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Digest on Nonlinear Optics: Materials, Phenomena and Devices

Nonlinear Optical Absorption Caused By Interaction Between Interband - And Intraband-resonant Lights In Multiple Quantum Well Structure

Susumu Noda, Tetsuya Uemura, A. Sasaki

Published Jan 1, 1990• 0 citations
Publisher

Abstract

There is a great interest in nonlinear optical phenomena in multiple quantum well (MQW) structure. However, the investigation has been focused on either interband or intraband transition. If the interband and intraband transitions are utilized simultaneously, new application fields such as light-controlled optical modulation can be expected. (Fig.1) In this paper, we investigate theoretically the nonlinear optical absorption of interband-resonant light in n-doped MQW structure, which is caused by the simultaneous incidence of intraband-resonant light. Here we use the transition from bound to extended states as the intraband transition.

DOI
10.1109/nlo.1990.695872

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There is a great interest in nonlinear optical phenomena in multiple quantum well (MQW) structure. However, the investigation has been focused on either interband or intraband transition. If the interband and intraband transitions are utilized simultaneously, new application fields such as light-controlled optical modulation can be expected. (Fig.1) In this paper, we investigate theoretically the nonlinear optical absorption of interband-resonant light in n-doped MQW structure, which is caused by the simultaneous incidence of intraband-resonant light. Here we use the transition from bound to extended states as the intraband transition.
The authors describe a theoretical analysis on interband-resonant light modulation by intersubband-resonant light in the n-doped quantum well. The modulation principle is briefly explained. The theoretical formulation for the modulation is derived by using density matrix theory. The modulation characteristics concerning the absorption coefficient and refractive index are calculated for various parameters. It is shown that the absorption coefficient for the interband-resonant light can be greatly changed by the incidence of intersubband-resonant light.>
We present a theoretical formalism, based on the transfer-matrix method and the so-called sheet model, describing light propagation in multiple-quantum-well (MQW) structures in the range of the saturated intersubband absorption. A commonly used total internal reflection geometry is considered. Intensity of the reflected light as a function of the input intensity is calculated for two-level $\mathrm{GaAs}/{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ MQW. Numerical simulations show that the optical nonlinearity of the structures can be greatly modified by optical interference effects. In the case of sufficiently thick structures and grazing angle of incidence the multiple reflections inside the MQW can lead even to bistability.
We analyze the optical modulation of an interband resonant light pulse by intersubband resonant light pulses in a three-level quantum well system. The origin of the third order self-saturation optical nonlinearity resulting in the modification of the interband light absorption is assumed to lie in the carrier density modulation induced by the interband and intersubband transitions. The optical nonlinearity can be optimized to achieve the maximum modulation by applying control light pulses shorter than the intersubband energy relaxation time but longer than the intersubband phase relaxation time. We have also experimentally investigated the material system suitable for optical communication regime and have observed that the In0.53Ga0.47As/AlAs0.56Sb0.44 quantum well lattice matched to InP yielding an intersubband transition as short as 1.4 μm is the most suitable system for the proposed modulation scheme.
We discuss, theoretically, employing formalism based on the transfer matrix method and the so-called sheet model, the linear and nonlinear (saturated) optical phase shifts associated with intersubband transitions in multiple quantum well (MQW) structures. A commonly used total internal reflection geometry is considered. Numerical simulations are performed for two-level GaAs∕AlxGa1−xAs MQWs. They show that the above-mentioned phase shift can be greatly modified by optical interference effects and radiative coupling between QWs particularly at the grazing angle of incidence. For the restricted range of parameters even the bistable behavior of the nonlinear phase shift and reflectivity are possible.
An efficient modulation scheme at relatively lower control light intensities is proposed using ultrashort interband and intersubband-resonant coupling light pulses in a novel asymmetric In x Ga1-x As/AlAs semiconductor quantum well structure. The shape of the intersubband-control light pulses can manipulate the interband-signal light pulse absorption. The carrier relaxation rate of the quantum well system can be estimated from the interband nonlinear optical parameters induced by the intersubband control light field. The modulation efficiency in the proposed structure is twice than in a conventional symmetric quantum well structure. This reduces the threshold optical energy below 1 pJ in a 100-µm2 waveguide structure on using 500 fs control light pulses owing to the enhanced optical nonlinearities in the proposed structure.