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Quantum Electronics

Mechanism of lasing at the 5s2 2D5/2— 5p2P3/2transition in Cd II at anomalously low temperatures of the active medium

A. V. Karelin

Published Apr 30, 2003• 1 citation
Publisher

Abstract

The mechanism of lasing at the Cd II atomic ion transition at 441.6 nm at near-threshold temperatures, when the contribution from the sputtering of a pure metallic cadmium film by charged products of nuclear reaction cannot be neglected, is discussed. A comparison of the theoretical and experimental data leads to a value 10.8 atoms per event for the total average yield of sputtering of cadmium by the products of nuclear reaction 3 He(n, p) 3 T.

DOI
10.1070/qe2003v033n04abeh002409

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Using the resonance 2s-2p excitation of the Li atom in a lithium-cadmium vapour mixture we observed cadmium atoms excited to very high energy levels such as 6s 3 S 1 , 5d 3 D J and 6p 1 P 1 . As the main excitation process we propose radiative collisions between excited lithium and ground state cadmium atoms followed by an energy-pooling collision between Cd( 3 P J ) atoms. The temporal evolution of intensities of selected lithium and cadmium atomic lines is simulated using a system of rate equations. We estimated the rate coefficient for the radiative collision Li(2p) + Cd(5 1 S 0 ) + h ν 670.8 nm + Δ E →Li(2s) + Cd(5 3 P 0 ), to be 6×10 -10 cm 3 s -1 at T = 965 K.
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Using resonance excitation of the lithium 2p atomic level in a lithium-cadmium vapor mixture we observed cadmium atomic transitions from very high levels. Time dependent fluorescence intensity from various lithium and cadmium atomic levels is measured. Solving a system of 11 rate equations simulates the time evolutions of corresponding atom densities in the lithium and cadmium atomic energy levels. From the best fit we estimate rate coefficient for radiative collision Li(2p)+Cd(51S0)+hν670.8 forming Li(2s)+Cd(53P0).