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Solid-State Electronics

Quantum information processing in electrically defined Silicon triple quantum dot systems

Ji-Hoon Kang, Hoon Ryu

Published Jan 18, 2024• 2 citations
Publisher
DOI
10.1016/j.sse.2024.108863

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With recent experimental advancements demonstrating high-fidelity universal logic gates and basic programmability, silicon-based spin quantum bits (qubits) have emerged as promising candidates for scalable quantum computing. However, implementation of more complex quantum information protocols with many qubits still remains a critical challenge for realization of practical programmability in silicon devices. In this study, we present a computational investigation of entanglement-based quantum information applications implemented on an electrically defined quantum dot structure in silicon. Using in-house multi-scale simulations based on tight-binding calculations augmented with classical physics with bulk properties, we model a five quantum dot system that can create up to five electron spin qubits, and discuss details of control engineering needed to implement single-qubit rotations and two-qubit logic operations in a programmable manner. Using these elementary operations, we design a five-qubit quantum teleportation protocol and computationally verify its end-to-end operation including a simple but clear analysis on how the designed circuit can be affected by charge noise. With engineering details that are not well uncovered by experiments, our results demonstrate the advanced programmability of silicon quantum dot systems, delivering the practical guidelines for potential designs of quantum information processes based on electrically defined silicon quantum dot structures.
Abstract Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semiconductor quantum computation. To satisfy the connectivity requirements and reduce the lithographic complexity, utilizing the qubit array structure and the circuit quantum electrodynamics (cQED) architecture together is expected to be a feasible scaling scheme. A triple-quantum dot (TQD) coupled with a superconducting resonator is regarded as a basic cell to demonstrate this extension scheme. In this article, we investigate a system consisting of a silicon TQD and a high-impedance TiN coplanar waveguide (CPW) resonator. The TQD can couple to the resonator via the right double-quantum dot (RDQD), which reaches the strong coupling regime with a charge–photon coupling strength of g 0/(2π) = 175 MHz. Moreover, we illustrate the high tunability of the TQD through the characterization of stability diagrams, quadruple points (QPs), and the quantum cellular automata (QCA) process. Our results contribute to fostering the exploration of silicon-based qubit integration.