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IEEE International Symposium on Intelligent Signal Processing,

Novel nitride - based materials for nonlinear optical signal processing applications at 1.5 μm

Sirona Valdueza‐Felip, F. B. Naranjo, Miguel González‐Herráez, H. Fernández, Javier Solis, S. Fernández, F. Guillot, Eva Monroy, J. Grandal, Miguel Angel Sanchez-Garcia

Published Oct 1, 2007• 0 citations
Publisher

Abstract

We characterize the third order nonlinear optical response of the interband transition of bulk InN and the intraband transition of GaN/AIN quantum dots, both of them in the spectral region around 1.5 mufrac14m. The results show that these materials can be very suitable for optical signal processing applications in the spectral region of wavelength-division multiplexed (WDM) transmission. Considering the temporal behavior of the nonlinear response, InN seems particularly useful in all-optical control of light speed (slow-light generation), whereas GaN/AIN quantum dots are promising for switching and wavelength conversion applications.

DOI
10.1109/wisp.2007.4447511

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We characterize the third order nonlinear optical response of the interband transition of bulk InN and the intraband transition of GaN/AIN quantum dots, both of them in the spectral region around 1.5 mufrac14m. The results show that these materials can be very suitable for optical signal processing applications in the spectral region of wavelength-division multiplexed (WDM) transmission. Considering the temporal behavior of the nonlinear response, InN seems particularly useful in all-optical control of light speed (slow-light generation), whereas GaN/AIN quantum dots are promising for switching and wavelength conversion applications.
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There is a great interest in nonlinear optical phenomena in multiple quantum well (MQW) structure. However, the investigation has been focused on either interband or intraband transition. If the interband and intraband transitions are utilized simultaneously, new application fields such as light-controlled optical modulation can be expected. (Fig.1) In this paper, we investigate theoretically the nonlinear optical absorption of interband-resonant light in n-doped MQW structure, which is caused by the simultaneous incidence of intraband-resonant light. Here we use the transition from bound to extended states as the intraband transition.
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