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Heterodyne Detection with Superconducting Tunnel Diodes

Michael J. Wengler

Published Jan 1, 1988• 2 citations
Publisher

Abstract

Heterodyne receivers based on superconductor-insulator-superconductor (SIS) tunnel diodes are the most sensitive available for near-millimeter wavelengths. Since the late seventies, receivers based on SISs have been used for millimeter band observations at radio observatories around the world. The work described here was carried out with the elusive goal in mind of developing ideal SIS receivers for radioastronomy. This thesis describes one researcher's path towards this goal. In the first chapter, a basic description of SIS diodes, their interaction with radiation, and heterodyne detection are given. The important detailed results of J. R. Tucker's tunnel diode heterodyne theory are described, since subsequent chapters rely on Tucker's work quite heavily. Throughout this introductory chapter, extremely simple (by comparison with the algebraic theoretical results) physical models are used to describe superconductivity, SISs, photon-assisted tunneling, and heterodyne detection. It is the author's experience that these physical models can be used to derive correct theoretical results, long before these results are proved rigorously. The second chapter presents a fully quantum mechanical theory of heterodyne detection with diodes. This theory was developed because Tucker's theory for tunnel diodes predicts a greater mixer sensitivity than is possible considering Heisenberg's uncertainty principle for radiation. Tucker does not quantize the radiation incident on the SIS, although his treatment of the isolated tunnel diode is completely quantum mechanical. In chapter 2, the quantization of radiation is carried out for heterodyne diode detectors. The formalism is shown to obey quantum limits on sensitivity. Finally, an ideal SIS mixer is shown to have noise properties identical to those of optical mixers based on ideal photodiodes. In possession of an apparently complete theory for SIS mixers, the third chapter presents a sampling of numerical results from that theory. Four different non-ideal tunnel diodes are used for these calculations so that a quantitative feel for the importance of diode quality can be achieved. The effects of dc and LO bias, signal and image source admittance, frequency of operation, and junction quality are all explored. This information will be useful for the proper engineering of SIS mixers. Finally, the fully optimized performance of the four tunnel diodes is presented as frequency is varied. It is shown that reasonably good quality lead-alloy SISs should behave like photodiodes up to frequencies as high as 1500 GHz. Finally, chapter 4 presents a prototype open-structure SIS mixer. Measurements in the laboratory show this mixer to be quite sensitive for signal frequencies from 115 to 761 GHz. Unlike all other SIS receivers, in which the diode is mounted across a waveguide, this mixer relies on the bowtie-on-quartz antenna structure, which has been investigated by D. B. Rutledge and his students. This difference is essential to the multi-octave spectral coverage of this mixer. It is probable that waveguide designs will never achieve good results above 500 GHz, and as of now, there are no SIS-waveguide mixers which operate well above 300 GHz. Tests at the Owens Valley Radio Observatory verify the suitablility of this mixer for radioastronomy, but these tests have been limited to frequencies of 260 GHz and lower.

DOI
10.7907/tyqq-rz71.

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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Nov 29, 2007•3 citations
Heterodyne receivers based on superconductor-insulator-superconductor (SIS) tunnel diodes are the most sensitive available for near-millimeter wavelengths. Since the late seventies, receivers based on SISs have been used for millimeter band observations at radio observatories around the world. The work described here was carried out with the elusive goal in mind of developing ideal SIS receivers for radioastronomy. This thesis describes one researcher's path towards this goal. In the first chapter, a basic description of SIS diodes, their interaction with radiation, and heterodyne detection are given. The important detailed results of J. R. Tucker's tunnel diode heterodyne theory are described, since subsequent chapters rely on Tucker's work quite heavily. Throughout this introductory chapter, extremely simple (by comparison with the algebraic theoretical results) physical models are used to describe superconductivity, SISs, photon-assisted tunneling, and heterodyne detection. It is the author's experience that these physical models can be used to derive correct theoretical results, long before these results are proved rigorously. The second chapter presents a fully quantum mechanical theory of heterodyne detection with diodes. This theory was developed because Tucker's theory for tunnel diodes predicts a greater mixer sensitivity than is possible considering Heisenberg's uncertainty principle for radiation. Tucker does not quantize the radiation incident on the SIS, although his treatment of the isolated tunnel diode is completely quantum mechanical. In chapter 2, the quantization of radiation is carried out for heterodyne diode detectors. The formalism is shown to obey quantum limits on sensitivity. Finally, an ideal SIS mixer is shown to have noise properties identical to those of optical mixers based on ideal photodiodes. In possession of an apparently complete theory for SIS mixers, the third chapter presents a sampling of numerical results from that theory. Four different non-ideal tunnel diodes are used for these calculations so that a quantitative feel for the importance of diode quality can be achieved. The effects of dc and LO bias, signal and image source admittance, frequency of operation, and junction quality are all explored. This information will be useful for the proper engineering of SIS mixers. Finally, the fully optimized performance of the four tunnel diodes is presented as frequency is varied. It is shown that reasonably good quality lead-alloy SISs should behave like photodiodes up to frequencies as high as 1500 GHz. Finally, chapter 4 presents a prototype open-structure SIS mixer. Measurements in the laboratory show this mixer to be quite sensitive for signal frequencies from 115 to 761 GHz. Unlike all other SIS receivers, in which the diode is mounted across a waveguide, this mixer relies on the bowtie-on-quartz antenna structure, which has been investigated by D. B. Rutledge and his students. This difference is essential to the multi-octave spectral coverage of this mixer. It is probable that waveguide designs will never achieve good results above 500 GHz, and as of now, there are no SIS-waveguide mixers which operate well above 300 GHz. Tests at the Owens Valley Radio Observatory verify the suitablility of this mixer for radioastronomy, but these tests have been limited to frequencies of 260 GHz and lower.
This thesis describes the development and testing of NbN/MgO/NbN tunnel junctions for use as superconductor-insulator-superconductor (SIS) mixers. SIS mixers are the most sensitive heterodyne detectors in the millimeter wavelength region. Most SIS mixers use Pb alloy tunnel junction. These tunnel junctions have several problems associated with the soft nature of Pb and its low superconducting transition temperature. NbN-based tunnel junctions are being developed to overcome these difficulties. These devices are intended to be used as mixers at millimeter and submillimeter wavelengths. This thesis describes the fabrication process involved in making NbN junctions, and the results of measurements on these devices. The purpose of these measurements is to determine the future possibilities of NbN tunnel junctions as high-frequency mixers. The first chapter is an introduction to SIS mixers and explains how tunnel junction properties affect mixer performance. The basic theory of tunneling and mixing in SIS mixers is first presented. A description of quantum mixer theory is included in this presentation. This theory makes several interesting predictions that cannot be explained using classical theories. This is followed by a description of how real SIS tunnel junctions differ from ideal junctions. The physical origin of these differences is discussed, along with how they affect SIS mixer performance. Finally, the advantages and disadvantages of the various superconducting materials available are discussed. The decision to develop NbN devices is based on these material properties. The second chapter describes the methods used to fabricate small-area NbN/MgO/NbN tunnel junctions. The chapter begins with a description of the various methods that have been used to deposit NbN films. Reactive magnetron sputtering is chosen as the best method for tunnel junction fabrication. Details on the vacuum systems and the methods used for depositing superconducting NbN are discussed. Next, the process used for depositing junction trilayers (NbN/MgO/NbN) is described. The probable growth mode of MgO on NbN is presented. The importance of this growth mode to the junction quality is explained in some detail. Next, standard junction processing steps are reported. The details and limitations of each step are put forth. The standard process allows for the fabrication of 1 [square micron] tunnel junctions. Finally, this chapter discusses several methods of fabaricating submicron junctions that are being pursued. The status of this work is given. The third chapter describes the characterization of NbN films and NbN/Mg0/NbN tunnel junctions. Film properties are described first. The correlation of these properties to deposition conditions is discussed in some detail. Next, values for the various features of the I-V characteristic are given; typical and exceptional values are noted. How these features limit mixer results is described in detail. Several important device attributes were measured using superconducting-quantum-interference-devices (SQUIDs). These attributes are the junction's specific capacitance and the film's magnetic penetration depth. The theory and results of measuring specific capacitance and penetration depth are presented. Following the SQUID results is a large section on RP testing. Mixer tests were made at 205 GHz. The receiver design used, integral inductive tuning circuit used and results are discussed. These results are well understood, with the exception of the temperature dependence of the mixer performance. Finally, measurements of the uniformity of many junctions on a single wafer are presented. The importance of junction uniformity is also described. The final chapter discusses the ultimate limits on NbN mixers, and tells what future work must be done to achieve these limits. The primary high-frequency limit on NbN junctions is the capacitance of NbN/MgO/NbN junctions. The limit imposed by the junction capacitance and circuits used to tune out this capacitance are discussed. Also, the low-frequency limits on NbN junctions are discussed. The status of submicron devices is presented. Junction area is the most immediate limitation on NbN mixer results. The possibility of using other barrier materials to increase the RC speed of NbN junctions is presented. Finally, the possibility of operating NbN junctions at temperatures above 4.2 K is discussed.
The development of ultra-low-noise receivers at frequencies of >200 GHz is primarily driven by astronomical applications. The most sensitive millimeter-wave receivers that have presently been constructed make use of the strong mixing afforded by superconductor-insulator-superconductor (SIS) tunnel junctions. In a collaborative project between UKC and RAL, a 230 GHz laboratory receiver has been built using a lead alloy SIS junction as the mixing element, mounted in 4:1 reduced-height waveguide, terminated at one end with a circular cross-section, adjustable backshort. Best results indicate a double-sideband receiver noise temperature of T/sub R/(DSB) approximately=120 K, which represents state-of-the-art performance at this frequency. Initial difficulties in achieving good mixing performance prompted an investigation into the importance of the 'quality' of mixer block backshort tuning elements. An analysis of the mixer equivalent circuit is presented which allows for loss in a non-ideal mixer block, and 3-port mixer model calculations are discussed which incorporate this analysis into the Tucker quantum theory of mixing.
Photon-assisted tunneling of electrons through an insulating barrier may be used to detect long-wavelength radiation with a sensitivity approaching the limit imposed by the Heisenberg uncertainty principle. A new generation of ultra-low-noise millimeter-wave receivers, currently being developed for astronomical observation, utilizes the extremely sharp nonlinearity produced by single-electron quasiparticle tunneling between two superconductors in a superconductor-insulator-superconductor (SIS) tunnel junction. At millimeter wavelengths, the quantum energy $\frac{\ensuremath{\hbar}\ensuremath{\omega}}{e}$ may be larger than the voltage width for onset of quasiparticle tunneling in a SIS junction; and under these conditions the absorption of a single photon can cause one additional electron to tunnel through the barrier. Several newly discovered quantum effects become possible in this regime, including power amplification of an incoming signal during the process of frequency down-conversion in a heterodyne receiver. The experimental development of SIS millimeter-wave receivers is reviewed, along with the quantum theory of mixing which predicts their performance.
This text describes in some detail the design and operational history of an instrument used as the front-end receiver for a fast, broadband, high-resolution spectrometer for the 1.3 millimeter wavelength atmospheric window. Using only a single superconductor-insulator-superconductor (SIS) tunnel junction as its heterodyne detector, the receiver’s novel design achieved then unprecedented RF and IF bandwidths and incorporated several innovations which have since been widely adopted within the millimeter and submillimeter wave research communities. Although intended as a relatively simple technology demonstrator and starting point for more refined and sophisticated designs, the receiver turned out to be a useful astronomical instrument in its own right, and it was deployed as a de facto facility instrument for several years at the Caltech Submillimeter Observatory. Also described are the author’s contributions to another important aid to research and design efforts: the SuperMix software library for the analysis and optimization of high-frequency circuitry, especially developed to aid in the design of systems involving SIS and other superconducting elements. Finally, the text may serve as a useful introduction to the theory behind and methodology for modeling and design of SIS heterodyne mixers.
This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits. To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency. A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/kb to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.