Nonlinear Optics

A Critical Phenomenon-Based Optical Bistability in Vanadium Dioxide

R. S. Rana, David D. Nolte, F. A. Chudnovskiǐ

Published Jan 1, 1992• 0 citations

Abstract

The characteristics of nonlinear thin film etalons and interference filters are being studied because of their potential use as optical logical elements1. Low-power optical bistability in thin film nonlinear interference filters has been demonstrated at room temperature using zinc sulphide (ZnS) and zinc selenide2 (ZnSe). These bistable devices rely on electronic nonlinearities to operate. A switching power of 5 mW and switching speeds of 1 ms - 10 μs are typical for these devices.

DOI: 10.1364/nlo.1992.md5

Related papers

Room-Temperature Thermal Optical Bistability in Thin-Film Interference Filters and Dye-Filled Etalons

Michael C. Rushford, Doreen A. Weinberger, H. M. Gibbs +2 more

Passive optical bistability in semiconductors was first seen in an interference filter with an intermediate layer of ZnS one-wavelength thick, and implied switch-on time of 200 μs.1 Thin-film interference filters may be potential practical bistable devices due to their room-temperature operation, extreme thinness, ease of production, and low-power operation.

Topical Meeting on Optical Bistability (OB)Jan 1, 19831 citation

OPTICAL BISTABILITY IN ZINC-SULFIDE AND ZINC-SELENIDE THIN-FILM INTERFERENCE FILTERS AND IN GALLIUM-ARSENIDE AND COPPER-CHLORIDE ETALONS (NONLINEAR).

Doreen A. Weinberger

Two-photon optical bistability in commercial thin-film interference filters with ZnS and ZnSe spacers is observed with switching times ≳ 200 μs. The accompanying drifting of the bistability loop in time and laser-induced "damage" indicate a thermal mechanism. The problem of water vapor absorption in such filters must be addressed before the inherent potential and advantages of these devices in two-dimensional image processing applications can be realized. Trans- verse effects in GaAs superlattice etalons are observed which cannot be explained on the basis of a plane-wave analysis. The optical nonlinearity in GaAs and diffraction combine to produce drastic effects on the measured beam profiles and bistable loops, due to an intensity-dependent virtual focus. Lastly, the first observation of optical bistability due to a biexcitonic nonlinearity in CuCl etalons is reported with detector-limited switching times of 600 ps. In addition, lasing action along the pump axis in a cavity defined by the end mirrors is observed in a very thin (2.0 μm) CuCl etalon. The lasing transition is unique in that it involves the creation of a virtual excitation of biexcitons which decay to the longitudinal exciton state.

Jan 1, 19840 citations

Dynamic nonlinear properties of dielectric interference filters

Yuk Tak Chow, Brendan T. McGuckin, Brian S. Wherrett +1 more

We report the use of the nonlinear optical responses of multilayer dielectric interference filters to investigate the electron dynamics of thin-film ZnSe. Filters with spacer layers of ZnSe deposited by both vacuum thermal and molecular-beam techniques are investigated. Using cw irradiation from a 30-mW He-Ne laser, nonlinear Fabry-Perot action and optical bistability are observed for a number of filter designs.1

Journal of the Optical Society of America BFeb 1, 19861 citation

Optical bistability in thin-film CdSe interference filters

Olof Sahlén

Nonlinear, thin-film interference filters with CdSe as spacer material have been fabricated. Optical bistability is observed with less than 3 mW of optical power with wavelengths in the 810–850-nm region. The nonlinear mechanism is shown to be thermal. Filters having thicker CdSe spacers are more stable than filters with very thin spacers.

Journal of the Optical Society of America BJan 1, 19886 citations

Semiconductor nonlinear etalons

H. M. Gibbs, Jack L. Jewell, Nasser N. Peyghambarian +7 more

Abstract Previous observations of optical bistability in nonlinear etalons of ZnS, CuCl and GaAs are summarized. Emphasis is placed upon recent results in GaAs: similar room-temperature optical bistability at powers under 10 mW in bulk and multiple quantum-well etalons; room-temperature bistability achieved with a diode laser as a light source; NOR and other logic operations; optical fibre signal regeneration and continuous wave operation.

Philosophical Transactions of the Royal Society of London Series A Mathematical and Physical SciencesDec 18, 19848 citations

Room Temperature Excitonic Optical Bistability in GaAs Etalons

H. M. Gibbs, S. S. Tamg, Jack L. Jewell +6 more

Optical bistable devices may someday be the key elements of all-optical logic and computing systems.1 Semiconductor devices appear particularly promising because of very large optical nonlinearities permitting the construction of very small devices. The goal is to develop small (≃ 1 μm), fast (≃ 1 ps), low-power (≃ 1 μW), high-temperature (≃ 300 K) devices. Herein is reported room-temperature operation of GaAs devices that are similar in size, speed, and power to the low-temperature pure-GaAs device.2

Conference on Lasers and Electro-OpticsJan 1, 19822 citations