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AIP conference proceedings

The millimeter-wave properties of superconducting microstrip lines

Anastasios Vayonakis, Chiyan Luo, Henry George LeDuc, R. J. Schoelkopf, Jonas Stasys Zmuidzinas

Published Jan 1, 2002• 15 citations
Publisher

Abstract

We have developed a novel technique for making high quality measurements of the millimeter-wave properties of superconducting thin-film microstrip transmission lines. Our experimental technique currently covers the 75–100 GHz band. The method is based on standing wave resonances in an open ended transmission line. We obtain information on the phase velocity and loss of the microstrip. Our data for Nb/SiO/Nb lines, taken at 4.2 K and 1.6 K, can be explained by a single set of physical parameters. Our preliminary conclusion is that the loss is dominated by the SiO dielectric, with a temperature-independent loss tangent of 5.3±0.5×10−3 for our samples.

DOI
10.1063/1.1457704

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Nonlinearity of superconducting transmission line and microstrip resonator

Orest G. Vendik, Irina B. Vendik, T. B. Samoǐlova

The simplest model of nonlinear response of a superconducting thin film is used for modeling the nonlinear phenomena in a superconducting transmission line and a microstrip resonator. The specified characteristic power of the transmission line is suggested to use as a fitting parameter for numerical description of the microstrip line nonlinearity at microwaves. Quantitative agreement of simulated and experimental data has been obtained for the incident power dependent transmission coefficient of a microstrip line section and a high quality microstrip resonator. Numerical results have also been obtained for the power of the third harmonic radiated from the nonlinear resonator.

IEEE Transactions on Microwave Theory and Techniques•Jan 1, 1997•70 citations
We have developed a novel technique for making high quality measurements of the millimeter-wave properties of superconducting thin-film microstrip transmission lines. Our experimental technique currently covers the 75–100 GHz band. The method is based on standing wave resonances in an open ended transmission line. We obtain information on the phase velocity and loss of the microstrip. Our data for Nb/SiO/Nb lines, taken at 4.2 K and 1.6 K, can be explained by a single set of physical parameters. Our preliminary conclusion is that the loss is dominated by the SiO dielectric, with a temperature-independent loss tangent of 5.3±0.5×10−3 for our samples.
We have developed a new technique for accurate measurement of the loss of superconducting microstrips at mm‐wave frequencies. In this technique, we optically couple power to slot antenna, which is connected to one port of a hybrid coupler. One of the output ports of the hybrid delivers power to a series of mm‐wave microstrip resonators which are capacitively coupled to a feedline followed by an MKID (microwave kinetic inductance detector) that measures the transmitted power. Two other MKIDs are connected to the remaining ports of the hybrid to measure the total incident optical power and the power reflected from the mm‐wave resonators, allowing |S21|2 and |S11|2 to be accurately determined and resonance frequency fr and quality factor Q to be retrieved. We have fabricated such a Nb/SiO2/Nb microstrip loss test device which contains several mm‐ wave resonators with fr∼100 GHz and measured it at 30 mK. All the resonators have shown internal quality factor Qi∼500–2000, suggesting a loss tangent of ∼5×10−4−2×10−3 for the SiO2 in use. For comparison, we have also fabricated a 5 GHz microstrip resonator on the same chip and measured it with a network analyzer. The loss tangent at 5 GHz derived from fitting the f0 and Q data to the two‐level system (TLS) model is 6×10−4, about the same as from the mm‐wave measurement. This suggests that the loss at both microwave and mm‐wave frequencies is probably dominated by the TLS in SiO2. Our results are of direct interest to mm/submm direct detection applications which use microstrip transmission lines (such as antenna‐coupled MKIDs and transition‐edge sensors), and other applications (such as on‐chip filters). Our measurement technique is applicable up to approximately 1 THz and can be used to investigate a range of dielectrics.
Investigations into the propagation characteristics, specifically loss and wave velocity, of superconducting coplanar waveguides and microstrip lines were conducted at a 2 mm wavelength. This was achieved through the measurement of on-chip half-wavelength resonators, employing superconductor-insulator-superconductor tunnel junctions as detectors. A continuous wave millimeter wave probe signal was introduced to the chip via a silicon membrane-based orthomode transducer. This setup not only facilitated the injection of the probe signal but also provided a reference path essential for differential measurements. The observed resonance frequencies aligned closely with theoretical predictions, exhibiting a discrepancy of only several percent. However, the measured losses significantly exceeded those anticipated from quasi-particle loss mechanisms, suggesting the presence of additional loss factors. Notably, the measurement results revealed that the tangential loss attributable to the dielectric layer, specifically silicon dioxide, was approximately7±2×10−3{\text{7}\pm \text{2} \times \text{10}^{-\text{3}}}7±2×10−3. This factor emerged as the dominant contributor to overall loss at temperatures around4 K\text{4}\,{\text{K}}4K.
Transmission losses in Nb superconducting coplanar waveguide (CPW) and microstrip lines were quantified at 2-mm wavelength and 3.3 K using a network analyzer. The loss measurement utilized both half-wavelength resonators and electrically long transmission lines. Validation of the measurement was achieved using a silicon membrane-based waveguide-to-CPW transition with low return loss across a broad bandwidth. Intrinsic losses were measured within a parametric space defined by frequency, temperature, signal power, and magnetic field. The multidimensional information allowed the breakdown of overall losses into major components, including quasiparticle loss, two-level system dielectric loss, vortex flow loss, and radiation loss. The performance of these transmission lines was extrapolated into the terahertz range based on these findings.
We have measured the dispersion in phase velocity of a Nb-SiO(x)-Nb microstrip transmission line resonator over a frequency range from 50 GHz to 800 GHz. A submicron Nb/Al-AlO(x)/Nb Josephson junction was used as a voltage-controlled oscillator to excite the high order modes in the resonator. The same junction is used as a direct detector resulting in a series of step-like structures in the DC current-voltage characteristic at the position of each mode frequency. The transmission line is dispersionless up to about 500 GHz where the phase velocity begins to decrease. This is well below the gap frequency f(sub g) approx. equals 700 GHz. Results agree qualitatively with the expected theoretical behavior near f(sub g). This onset of dispersion and loss in Nb transmission lines will have a significant impact on the design of submillimeter wave RF circuits.
We present a lab-on-chip experiment to accurately measure losses of superconducting microstrip lines at microwave and sub-mm wavelengths. The microstrips are fabricated from NbTiN, which is deposited using reactive magnetron sputtering, and amorphous silicon which is deposited using plasma-enhanced chemical vapor deposition (PECVD). Sub-mm wave losses are measured using on-chip Fabry-P{é}rot resonators (FPR) operating around $350\ $GHz. Microwave losses are measured using shunted half-wave resonators with an identical geometry and fabricated on the same chip. We measure a loss tangent of the amorphous silicon at single-photon energies of tan⁡δ=3.7±0.5×10−5\tanδ=3.7\pm0.5\times10^{-5}tanδ=3.7±0.5×10−5 at $6\ $GHz and tan⁡δ=2.1±0.1×10−4\tanδ= 2.1\pm 0.1\times10^{-4}tanδ=2.1±0.1×10−4 at $350\ $GHz. These results represent very low losses for deposited dielectrics, but the sub-mm wave losses are significantly higher than the microwave losses, which cannot be understood using the standard two-level system loss model.
The simplest model of nonlinear response of a superconducting thin film is used for modeling the nonlinear phenomena in a superconducting transmission line and a microstrip resonator. The specified characteristic power of the transmission line is suggested to use as a fitting parameter for numerical description of the microstrip line nonlinearity at microwaves. Quantitative agreement of simulated and experimental data has been obtained for the incident power dependent transmission coefficient of a microstrip line section and a high quality microstrip resonator. Numerical results have also been obtained for the power of the third harmonic radiated from the nonlinear resonator.