In this invited paper of the 28th International Conference of the Physics of Semiconductors (ICPS-28), we discuss the peculiar quantum electrodynamical properties of a semiconductor microcavity system, in which a cavity photon mode is strongly coupled to an intersubband transition of a doped quantum well system. In this kind of semiconductor system, it is possible to achieve an unprecedented ultrastrong coupling regime, in which the vacuum Rabi frequency is comparable to the electronic transition frequency. We discuss the anomalous quantum properties of the quantum ground state (a squeezed vacuum) and of the intersubband cavity polariton excitations. We address the role of dissipation and point out some future perspectives concerning the investigation of quantum vacuum radiation effects induced by an ultrafast time modulation of the quantum vacuum.
In this invited paper of the 28th International Conference of the Physics of Semiconductors (ICPS-28), we discuss the peculiar quantum electrodynamical properties of a semiconductor microcavity system, in which a cavity photon mode is strongly coupled to an intersubband transition of a doped quantum well system. In this kind of semiconductor system, it is possible to achieve an unprecedented ultrastrong coupling regime, in which the vacuum Rabi frequency is comparable to the electronic transition frequency. We discuss the anomalous quantum properties of the quantum ground state (a squeezed vacuum) and of the intersubband cavity polariton excitations. We address the role of dissipation and point out some future perspectives concerning the investigation of quantum vacuum radiation effects induced by an ultrafast time modulation of the quantum vacuum.
We present a full quantum theory for the dissipative dynamics of an optical cavity in the ultrastrong light-matter coupling regime, in which the vacuum Rabi frequency is a significant fraction of the active electronic transition frequency and the antiresonant terms of the light-matter coupling play an important role. In particular, our model can be applied to the case of intersubband transitions in doped semiconductor quantum wells embedded in a microcavity. The coupling of the intracavity photonic mode and of the electronic polarization to the external, frequency-dependent, dissipation baths is taken into account by means of quantum Langevin equations in the input-output formalism. In the case of a time-independent vacuum Rabi frequency, exact analytical expressions for the operators are obtained, which allows us to characterize the quantum dissipative response of the cavity to an arbitrary initial condition (vacuum, coherent field, thermal excitation). For a vacuum input in both the photonic and electronic polarization modes, the ground state of the cavity system is a two-mode squeezed vacuum state with a finite population in both photonic and electronic modes. These excitations are, however, virtual and cannot escape from the cavity: for a vacuum input, a vacuum output is found, without any trace of the intracavity squeezing. For a coherent photonic input the linear optical response spectra (reflectivity, absorption, transmission) have been studied, and signatures of the ultrastrong coupling have been identified in the asymmetric and peculiar anticrossing of the polaritonic eigenmodes. Finally, we have calculated the electroluminescence spectra in the case of an incoherent electronic input: the emission intensity in the ultrastrong coupling regime results in being significantly enhanced as compared to the case of an isolated quantum well without a surrounding cavity.
We present a full quantum theory for the dissipative dynamics of an optical cavity in the ultra-strong light-matter coupling regime, in which the vacuum Rabi frequency is comparable to the electronic transition frequency and the anti-resonant terms of the light-matter coupling play an important role. In particular, our model can be applied to the case of intersubband transitions in doped semiconductor quantum wells embedded in a microcavity. The coupling of the intracavity photonic mode and of the electronic polarization to the external, frequency-dependent, dissipation baths is taken into account by means of quantum Langevin equations in the input-output formalism. Observable spectra (reflection, absorption, transmission and electroluminescence) are calculated analytically in the case of a time-independent vacuum Rabi frequency.
We develop a general theory of the quantum vacuum radiation generated by an arbitrary time modulation of the vacuum Rabi frequency of an intersubband transition in a doped quantum well system embedded in a planar microcavity. Both nonradiative and radiative losses are included within an input-output quantum Langevin framework. The intensity and the spectral signatures of the extra-cavity emission are characterized versus the modulation properties. For realistic parameters, the photon pair emission is predicted to largely exceed the blackbody radiation in the mid and far infrared. For strong and resonant modulation a parametric oscillation regime is achievable.
Recent progress in vertical surface-emitting-laser-diode technology has raised considerable interest in cavity-QED effects in high-quality vertical semiconductor microcavities. When an excitonic transition and a single cavity mode are strongly coupled, the normal modes of the system are coupled modes split by the vacuum-Rabi frequency, corresponding in the time domain to an oscillation of the excitation between modes of exciton and photon character. Recently, the vacuum-Rabi splitting and preliminary observations of time-domain oscillation in semiconductor quantum microcavities have been reported.1,2 In this paper we investigate rigorously the time-domain vacuum-Rabi oscillation by femtosecond upconversion and pump-probe techniques.
Recently, cavity quantum electrodynamic (QED) effects in semiconductor microcavities have been of considerable interest since, in the weak-coupling regime they play an important role in selectively increasing spontaneous emission into the lasing mode of vertical-cavity surface-emitting lasers (VCSEL’s) [1,2], enabling low-threshold, high speed, and high efficiency. In a strong-coupling regime, the normal modes of the coupled system are superpositions of the exciton and cavity modes. Hence the impulsively excited system will evolve in time with the energy oscillating between the exciton and cavity modes. This is known as a vacuum-Rabi oscillation (VRO), with a frequency of Ω=d¯⋅E¯/@@h, where d¯ is the transition dipole moment of atoms and E¯ the vacuum-field strength. Of course, VRO are observable only when the cavity lifetime and exciton dephasing time are long enough compared to VRO period. Recently, Weisbuch et al. [3] have reported an observation of the normal-mode vacuum Rabi splitting in 2-D-exciton/planar-DBR microcavities. The observed splittings were as large as 6 meV in reflection and transmission spectra, implying 690-fs vacuum Rabi oscillations.
Recently, several research groups have reported investigations of vacuum-field Rabi splittings (VRS) in the linear response of strongly coupled semiconductor microcavities [1-4]. We have previously reported on the dynamics of time-domain vacuum Rabi oscillations, which are most easily understood in the framework of cavity exciton-polaritons, in which the in-plane momentum k|| is conserved [2], so that at each k|| a single cavity mode interacts with only a single mode of the electromagnetic field (Jaynes-Cummings model). In high Q semiconductor microcavities, the strong coupling between two-dimensional excitons and planar distributed- Bragg-reflector cavity modes results in several-meV splittings observable in the reflectivity or absorption spectrum. In the low excitation regime, the VRS is independent of light intensity incident on the cavity, since the vacuum-Rabi frequency exceeds the externally-driven Rabi frequency (in which case the Jaynes-Cummings model is equivalent to the linear dispersion of the coupled exciton-cavity system). As the incident light intensity is increased, two different effects may be expected to contribute to the nonlinear response. First, as long as the excitonic absorption is equivalent to a two-level system, higher-lying states of the Jaynes-Cummings ladder might be observable. Second, at high intensity phase-space filling and Coulomb screening of the exciton states results in a reduced oscillator strength which leads to a reduced VRS; this effect has no analogue in the case of atom-cavity systems. In this paper, we apply several ultrafast nonlinear techniques to investigate the nonlinear response of semiconductor microcavities.