TFFs are obtained from the input and output voltages by the Josephson relation. The output voltage is exactly half of the input voltage when the divide-by-two operation is correct.
We fabricated single flux quantum RS flip-flop circuits by using ramp-edge Josephson junctions and tested their performance. The junctions were constructed with two Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-x/ (YBCO) electrodes and a barrier layer. As barrier materials we used cobalt-doped YBCO. To insulate between YBCO layers we used Sr/sub 2/AlTaO/sub 6/ (SAT) thin films. We also fabricated RS flip-flop circuits by using YBCO ground planes to reduce the inductance of YBCO film. The fabricated Josephson junctions showed typical RSJ-like current-voltage (I-V) characteristics above 50 K. We could successfully demonstrate the correct operation of the RS flip-flop circuits at the temperatures near 50 K. We used a computer controlled digital measurement set-up to test the circuits. The RS flip-flop circuit fabricated on a ground plane showed more definite set and reset states on the voltage-flux (V-/spl phi/) modulation curves of the read SQUID than those of the circuit made without ground plane. This may be attributed to the shielding effect by a YBCO ground plane.