Direct phonon spin-lattice relaxation of an electron qubit bound by a donor impurity or quantum dot in SiGe heterostructures is investigated. The aim is to evaluate the importance of decoherence from this mechanism in several important solid-state quantum computer designs operating at low temperatures. We calculate the relaxation rate ${1/T}_{1}$ as a function of [100] uniaxial strain, temperature, magnetic field, and silicon/germanium content for Si:P bound electrons and quantum dots. The quantum dot potential is much smoother, leading to smaller splittings of the valley degeneracies. We have estimated these splittings in order to obtain upper bounds for the relaxation rate. In general, we find that the relaxation rate is strongly decreased by uniaxial compressive strain in a SiGe-Si-SiGe quantum well, making this strain an important positive design feature. Ge in high concentrations (particularly over 85%) increases the rate, making Si-rich materials preferable. We conclude that SiGe bound electron qubits must meet certain conditions to minimize decoherence but that spin-phonon relaxation does not rule out the solid-state implementation of error-tolerant quantum computing.Direct phonon spin-lattice relaxation of an electron qubit bound by a donor impurity or quantum dot in SiGe heterostructures is investigated. The aim is to evaluate the importance of decoherence from this mechanism in several important solid-state quantum computer designs operating at low temperatures. We calculate the relaxation rate ${1/T}_{1}$ as a function of [100] uniaxial strain, temperature, magnetic field, and silicon/germanium content for Si:P bound electrons and quantum dots. The quantum dot potential is much smoother, leading to smaller splittings of the valley degeneracies. We have estimated these splittings in order to obtain upper bounds for the relaxation rate. In general, we find that the relaxation rate is strongly decreased by uniaxial compressive strain in a SiGe-Si-SiGe quantum well, making this strain an important positive design feature. Ge in high concentrations (particularly over 85%) increases the rate, making Si-rich materials preferable. We conclude that SiGe bound electron qubits must meet certain conditions to minimize decoherence but that spin-phonon relaxation does not rule out the solid-state implementation of error-tolerant quantum computing.

arXiv:cond-mat/0203319Physical review. B, Condensed matterJul 16, 2002105 citations

Phonon induced coherence in multi-level quantum dot system

哲夫小寺, Tetsuo Kodera, Seigo Tarucha

Jul 1, 20070 citations

Phonon-mediated decoherence in triple quantum dot interferometers

Fernando Domínguez, Sigmund Kohler, Gloria Platero

We investigate decoherence in a triple quantum dot in a ring configuration, in which one dot is coupled to a damped phonon mode while the other two dots are connected to a source and a drain, respectively. In the absence of decoherence, single-electron transport may get blocked by an electron falling into a superposition decoupled from the drain; this is known as a dark state. Phonon-mediated decoherence affects this superposition and leads to a finite current. We study the current and its shot noise numerically within a master equation approach for the electrons and the dissipative phonon mode. A polaron transformation allows us to obtain a reduced equation for only the dot electrons, which provides analytical results in agreement with numerical ones.We investigate decoherence in a triple quantum dot in a ring configuration, in which one dot is coupled to a damped phonon mode while the other two dots are connected to a source and a drain, respectively. In the absence of decoherence, single-electron transport may get blocked by an electron falling into a superposition decoupled from the drain; this is known as a dark state. Phonon-mediated decoherence affects this superposition and leads to a finite current. We study the current and its shot noise numerically within a master equation approach for the electrons and the dissipative phonon mode. A polaron transformation allows us to obtain a reduced equation for only the dot electrons, which provides analytical results in agreement with numerical ones.

arXiv:1103.6228Physical Review BJun 10, 201123 citations

{1/T}_{1}

as a function of [100] uniaxial strain, temperature, magnetic field, and silicon/germanium content for Si:P bound electrons and quantum dots. The quantum dot potential is much smoother, leading to smaller splittings of the valley degeneracies. We have estimated these splittings in order to obtain upper bounds for the relaxation rate. In general, we find that the relaxation rate is strongly decreased by uniaxial compressive strain in a SiGe-Si-SiGe quantum well, making this strain an important positive design feature. Ge in high concentrations (particularly over 85%) increases the rate, making Si-rich materials preferable. We conclude that SiGe bound electron qubits must meet certain conditions to minimize decoherence but that spin-phonon relaxation does not rule out the solid-state implementation of error-tolerant quantum computing.