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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Three-level optical Stark effect in semiconductors

Dietmar H. Froehlich, Christian Neumann, Bruno Uebbing, Robert Wille

Published May 1, 1990• 0 citations
Publisher

Abstract

The three-level optical Stark effect is due to a dynamical coupling of two excited states by an intense laser field. This effect has been observed on the heavy and light hole excitons in multiple quantum wells (MQW) and the dipole allowed 2 P exciton in Cu20. In this contribution new results on the dipole forbidden but quadrupole allowed 1 S exciton in Cu20 are reported. The experimental results are analyzed in terms of a nonlinear susceptibility which takes into account the dynamical coupling between the excited states to all orders.

DOI
10.1117/12.18123

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The three-level optical Stark effect is due to a dynamical coupling of two excited states by an intense laser field. This effect has been observed on the heavy and light hole excitons in multiple quantum wells (MQW) and the dipole allowed 2 P exciton in Cu20. In this contribution new results on the dipole forbidden but quadrupole allowed 1 S exciton in Cu20 are reported. The experimental results are analyzed in terms of a nonlinear susceptibility which takes into account the dynamical coupling between the excited states to all orders.
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A theoretical study of the coherently coupled heavy-hole--light-hole optical Stark effect in semiconductor quantum wells is presented. Based on a detailed investigation of the various many-body contributions to the Stark shifts, we identify a parameter regime in which the existence of intervalence band coherences (analogous to the nonradiative Raman coherence in three-level atoms) can be inferred from the coherently coupled heavy-hole--light-hole excitonic optical Stark shift. The analysis is performed for the third-order nonlinear optical regime $({\ensuremath{\chi}}^{3}$ regime), and is based on the dynamics-controlled truncation (DCT) formalism. It includes the relevant optical selection rules, excitonic and two-exciton-correlation (e.g., biexcitonic) effects.
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Summary form only given. Since the original discovery of the excitonic optical Stark effect, substantial progress has been made in the understanding of this ultrafast nonlinear optical effect. Recently, a red shift of the excitonic absorption line has been reported using low intensity excitation detuned 4.5 meV below the 1s-heavy-hole (hh) resonance and cross-circularly-polarized pulses. This was attributed to higher-order Coulomb correlations, interpretable as bound and unbound two-exciton states and memory effects. For co-circularly polarized pulses the well-known blue shift was found. Here we present a related effect occurring in the higher-intensity regime. Standard pump-probe experiments were performed on high-quality 8.5 nm-thick In/sub 0.04/Ga/sub 0.96/As multiple quantum well (MQW) samples.
We report the experimental observation of coherently coupled heavy-hole-light-hole Stark shifts, i.e., light-hole exciton shifts under heavy-hole exciton pumping conditions, in InGaAs quantum wells. The theoretical analysis of the data is based on a full many-body approach (dynamics-controlled truncation formalism) in the third-order nonlinear optical regime. It is shown that the Stark shift data can be interpreted as strong evidence of suitably defined nonradiative intervalence band coherences in a semiconductor quantum well. Hence, the observations establish a semiconductor analog of Raman coherences in three-level atoms.