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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Amplification of an optical pulse sequence in semiconductor optical amplifiers

Todor N. Arabadzhiev, Ivan M. Uzunov

Published Nov 6, 2003• 0 citations
Publisher

Abstract

The semiconductor optical amplifiers (SOA) are a base component in the fiber-optic transmission lines. We investigate the interaction with optical pulses of the Traveling Wave (TW) SOA having a typical parameters originated from a semi-classical model of two-level systems. An application of TW SOA as in-line amplifier for an optical pulses sequence and received "pattern" effect is shown.

DOI
10.1117/12.519080

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The semiconductor optical amplifiers (SOA) are a base component in the fiber-optic transmission lines. We investigate the interaction with optical pulses of the Traveling Wave (TW) SOA having a typical parameters originated from a semi-classical model of two-level systems. An application of TW SOA as in-line amplifier for an optical pulses sequence and received "pattern" effect is shown.
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We investigate the bistable response of a traveling-wave semiconductor optical amplifier (SOA) connected bidirectionally to a distributed feedback (DFB) laser diode. By contrast to dispersive DFB amplifiers, bistability is possible for a broad wavelength range of the injected optical signal. A theoretical analysis clarifies the origin of the phenomenon and the conditions under which it occurs. Numerical simulations and experimental results confirm the theoretical analysis. Experimentally obtained step heights up to 25 dB and widths of the bistability domain of 1-4 dB have been found
In contrast to absorbers, where the delay time via wave mixing saturates to its maximum with increasing device length due to decay of pump power along the device, in semiconductor optical amplifiers (SOAs) the delay time increases with the device length and is limited by the corresponding growth of the SOA gain, which can lead to unacceptable amplified stimulated emission in the SOA. The number of pulses which can be stored in an SOA, defined by the gain and group velocity dispersion, also is given ultimately by this SOA gain limitation, and is estimated between one and two.
Slow and fast light enables key functionality in various rf applications and all-optical networks. Semiconductor-based schemes offer electrical control of velocity at very high bandwidths in an extremely compact device. Furthermore, they operate at room temperature and can be easily integrated into various optical systems. Ultrafast nonlinear processes in semiconductor optical amplifiers (SOAs) have been used to achieve tunable slow and fast light in the terahertz bandwidth. For a 700 fs pulse, we show an electrically and optically controllable advance of 1.9 ps corresponding to an advance-bandwidth product (ABP) of 2.5. Furthermore, by leveraging self-phase modulation in these devices, we extend the performance to an ABP of 3.7. We develop comprehensive theory using a density matrix approach to explain the experimental results. Our results show that an ultrashort pulse propagating through the SOA experiences nonlinear index change due to spectral-hole burning and wave mixing between different spectral components. We derive analytical expressions for the nonlinear index induced by these ultrafast processes and numerically solve the propagation of an ultrashort pulse through the SOA. Our theoretical predictions agree very well with our experimental results. Finally, we show fast light for two ultrashort pulses separated by 7.2 ps, which demonstrates the feasibility of this scheme at high bit rates.
We present a new steady-state frequency-domain model of highly nondegenerate four-wave mixing in bulk semiconductor optical amplifiers (SOA's). The model can handle a large number of interacting optical fields and situations in which the nonlinear interactions are complex. It accounts for the longitudinal dependence of the population inversion in the SOA and the spectral dependence of the gain. Carrier population pulsations, spectral-hole burning, and carrier heating, which dominate the nonlinear response over bandwidths into the terahertz range, are included. The model also includes output amplified spontaneous emission noise and allows important system parameters such as signal-to-noise ratio and noise figure to be estimated. A number of applications of the model are presented in which good agreement between theoretical and experimental results is demonstrated.