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Physical Review B

Cotunneling suppression in a hybrid single-electron transistor by a dissipative electromagnetic environment

Vladimir Bubanja

Published May 11, 2011• 9 citations
Publisher

Abstract

We study electron transport through a hybrid single-electron transistor, consisting of a superconducting island and normal-metal electrodes, in the Coulomb blockade regime. We derive analytic expressions for the elastic and inelastic cotunneling currents, which exhibit power law suppression induced by the dissipative electromagnetic environment. The results can be used to improve the accuracy of hybrid devices employed in electrical metrology and for noise measurements in quantum information processing.

DOI
10.1103/physrevb.83.195312

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We study electron transport through a hybrid single-electron transistor, consisting of a superconducting island and normal-metal electrodes, in the Coulomb blockade regime. We derive analytic expressions for the elastic and inelastic cotunneling currents, which exhibit power law suppression induced by the dissipative electromagnetic environment. The results can be used to improve the accuracy of hybrid devices employed in electrical metrology and for noise measurements in quantum information processing.
We consider the influence of the electromagnetic fluctuations on the transport properties of a hybrid single electron transistor, consisting of superconducting electrodes and a normal-metal island, when operated as a turnstile. We derive the analytic expressions for the rates near the thresholds of single electron tunneling, Andreev reflection, and Cooper-pair–electron cotunneling processes. These results show that the dissipative on-chip impedance suppresses the rates of the undesirable higher-order tunneling processes much stronger than the single electron tunneling which can therefore be utilized to increase the accuracy of such a device in quantum metrological applications.
We consider the transport properties of a single-electron transistor consisting of a diffusive normal-metal island and superconducting electrodes. We show that the interplay of a dissipative impedance of the gate electrode, a weak magnetic field, and a charging energy of the island causes a suppression of the critical supercurrent of the transistor. When the device is voltage biased, pumping of single electrons can be achieved by a periodic modulation of the gate voltage. We derive the analytic expressions for the error rates and show that they are suppressed by the applied magnetic field.
We observed current-voltage characteristics of superconducting single charge transistors with on-chip resistors of R approximately R(Q)=h/4e(2) approximately 6.45 kOmega, which are explained in terms of Cooper pair cotunneling. Both the effective strength of Josephson coupling and the cotunneling current are modulated by the gate-induced charge on the transistor island. For increasing values of the resistance R we found the Cooper pair current at small transport voltages to be dramatically suppressed.
We study the interplay between Coulomb blockade and superconductivity in a tunable superconductor-superconductor-normal-metal single-electron transistor. The device is realized by connecting the superconducting island via an oxide barrier to the normal-metal lead and with a break junction to the superconducting lead. The latter enables Cooper pair transport and (multiple) Andreev reflection. We show that these processes are relevant also far above the superconducting gap and that signatures of Coulomb blockade may reoccur at high bias while they are absent for small bias in the strong-coupling regime. Our experimental findings agree with simulations using a rate equation approach in combination with the full counting statistics of multiple Andreev reflection.
We report measurements of charge configurations and charge transfer dynamics in a hybrid single-electron box composed of aluminum and copper. We used two single-electron transistors (SETs) to simultaneously read out different parts of the box, enabling us to map out stability diagrams of the box and identify various charge transfer processes in the box. We further characterized the elastic cotunneling in the box, which is an important source of error in electron turnstiles consisting of hybrid SETs, and found that the rate was as low as 1 Hz at degeneracy and compatible with theoretical estimates for electron tunneling via virtual states in the central superconducting island of the box.
We have experimentally studied Coulomb oscillation in a superconducting single-electron transistor, where electromagnetic-environment impedance was controlled using a one-dimensional array of superconducting quantum interference devices. By decreasing environment impedance, the Coulomb oscillation exhibited a crossover from 2e2e2e to 1e1e1e periodicity. In addition, the 1e1e1e component was enhanced when additional noise was introduced by connecting a potential meter to the central island of the transistor. We propose a theoretical analysis for this parity effect that includes the effect of fluctuations arising from the finite noise temperature of the electromagnetic environment.