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Optics Express

Room temperature slow light in a quantum-well waveguide via coherent population oscillation

Phedon Palinginis, Forrest G. Sedgwick, Shanna Crankshaw, Michael Moewe, Connie J. Chang-Hasnain

Published Jan 1, 2005• 108 citations
Publisher

Abstract

We report room temperature demonstration of slow light propagation via coherent population oscillation (CPO) in a GaAs quantum well waveguide. Measurements of the group delay of an amplitude modulated signal resonant with the heavy-hole exciton transition reveal delays as long as 830 ps. The measured bandwidth, which approaches 100 MHz, is related to the lifetime of the photoexcited electron-hole (e-h) plasma as expected for CPO process.

DOI
10.1364/opex.13.009909

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We report room temperature demonstration of slow light propagation via coherent population oscillation (CPO) in a GaAs quantum well waveguide. Measurements of the group delay of an amplitude modulated signal resonant with the heavy-hole exciton transition reveal delays as long as 830 ps. The measured bandwidth, which approaches 100 MHz, is related to the lifetime of the photoexcited electron-hole (e-h) plasma as expected for CPO process.
We demonstrate room-temperature slow light that is electrically and optically controllable by using a quantum-dot (QD) semiconductor optical amplifier (SOA) at zero and low bias below the transparency current. The absorption spectrum of the QD SOA exhibits a spectral dip with a corresponding group-index dispersion and group delay owing to coherent population oscillation caused by the interaction of pump and probe laser light near resonance of the first heavy-hole-conduction-state transition. At an optical pump power of approximately 0.3 mW inside the single-mode waveguide without current injection, a group-index change of 3.0 with a bandwidth of 2 GHz was measured. This group-index change can be controlled by injection of electrical current and by changing the optical pump power.
We experimentally demonstrate slow-down of light by a factor of three in a 100 microm long semiconductor waveguide at room temperature and at a record-high frequency of 16.7 GHz. It is shown that the group velocity can be controlled all-optically as well as through an applied bias voltage. A semi-analytical model based on the effect of coherent population oscillations and taking into account propagation effects is derived and is shown to well account for the experimental results. It is shown that the carrier lifetime limits the maximum achievable delay. Based on the general model we analyze fundamental limitations in the application of light slowdown due to coherent population oscillations.
Coherent population oscillation (CPO) is a successful method used to implement semiconductorbased slow light using the coherent pump-probe effect. The first demonstration was carried out in semiconductormultiple quantumwells (MQWs) [1-3] soon after the experimental demonstration of slow light in ruby crystal [4,5]. Later, slow light based on CPO in semiconductor QWs and quantum dots (QDs)was also successfully demonstrated at room temperature [6-10], and the slow-light regime was soon extended to the corresponding fast-light regime in semiconductor gainmedia [11-17] using a semiconductor optical amplifier (SOA) alone or combined with an electroabsorbtion (EA) section. The basicworking principle of slow light based onmost pump-probe schemes is to decrease the group velocity vg using the sharp variation of the refractive index ∂n′/∂ω within a narrow frequency range: vg = c ng = c n′ + ω ∂n′ , (2.1) where ng = n′ + ω∂n′/∂ω is the group index n′ is the real part of the refractive index n For the CPO case, the required sharp variation of the refractive index originates from the population oscillation induced by the pump and probe signals applied to a two-level system, as indicated in Figure 2.1. The induced population oscillation generates a new polarization component and changes the susceptibility and thus the refractive index experienced by the signal. In semiconductor quantum structures, this two-level system can be the heavy-hole (HH) exciton [1-3,6,18] of QWs and QDs, or the valence and conductionground states of QDs [18,19]. In principle, as long as the optical transition between the two states is dipole-allowed, the slow light based on CPO can be implemented.
Experimental demonstration and theoretical analysis of slow light in a semiconductor waveguide at GHz frequencies slow-down of light by a factor of two in a semiconductor waveguide at room temperature with a bandwidth of 16.7 GHz using the effect of coherent pulsations of the carrier density. The achievable delay is shown to be limited by the short lifetime. The maximum time delay observed reflects an approximately two-fold increase of the group refractive index, corresponding to a time delay of approximately 20 % of the carrier (population) lifetime. The experimental observations are well-explained by a model accounting for the absorption saturation in the waveguide, when using a lifetime that depends on the reverse bias.
We report tunable slow light (slowlight) in the 1.3 µm region in quantum dots (QDs) observed at room temperature. The light transmission times are measured by the counter-propagating pump-and-probe method in waveguides with InAs QDs as active regions. The maximum slowdown factor is 2.5 for a 500-µm-long sample. This corresponds to a 2.5 times longer propagation time in the waveguide. The slowdown can be well controlled by tuning the pump beam. This pump power dependence of the slowdown factor agrees well with theoretical predictions obtained by coherent population oscillation (CPO). We also report a method that realizes larger slow light effects.