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Nonlinear Process between Co-propagating Signal and Control Pulses in Semiconductor Optical Amplifiers

WU, Jian-Wei, BAO, Hai-Bo

Published May 1, 2008• 0 citations
OpenAlex

Abstract

A nonlinear process between co-propagating signal and control pulses has been proposed and demonstrated numerically, based on semiconductor optical amplifiers (SOA). Results show that a Gaussian signal pulse with picosecond duration can be simultaneously amplified and compressed in a SOA by utilizing a co-propagating high-intensity control pulse. To obtain high quality signal pulse with high peak power level and short pulse width, the center carrier wavelengths of two pulses should locate in the gain region of the SOA. The initial delay time between both pulses should be tuned suitably before entering the SOA.

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Abstract : Slow and fast light schemes are attractive for many applications including optical signal processing and RF phased array antennas. Semiconductor based schemes offer electrical control of velocity at very high bandwidths in an extremely compact device. Further they operate at room temperature and can be easily integrated into various optical systems. In this program, we used ultrafast nonlinearities in semiconductor optical amplifiers (SOAs) to achieve tunable time shifts at THz frequencies. In particular, we leveraged the spectral hole burning phenomena and demonstrated fast light in quantum well (QW) and quantum dot (QD) SOAs. The research included both theoretical and experimental efforts. Theoretical work was developed to understand and simulate experimental results and to optimize device designs. We introduced a novel pulse compression technique to reduce the pulse width to 100 fs to efficiently use ultra-fast nonlinearities in SOAs to achieve a large and cascadable delay. We implemented a novel chirped pulse scheme and obtained the largest advance-pulse-product of 10.7 with THz bandwidth. We demonstrated slow and fast light with GHz RF signal in QW/QD SOAs using coherent population oscillation and four-wave mixing. We also demonstrated cascaded SOAs in a loop to scale up the delay/advance.

•Oct 31, 2010•0 citations

Coherent control in quantum dot gain media using shaped pulses: a numerical study

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We present a numerical study of coherent control in a room temperature InAs/InP quantum dot (QD) semiconductor optical amplifier (SOA) using shaped ultra-short pulses. Both the gain and absorption regimes were analyzed for pulses with central wavelengths lying on either side of the inhomogeneously broadened gain spectrum. The numerical experiments predict that in the gain regime the coherent interactions between a QD SOA and a pulse can be controlled by incorporating a quadratic spectral phase (QSP) in the pulse profile. The sequential interaction with the gain medium of different spectral components of the pulse results in either suppression or enhancement of the coherent signatures on the pulse profile depending upon their proximity to the gain spectrum peak. In the absorption regime, positive QSP induces a negative chirp that adds up to that of a two photon absorption induced Kerr-like effect resulting in pulse compression while negative QSP enhances dispersive broadening of the pulse.

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Delay limit of slow light in semiconductor optical amplifiers

Alexander V. Uskov, Forrest G. Sedgwick, Connie J. Chang-Hasnain

In contrast to absorbers, where the delay time via wave mixing saturates to its maximum with increasing device length due to decay of pump power along the device, in semiconductor optical amplifiers (SOAs) the delay time increases with the device length and is limited by the corresponding growth of the SOA gain, which can lead to unacceptable amplified stimulated emission in the SOA. The number of pulses which can be stored in an SOA, defined by the gain and group velocity dispersion, also is given ultimately by this SOA gain limitation, and is estimated between one and two.

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Ultrahigh-bandwidth electrically tunable fast and slow light in semiconductor optical amplifiers [Invited]

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Slow and fast light enables key functionality in various rf applications and all-optical networks. Semiconductor-based schemes offer electrical control of velocity at very high bandwidths in an extremely compact device. Furthermore, they operate at room temperature and can be easily integrated into various optical systems. Ultrafast nonlinear processes in semiconductor optical amplifiers (SOAs) have been used to achieve tunable slow and fast light in the terahertz bandwidth. For a 700 fs pulse, we show an electrically and optically controllable advance of 1.9 ps corresponding to an advance-bandwidth product (ABP) of 2.5. Furthermore, by leveraging self-phase modulation in these devices, we extend the performance to an ABP of 3.7. We develop comprehensive theory using a density matrix approach to explain the experimental results. Our results show that an ultrashort pulse propagating through the SOA experiences nonlinear index change due to spectral-hole burning and wave mixing between different spectral components. We derive analytical expressions for the nonlinear index induced by these ultrafast processes and numerically solve the propagation of an ultrashort pulse through the SOA. Our theoretical predictions agree very well with our experimental results. Finally, we show fast light for two ultrashort pulses separated by 7.2 ps, which demonstrates the feasibility of this scheme at high bit rates.

Journal of the Optical Society of America B•Sep 16, 2008•8 citations

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Coupled carrier-photon dynamics in gain clamped semiconductor optical amplifiers: Dark pulse propagation

Peter E. Selbmann, T. Hessler, Jacco L. Pleumeekers +4 more

We have performed ultrafast cross gain modulation experiments on a gain clamped semiconductor amplifier. Time-resolved observation of the lasing mode intensity after excitation with a strong, detuned pump pulse of 150 fs duration reveals the instantaneous formation of a dark pulse that repeats itself with a period given by the cavity round- trip time. A simultaneously measured cw probe signal at gain maximum shows pronounced relaxation oscillations. The experimental results are in reasonable agreement with numerical simulations.

Ultrafast Electronics and Optoelectronics (UEO)•Jan 1, 1999•0 citations
A nonlinear process between co-propagating signal and control pulses has been proposed and demonstrated numerically, based on semiconductor optical amplifiers (SOA). Results show that a Gaussian signal pulse with picosecond duration can be simultaneously amplified and compressed in a SOA by utilizing a co-propagating high-intensity control pulse. To obtain high quality signal pulse with high peak power level and short pulse width, the center carrier wavelengths of two pulses should locate in the gain region of the SOA. The initial delay time between both pulses should be tuned suitably before entering the SOA.
Abstract : Slow and fast light schemes are attractive for many applications including optical signal processing and RF phased array antennas. Semiconductor based schemes offer electrical control of velocity at very high bandwidths in an extremely compact device. Further they operate at room temperature and can be easily integrated into various optical systems. In this program, we used ultrafast nonlinearities in semiconductor optical amplifiers (SOAs) to achieve tunable time shifts at THz frequencies. In particular, we leveraged the spectral hole burning phenomena and demonstrated fast light in quantum well (QW) and quantum dot (QD) SOAs. The research included both theoretical and experimental efforts. Theoretical work was developed to understand and simulate experimental results and to optimize device designs. We introduced a novel pulse compression technique to reduce the pulse width to 100 fs to efficiently use ultra-fast nonlinearities in SOAs to achieve a large and cascadable delay. We implemented a novel chirped pulse scheme and obtained the largest advance-pulse-product of 10.7 with THz bandwidth. We demonstrated slow and fast light with GHz RF signal in QW/QD SOAs using coherent population oscillation and four-wave mixing. We also demonstrated cascaded SOAs in a loop to scale up the delay/advance.
We present a numerical study of coherent control in a room temperature InAs/InP quantum dot (QD) semiconductor optical amplifier (SOA) using shaped ultra-short pulses. Both the gain and absorption regimes were analyzed for pulses with central wavelengths lying on either side of the inhomogeneously broadened gain spectrum. The numerical experiments predict that in the gain regime the coherent interactions between a QD SOA and a pulse can be controlled by incorporating a quadratic spectral phase (QSP) in the pulse profile. The sequential interaction with the gain medium of different spectral components of the pulse results in either suppression or enhancement of the coherent signatures on the pulse profile depending upon their proximity to the gain spectrum peak. In the absorption regime, positive QSP induces a negative chirp that adds up to that of a two photon absorption induced Kerr-like effect resulting in pulse compression while negative QSP enhances dispersive broadening of the pulse.
In contrast to absorbers, where the delay time via wave mixing saturates to its maximum with increasing device length due to decay of pump power along the device, in semiconductor optical amplifiers (SOAs) the delay time increases with the device length and is limited by the corresponding growth of the SOA gain, which can lead to unacceptable amplified stimulated emission in the SOA. The number of pulses which can be stored in an SOA, defined by the gain and group velocity dispersion, also is given ultimately by this SOA gain limitation, and is estimated between one and two.
Slow and fast light enables key functionality in various rf applications and all-optical networks. Semiconductor-based schemes offer electrical control of velocity at very high bandwidths in an extremely compact device. Furthermore, they operate at room temperature and can be easily integrated into various optical systems. Ultrafast nonlinear processes in semiconductor optical amplifiers (SOAs) have been used to achieve tunable slow and fast light in the terahertz bandwidth. For a 700 fs pulse, we show an electrically and optically controllable advance of 1.9 ps corresponding to an advance-bandwidth product (ABP) of 2.5. Furthermore, by leveraging self-phase modulation in these devices, we extend the performance to an ABP of 3.7. We develop comprehensive theory using a density matrix approach to explain the experimental results. Our results show that an ultrashort pulse propagating through the SOA experiences nonlinear index change due to spectral-hole burning and wave mixing between different spectral components. We derive analytical expressions for the nonlinear index induced by these ultrafast processes and numerically solve the propagation of an ultrashort pulse through the SOA. Our theoretical predictions agree very well with our experimental results. Finally, we show fast light for two ultrashort pulses separated by 7.2 ps, which demonstrates the feasibility of this scheme at high bit rates.
We have performed ultrafast cross gain modulation experiments on a gain clamped semiconductor amplifier. Time-resolved observation of the lasing mode intensity after excitation with a strong, detuned pump pulse of 150 fs duration reveals the instantaneous formation of a dark pulse that repeats itself with a period given by the cavity round- trip time. A simultaneously measured cw probe signal at gain maximum shows pronounced relaxation oscillations. The experimental results are in reasonable agreement with numerical simulations.