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Physical review. B, Condensed matter

Nonlinear microwave properties of superconducting Nb microstrip resonators

M. Golosovsky, H. J. Snortland, M. R. Beasley

Published Mar 1, 1995• 103 citations
Publisher

Abstract

We present measurements of the nonlinear surface impedance ${\mathit{Z}}_{\mathit{S}}$=${\mathit{R}}_{\mathit{S}}$+${\mathit{iX}}_{\mathit{S}}$ of thin-film Nb micro- strip resonators. We demonstrate correlation between material properties of the films and the occurrence of nonlinearity. The nonlinearity is characterized using a dimensionless parameter r=\ensuremath{\Delta}${\mathit{R}}_{\mathit{S}}$(P)/\ensuremath{\Delta}${\mathit{X}}_{\mathit{S}}$(P). We make a short survey of the mechanisms of nonlinear electrodynamics of superconductors and demonstrate that our experimental results are best accounted for by the vortex penetration into the grains.

DOI
10.1103/physrevb.51.6462

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We present measurements of the nonlinear surface impedance ZS{\mathit{Z}}_{\mathit{S}}ZS​=RS{\mathit{R}}_{\mathit{S}}RS​+iXS{\mathit{iX}}_{\mathit{S}}iXS​ of thin-film Nb micro- strip resonators. We demonstrate correlation between material properties of the films and the occurrence of nonlinearity. The nonlinearity is characterized using a dimensionless parameter r=\ensuremath{\Delta}RS{\mathit{R}}_{\mathit{S}}RS​(P)/\ensuremath{\Delta}XS{\mathit{X}}_{\mathit{S}}XS​(P). We make a short survey of the mechanisms of nonlinear electrodynamics of superconductors and demonstrate that our experimental results are best accounted for by the vortex penetration into the grains.
The issue of intermodulation distortion in superconducting devices for rf and microwave applications is discussed. The classical frequency conversion theory for nonlinear two-port devices in the small signal limit is shown to apply to microstrip resonators regardless of their geometry and material. Two tone, third order intermodulation measurements allow more sensitive detection of nonlinearity compared to surface impedance measurements, provided a low noise, spurious free experimental setup is adopted. Measurements carried out on high quality Nb meanderline microstrip resonators show that at very low power level nonlinearity is dominated by intrinsic device properties. Film defects start to play a predominant role above a critical power level that strongly depends on the defect’s nature.
Abstract The performance of superconducting microwave circuits is strongly influenced by the material properties of the superconducting film and substrate. While progress has been made in understanding the importance of surface preparation and the effect of surface oxides, the complex effect of superconductor film structure on microwave losses is not yet fully understood. In this study, we investigate the microwave properties of niobium resonators with different crystalline properties and related surface topographies. We analyze a series of magnetron sputtered films in which the Nb crystal orientation and surface topography are changed by varying the substrate temperatures between room temperature and 975 K. The lowest-loss resonators that we measure have quality factors of over 10 6 at single-photon powers, among the best ever recorded using the Nb on sapphire platform. We observe the highest quality factors in films grown at an intermediate temperature regime of the growth series (550 K) where the films display both preferential ordering of the crystal domains and low surface roughness. Furthermore, we analyze the temperature-dependent behavior of our resonators to learn about how the quasiparticle density in the Nb film is affected by the niobium crystal structure and the presence of grain boundaries. Our results stress the connection between the crystal structure of superconducting films and the loss mechanisms suffered by the resonators and indicate that even a moderate change in temperature during thin film deposition can significantly affect the resulting quality factors.
The performance of superconducting microwave circuits is strongly influenced by the material properties of the superconducting film and substrate. While progress has been made in understanding the importance of surface preparation and the effect of surface oxides, the complex effect of superconductor film structure on microwave losses is not yet fully understood. In this study, we investigate the microwave properties of niobium resonators with different crystalline properties and related surface topographies. We analyze a series of magnetron sputtered films in which the Nb crystal orientation and surface topography are changed by varying the substrate temperatures between room temperature and 975K. The lowest-loss resonators that we measure have quality factors of over 106 at single-photon powers, among the best ever recorded using the Nb on sapphire platform. We observe the highest quality factors in films grown at an intermediate temperature regime of the growth series (550K) where the films display both preferential ordering of the crystal domains and low surface roughness. Furthermore, we analyze the temperature-dependent behavior of our resonators to learn about how the quasiparticle density in the Nb film is affected by the niobium crystal structure and the presence of grain boundaries. Our results stress the connection between the crystal structure of superconducting films and the loss mechanisms suffered by the resonators and indicate that even a moderate change in temperature during thin film deposition can significantly affect the resulting quality factors.
The performance of superconducting microwave circuits is strongly influenced by the material properties of the superconducting film and substrate. While progress has been made in understanding the importance of surface preparation and the effect of surface oxides, the complex effect of superconductor film structure on microwave losses is not yet fully understood. In this study, we investigate the microwave properties of niobium resonators with different crystalline properties and related surface topographies. We analyze a series of magnetron sputtered films in which the Nb crystal orientation and surface topography are changed by varying the substrate temperatures between room temperature and 975 K. The lowest-loss resonators that we measure have quality factors of over one million at single-photon powers, among the best ever recorded using the Nb on sapphire platform. We observe the highest quality factors in films grown at an intermediate temperature regime of the growth series (550 K) where the films display both preferential ordering of the crystal domains and low surface roughness. Furthermore, we analyze the temperature-dependent behavior of our resonators to learn about how the quasiparticle density in the Nb film is affected by the niobium crystal structure and the presence of grain boundaries. Our results stress the connection between the crystal structure of superconducting films and the loss mechanisms suffered by the resonators and demonstrate that even a moderate change in temperature during thin film deposition can significantly affect the resulting quality factors.
The simplest model of nonlinear response of a superconducting thin film is used for modeling the nonlinear phenomena in a superconducting transmission line and a microstrip resonator. The specified characteristic power of the transmission line is suggested to use as a fitting parameter for numerical description of the microstrip line nonlinearity at microwaves. Quantitative agreement of simulated and experimental data has been obtained for the incident power dependent transmission coefficient of a microstrip line section and a high quality microstrip resonator. Numerical results have also been obtained for the power of the third harmonic radiated from the nonlinear resonator.
We have developed a novel technique for making high quality measurements of the millimeter-wave properties of superconducting thin-film microstrip transmission lines. Our experimental technique currently covers the 75–100 GHz band. The method is based on standing wave resonances in an open ended transmission line. We obtain information on the phase velocity and loss of the microstrip. Our data for Nb/SiO/Nb lines, taken at 4.2 K and 1.6 K, can be explained by a single set of physical parameters. Our preliminary conclusion is that the loss is dominated by the SiO dielectric, with a temperature-independent loss tangent of 5.3±0.5×10−3 for our samples.