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Soviet Journal of Quantum Electronics

Four-level logic element based on optical bistabiiity in an uncooled thin-film semiconductor interferometer

A A Bakiev, A. L. Velikovich, G. P. Golubev, D. G. Luchinskiǐ

Published Sep 30, 1987• 1 citation
Publisher

Abstract

An experimental investigation was made of an optical bistabiiity of layer e-GaSe single crystals of thickness 0.9 µ in optical contact with a dielectric mirror. Excitation with argon laser radiation (λ = 514.5 nm, focal spot diameter 60 µ, excitation power up to 80 mW) under static and dynamic conditions induced up to three consecutive optical hysteresis loops demonstrating the feasibility of operation of a thin-film bistable element as a four-level logic device.

DOI
10.1070/qe1987v017n09abeh009885

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An experimental investigation was made of an optical bistabiiity of layer e-GaSe single crystals of thickness 0.9 µ in optical contact with a dielectric mirror. Excitation with argon laser radiation (λ = 514.5 nm, focal spot diameter 60 µ, excitation power up to 80 mW) under static and dynamic conditions induced up to three consecutive optical hysteresis loops demonstrating the feasibility of operation of a thin-film bistable element as a four-level logic device.
An experimental investigation was made of the transformation of the intensity profile of a spatially confined light beam transmitted by optical bistable devices based on thin-film semiconductor interferometers formed by vacuum evaporation. A hysteresis of the intensity profile and switching waves was observed: these waves represented the process of consecutive transition from one stable state to another in neighboring zones of the interferometer. An experimental investigation was made of the velocity of switching waves in thin-film interferometers and in a model interferometer with a thermal nonlinearity.
We report the realisation of optically bistable switching and memory elements, and the transphasor Can all-optical transistor) in simple one element nonlinear Fabry-Perot interferometers made from the semiconductor InSb. These devices, which operate at 5 K and 77 K with mW powers from a cw CO laser between 5 and 6 μm rely on a strongly intensity-dependent refractive index discovered near the bandgap region of InSb and explained by bandgap resonant saturation. Switching speeds are shown to be < 500 ns in these first devices and operation to much shorter timescales is predicted. Operation at room temperature and in other semiconductors at other wavelengths remains a possibility and such devices offer considerable potential for all-optical switching in integrated optics and laser pulse control.