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Applied Physics Letters

Low-frequency excess noise in Nb-Al2O3-Nb Josephson tunnel junctions

Bonaventura Savo, F. C. Wellstood, John L. Clarke

Published Jun 15, 1987• 72 citations
Publisher

Abstract

A fabrication technique for Nb-Al2O3-Nb Josephson tunnel junctions is described that is an alternative to the trilayer method generally used. At 4.2 K the magnitude of the low-frequency noise in the critical current I0 of four junctions with areas 𝒜 ranging from 7.8 to 115 μm2 was characterized by S1/2I0𝒜1/2/I0 =(14±6)pA μm/μA Hz1/2, where SI0 is the spectral density of the excess noise at 1 Hz. The noise power spectrum of one 3×3 μm2 junction exhibited a Lorentzian feature associated with the emptying and filling of a single trap in the barrier. The low level of noise makes these junctions attractive for use in superconducting quantum interference devices.

DOI
10.1063/1.97738

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Low noise DC SQUIDs fabricated in Nb-Al/sub 2/O/sub 3/-Nb trilayer technology

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Applied Physics Letters•Nov 15, 1979•61 citations
A fabrication technique for Nb-Al2O3-Nb Josephson tunnel junctions is described that is an alternative to the trilayer method generally used. At 4.2 K the magnitude of the low-frequency noise in the critical current I0 of four junctions with areas 𝒜 ranging from 7.8 to 115 μm2 was characterized by S1/2I0𝒜1/2/I0 =(14±6)pA μm/μA Hz1/2, where SI0 is the spectral density of the excess noise at 1 Hz. The noise power spectrum of one 3×3 μm2 junction exhibited a Lorentzian feature associated with the emptying and filling of a single trap in the barrier. The low level of noise makes these junctions attractive for use in superconducting quantum interference devices.
The authors have designed, fabricated and tested all-refractory DC SQUIDs in Nb-Al/sub 2/O/sub 3/-Nb trilayer technology that have noise performance comparable to the best previously reported for any technology. A variety of SQUID designs were incorporated as part of a trilayer process development test vehicle. SQUID inductance, junction area, and resistive shunt geometry were varied in matrix fashion to give SQUIDs with near-optimum parameter values for a factor of five range in Josephson current density and shunt sheet resistance. The devices were fabricated using a selective niobium anodization with a minimum feature size of 2 mu m. The base electrode and Nb wiring were patterned with dry etching, and the junction areas were defined by anodization: the Ti resistors were patterned with a lift-off process. Current density on different wafers was varied from 400 to 1000 A/cm/sup 2/ with typical junction V/sub m/'s of 60 mV. The shunt sheet resistance was varied in the 1-5- Omega / Square Operator range. The noise was measured with an RF SQUID direct small-signal readout scheme. A 50-pH SQUID with 3- mu m/sup 2/, 16- mu A junctions and 14- Omega shunt resistors was shown to have an ideally low white noise of 1*10/sup -13/ Phi /sub 0//sup 2//Hz, a white to 1/f crossover frequency at 7 Hz, and a noise level less than 6*10/sup -12/ Phi /sub 0//sup 2//Hz at 0.1 Hz.
We have fabricated dc superconducting quantum interference devices (SQUIDs) incorporating Nb/Al-oxide/Nb Josephson junctions in both stripline and washer geometries. Low-frequency noise in excess of that predicted by the resistively-shunted junction model is present in both geometries and is demonstrated to be flux noise. This flux noise is not environmental. Improvements in fabrication processing over the past four years have reduced the level of this flux noise. SQUIDs are now fabricated with PdAu resistors, Nb wiring layers, and SiO/sub 2/ interlayer dielectric. In our best well-coupled SQUIDs, the white-noise energy sensitivity is 5/spl times/10/sup -31/ J/spl middot/s, with a 1/f knee below 0.1 Hz. We believe further reduction in the flux noise might be obtained with the use of on-chip flux shielding and/or trapping structures.
Abstract Decoherence in quantum bits (qubits) is a major challenge for realizing scalable quantum computing. One of the primary causes of decoherence in qubits and quantum circuits based on superconducting Josephson junctions is the critical current fluctuation. Many efforts have been devoted to suppressing the critical current fluctuation in Josephson junctions. Nonetheless, the efforts have been hindered by the defect-induced trapping states in oxide-based tunnel barriers and the interfaces with superconductors in the traditional Josephson junctions. Motivated by this, along with the recent demonstration of 2D insulator h -BN with exceptional crystallinity and low defect density, we fabricated a vertical NbSe 2 / h -BN/Nb Josephson junction consisting of a bottom NbSe 2 superconductor thin layer and a top Nb superconductor spaced by an atomically thin h -BN layer. We further characterized the superconducting current and voltage ( I – V ) relationships and Fraunhofer pattern of the NbSe 2 / h -BN/Nb junction. Notably, we demonstrated the critical current noise (1/ f noise power) in the h -BN-based Josephson device is at least a factor of four lower than that of the previously studied aluminum oxide-based Josephson junctions. Our work offers a strong promise of h -BN as a novel tunnel barrier for high-quality Josephson junctions and qubit applications.
Superconducting quantum interference devices (SQUIDs) with 3 μm × 3 μm or 4 μm × 4 μm self-shunted Nb/NbxSi1-x/Nb Josephson junctions are designed and fabricated. By adjusting the Nb content and thickness of the NbxSi1-xbarrier, the parameters of the SQUIDs can be easily tuned. The optimal parameters for the barrier are found to be a thickness of around 15 nm and 7% Nb content. The I-V curve, V-Φ curve, and noise spectrum are measured for the SQUID. The high frequency noise for the SQUID is only about several hundred nΦ0/√Hz. Another advantage for these devices is found, that it is not sensitive to the static electricity.
The design, fabrication, and noise properties of an ultra-low-noise tunnel junction dc SQUID (superconducting quantum interference device) are presented. The two resistively shunted Pb-alloy tunnel junctions are each 3.6 μm diam. The SQUID has an inductance L of ≈11 pH, a critical current per junction, I0 of ≈100 μA, and a resistance per shunt R of ≈2 Ω. At 2.3 K, eI0R≈kBT, and simple theory predicts that the minimum intrinsic energy sensitivity should be ≈2h. The actual minimum value of the measured high-frequency (70 kHz) flux noise at 4.2 K is φn=1.3×10−7φ0 Hz−1/2. This corresponds to an intrinsic energy sensitivity, φ2n/2L, of 3.2×10−33 J Hz−1 or 5h. Lowering the bath temperature to 1.8 K gave no improvement in performance.