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Bulletin of the American Physical Society

Tunneling rates of electron pumping in the R-SINIS transistor

Vladimir Bubanja

Published Mar 3, 2014• 0 citations
OpenAlex

Abstract

We consider the influence of the electromagnetic fluctuations on the transport properties of a hybrid single electron transistor, consisting of superconducting electrodes and a normal-metal island, when operated as a turnstile. We derive the analytic expressions for the rates near the thresholds of single electron tunneling, Andreev reflection, and Cooper-pair–electron cotunneling processes. These results show that the dissipative on-chip impedance suppresses the rates of the undesirable higher-order tunneling processes much stronger than the single electron tunneling which can therefore be utilized to increase the accuracy of such a device in quantum metrological applications.

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We consider the influence of the electromagnetic fluctuations on the transport properties of a hybrid single electron transistor, consisting of superconducting electrodes and a normal-metal island, when operated as a turnstile. We derive the analytic expressions for the rates near the thresholds of single electron tunneling, Andreev reflection, and Cooper-pair–electron cotunneling processes. These results show that the dissipative on-chip impedance suppresses the rates of the undesirable higher-order tunneling processes much stronger than the single electron tunneling which can therefore be utilized to increase the accuracy of such a device in quantum metrological applications.
We study electron transport through a hybrid single-electron transistor, consisting of a superconducting island and normal-metal electrodes, in the Coulomb blockade regime. We derive analytic expressions for the elastic and inelastic cotunneling currents, which exhibit power law suppression induced by the dissipative electromagnetic environment. The results can be used to improve the accuracy of hybrid devices employed in electrical metrology and for noise measurements in quantum information processing.
We study theoretically current quantization in the charge turnstile based on the superconductor-normal-metal single-electron transistor. The quantization accuracy is limited by either Andreev reflection or by Cooper-pair-electron cotunneling. The rates of these processes are calculated in the "above-the-threshold" regime when they compete directly with the lowest-order tunneling. By shaping the ac gate voltage drive it should be possible to achieve the metrological accuracy of 10;{-8}, while maintaining the quantized current on the level of 30 pA, just by one turnstile with realistic parameters using aluminum as a superconductor.
We perform a theoretical study of nonequilibrium effects in charge transport through a hybrid single-electron transistor based on a small normal metal (N) island with the gate-controlled number of electrons, tunnel-coupled to voltage-biased superconducting (S) electrodes (SINIS). Focusing on the turnstile mode of the transistor operation with the gate voltage driven periodically, and electrons on the island being out of equilibrium, we find that the current quantization accuracy is a nonmonotonic function of the relaxation rate ${\mathrm{\ensuremath{\Gamma}}}_{\mathcal{F}}$ of the distribution function $\mathcal{F}(\ensuremath{\epsilon})$ on the island due to tunneling, as compared to the drive frequency fff, electron-electron $1/{\ensuremath{\tau}}_{ee}$, and electron-phonon $1/{\ensuremath{\tau}}_{eph}$ relaxation rates. Surprisingly, in the strongly nonequilibrium regime, $f\ensuremath{\gg}{\mathrm{\ensuremath{\Gamma}}}_{\mathcal{F}}\ensuremath{\gg}{\ensuremath{\tau}}_{ee}^{\ensuremath{-}1},{\ensuremath{\tau}}_{eph}^{\ensuremath{-}1}$, the turnstile current plateau is recovered, similarly to the ideal equilibrium regime, ${\ensuremath{\tau}}_{eph}^{\ensuremath{-}1}\ensuremath{\gg}{\mathrm{\ensuremath{\Gamma}}}_{\mathcal{F}}$. The plateau is destroyed in the quasiequilibrium regime when the electron-electron relaxation is faster than tunneling.
We consider the transport properties of a single-electron transistor consisting of a diffusive normal-metal island and superconducting electrodes. We show that the interplay of a dissipative impedance of the gate electrode, a weak magnetic field, and a charging energy of the island causes a suppression of the critical supercurrent of the transistor. When the device is voltage biased, pumping of single electrons can be achieved by a periodic modulation of the gate voltage. We derive the analytic expressions for the error rates and show that they are suppressed by the applied magnetic field.
We study the interplay between Coulomb blockade and superconductivity in a tunable superconductor-superconductor-normal-metal single-electron transistor. The device is realized by connecting the superconducting island via an oxide barrier to the normal-metal lead and with a break junction to the superconducting lead. The latter enables Cooper pair transport and (multiple) Andreev reflection. We show that these processes are relevant also far above the superconducting gap and that signatures of Coulomb blockade may reoccur at high bias while they are absent for small bias in the strong-coupling regime. Our experimental findings agree with simulations using a rate equation approach in combination with the full counting statistics of multiple Andreev reflection.