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IEEE Journal of Quantum Electronics

Electrical excitation of lasing levels

C.B. Mills

Published Jun 1, 1972• 1 citation
Publisher
DOI
10.1109/jqe.1972.1077081

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Lasing without population inversion was studied in a three-level solid state medium of ruby. The two closely-spaced lower levels are the Zeeman split sublevels of the ground state 4A2 of ruby, corresponding to M=−3/2 and M=+l/2. The transition between the lower levels is the electric dipole-forbidden. When the angle between the constant magnetic field and C-axis of ruby is 90°, the transition matrix element of the electric dipole-forbidden transition is quite large.1 A strong microwave field which operates at K-band coherently couples the two lower levels.2 Changing the constant magnetic field intensity or adjusting the frequency of the pumping microwave field, the exact resonant excitation can be established. The upper level of the lasing process is the Zeeman split sub-level M=−l/2 of 2E state. The ruby crystal, with about 0.05% chromium concentration, is placed at the center of a cylindrical cavity and cooled by liquid helium. With 500 Gauss magnetic field, the coupling microwave frequency is 13.1 Ghz and the required power is around 100 W/cm2.
Summary form only given.The behavior of a laser intensity as a function of a pump rate is studied. We consider a three-level lasing scheme with two different types of pumping. In the first case, the lower lasing level is depleted to the ground state, and then the pumping is used to excite the atom from the ground state to the upper lasing level. In the second case the pumping is used to excite the atom directly from the lower lasing level to one of the excited states, which is then depleted to the upper lasing level. We refer these two types of pumping as type 1 and type 2, respectively. It is shown that although these two schemes are equivalent mathematically, i.e., they are formally described by the same set of equations, physically their dynamical properties are completely different. It is noted that the pumping of the type 1 does not affect either of lasing levels directly, whereas the pumping of the type 2 does connect the lower lasing level with one of the excited states. It is this difference of the two ways of pumping which is responsible for the crucial difference in the dynamic behavior of the lasing schemes of types 1 and 2.