We report on the development of highly sensitive SQUIDs featuring sub-micrometer loop dimensions. The integration of high quality and low capacitance SIS Nb/AlO x /Nb cross-type Josephson tunnel junctions results in white flux noise levels as low as 66 n Φ 0 Hz −1/2 , well below state-of-the-art values of their Nb-based counterparts based on constriction type junctions. Estimation of the spin sensitivity of the best SQUIDs yield S μ 1/2 < 7 μ B Hz −1/2 in the white noise region, suitable for the investigation of small spin systems. We discuss fabrication challenges, show results on the electrical characterization of devices with various pickup loops, and describe options for further improvement, which may push the sensitivity of such devices even to single spin resolution.
Fabrication And Characterization Of High-Quality Nb/Al-AlO
x/Nb Cross-Type Josephson Tunnel Junctions Utilising CMP-based Planarisation Techniques
Josephson tunnel junctions (JJs) are the fundamental building blocks of today's most advanced superconducting electronic components, such as qubits and superconducting quantum interference devices (SQUIDs). Given the ongoing demand for scalability of these devices on the wafer-scale, it is crucial to control the fabrication process as precisely as possible to ensure uniform quality and reproducibility. Today, window-type JJs are often used in the production of DC SQUIDs and while they are reliable and reproducible, they suffer from alignment inaccuracies caused by photolithography and unavoidable parasitic capacitances, thus limiting the energy sensitivity of DC SQUIDs. These problems can be circumvented by producing JJs with cross-type geometry, which allows for smaller junction areas and eliminates parasitic capacitances. Here we discuss the fabrication of Nb/Al-AlOx/Nb-based cross-type JJs, where the trilayer is embedded in sputter-deposited SiO
2 to allow for planarisation of the structures and to ensure the reliable insulation of the sidewalls of the bottom electrode. Instead of lift-off processes that require a lot of time and potentially leave unwanted wings along the edges of microstructures behind that might compromise subsequent layers, we use chemical-mechanical polishing (CMP) for the removal of excess SiO
2. This is not only much faster, but produces smooth and uniform surfaces, which in turn effectively improves the reliability of our JJ production process resulting in a high yield of over
90% on wafer-scale. In addition, we discuss the influence of fabrication details on the quality and electrical properties of our JJs with different junction areas down to
1μm×1μm distributed across the wafer and extract the junction specific quality parameters from their IV-characteristics and their Fraunhofer patterns.
Abstract Josephson tunnel junctions form the basis for various superconductor electronic devices. For this reason, enormous efforts are routinely taken to establish and later on maintain a scalable and reproducible wafer-scale manufacturing process for high-quality Josephson junctions. Here, we present an anodization-free fabrication process for Nb/Al-AlO x /Nb cross-type Josephson junctions that requires only a small number of process steps and that is in general intrinsically compatible with wafer-scale fabrication. We show that the fabricated junctions are of very high quality and, compared to other junction types, exhibit not only a significantly reduced capacitance but also an almost rectangular critical current density profile. Our process hence enables the usage of low capacitance Josephson junctions for superconductor electronic devices such as ultra-low noise dc-superconducting quantum interference devices (SQUIDs), microwave SQUID multiplexers based on non-hysteretic rf-SQUIDs and RFSQ circuits.
We present a structure and a fabrication method for superconducting tunnel junctions down to the dimensions of 200 nm using i-line UV lithography. The key element is a sidewall-passivating spacer structure (SWAPS) which is shaped for smooth crossline contacting and low parasitic capacitance. The SWAPS structure enables formation of junctions with dimensions at or below the lithography-limited linewidth. An additional benefit is avoiding the excessive use of amorphous dielectric materials which is favorable in sub-Kelvin microwave applications often plagued by nonlinear and lossy dielectrics. We apply the structure to niobium trilayer junctions, and provide characterization results yielding evidence on wafer-scale scalability, and critical current density tuning in the range of 0.1–3.0 kA cm −2 . We discuss the applicability of the junction process in the context of different applications, such as SQUID magnetometers and Josephson parametric amplifiers.
Niobium/aluminum-oxide/niobium Josephson tunnel junctions have been fabricated using electron beam evaporation to form all-metal films in a high vacuum system. A quality factor, V m (the product of the maximum dc Josephson current and the subgap resistance defined at 2 mV) between 36–37 mV, has been obtained for the best junctions of a 6 nm-thick Al layer by cooling down the surface of the base electrode for 100 minutes under a high background pressure, before the deposition of aluminum, after the formation of the base niobium electrode. An array of 80 series-connected junctions has also been fabricated using the selective niobium anodization process and the planarization process. The current-voltage characteristics of the array showed a standard deviation of the maximum dc Josephson current of 3.3%.