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arXiv:1407.1652 · Applied Physics Letters

Experimental determination of the elastic cotunneling rate in a hybrid single-electron box

Chia-Heng Sun, Po-Chen Tai, Jheng-An Jiang, Cen-Shawn Wu, Jeng-Chung Chen, Yung‐Fu Chen

Published Jun 9, 2014• 1 citation
arXivHTMLPDF

Abstract

We report measurements of charge configurations and charge transfer dynamics in a hybrid single-electron box composed of aluminum and copper. We used two single-electron transistors (SETs) to simultaneously read out different parts of the box, enabling us to map out stability diagrams of the box and identify various charge transfer processes in the box. We further characterized the elastic cotunneling in the box, which is an important source of error in electron turnstiles consisting of hybrid SETs, and found that the rate was as low as 1 Hz at degeneracy and compatible with theoretical estimates for electron tunneling via virtual states in the central superconducting island of the box.

DOI
10.1063/1.4882869

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We report measurements of charge configurations and charge transfer dynamics in a hybrid single-electron box composed of aluminum and copper. We used two single-electron transistors (SETs) to simultaneously read out different parts of the box, enabling us to map out stability diagrams of the box and identify various charge transfer processes in the box. We further characterized the elastic cotunneling in the box, which is an important source of error in electron turnstiles consisting of hybrid SETs, and found that the rate was as low as 1 Hz at degeneracy and compatible with theoretical estimates for electron tunneling via virtual states in the central superconducting island of the box.
In a superconducting single-electron transistor (SSET), we demonstrate a charge turnstile regime based on higher-order tunneling as a major transport mechanism. In this regime, the quantized current appears as a sequence of Cooper pair-electron cotunneling events cycled by a periodic gate signal and transferring a discrete three-electron charge per cycle. Operating as a relatively slow, higher-order tunneling system, the 3e-turnstile exhibits stable current plateaus in the sub-pA range. The device could be useful for generating precise ultralow currents as well as for experimental evaluation of cotunneling error rates in electron turnstiles.
We study electron transport through a hybrid single-electron transistor, consisting of a superconducting island and normal-metal electrodes, in the Coulomb blockade regime. We derive analytic expressions for the elastic and inelastic cotunneling currents, which exhibit power law suppression induced by the dissipative electromagnetic environment. The results can be used to improve the accuracy of hybrid devices employed in electrical metrology and for noise measurements in quantum information processing.
We study theoretically current quantization in the charge turnstile based on the superconductor-normal-metal single-electron transistor. The quantization accuracy is limited by either Andreev reflection or by Cooper-pair-electron cotunneling. The rates of these processes are calculated in the "above-the-threshold" regime when they compete directly with the lowest-order tunneling. By shaping the ac gate voltage drive it should be possible to achieve the metrological accuracy of 10;{-8}, while maintaining the quantized current on the level of 30 pA, just by one turnstile with realistic parameters using aluminum as a superconductor.
We consider the influence of the electromagnetic fluctuations on the transport properties of a hybrid single electron transistor, consisting of superconducting electrodes and a normal-metal island, when operated as a turnstile. We derive the analytic expressions for the rates near the thresholds of single electron tunneling, Andreev reflection, and Cooper-pair–electron cotunneling processes. These results show that the dissipative on-chip impedance suppresses the rates of the undesirable higher-order tunneling processes much stronger than the single electron tunneling which can therefore be utilized to increase the accuracy of such a device in quantum metrological applications.
We report an experimental observation of the backaction of a single-electron transistor (SET) measuring the Coulomb staircase of a single-electron box. As current flows through the SET, the charge state of the SET island fluctuates. These fluctuations capacitively couple to the box and cause changes in the position, width, and asymmetry of the Coulomb staircase. A sequential tunneling model accurately recreates these effects, confirming this mechanism of the backaction of a SET. This is a first step toward understanding the effects of quantum measurement on solid-state qubits.
We report an experimental observation of the backaction of a Single Electron Transistor (SET) measuring the Coulomb staircase of a single electron box. As current flows through the SET, the charge state of the SET island fluctuates. These fluctuations capacitively couple to the box and cause changes in the position, width, and asymmetry of the Coulomb staircase. A sequential tunnelling model accurately recreates these effects, confirming this mechanism of the backaction of an SET. This is a first step towards understanding the effects of quantum measurement on solid state qubits.