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Applied Physics Letters

Observation of enhanced photoluminescence in erbium-doped semiconductor microdisk resonator

D. Y. Chu, Seng‐Tiong Ho, X. Z. Wang, Bruce W. Wessels, Wengang Bi, Charles W. Tu, Rolando P. Espindola, Shengli Wu

Published May 22, 1995• 9 citations
Publisher

Abstract

We report experimental results from an erbium-doped gallium phosphide microdisk resonator pumped by a Ti-sapphire laser at 980 nm. Fabrication and characterization of the microdisk resonator are discussed. Enhanced Er+3 intra-4f-shell photoluminescence was observed in the microdisk resonator due to microcavity effect and compared to a thin film sample. At low pumping power intensity, the photoluminescence from erbium-doped gallium phosphide microdisks is an order stronger than that from a thin film sample.

DOI
10.1063/1.113448

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IEE Proceedings - Optoelectronics•Dec 1, 1998•17 citations
We report experimental results from an erbium-doped gallium phosphide microdisk resonator pumped by a Ti-sapphire laser at 980 nm. Fabrication and characterization of the microdisk resonator are discussed. Enhanced Er+3 intra-4f-shell photoluminescence was observed in the microdisk resonator due to microcavity effect and compared to a thin film sample. At low pumping power intensity, the photoluminescence from erbium-doped gallium phosphide microdisks is an order stronger than that from a thin film sample.
We report a strong increase in the intensity of spontaneous emission from erbium ions embedded into an active layer of amorphous silicon oxide (a-SiO x ) in a planar microcavity based on a-Si:H/a-SiO x layers. Using eigenmodes of this microcavity both for excitation (pumping) and for the extraction of photoluminescence, it is possible to increase the spontaneous emission intensity from erbium ions by a factor of about 500 as compared to the photoluminescence from a single doped a-SiO x (Er) film.
One dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer. Photoluminescence from the cavities around 1.54 microm is studied at cryogenic and room temperatures at different optical pump powers. The resonators demonstrate Purcell enhanced absorption and emission rates, also confirmed by time resolved measurements. Resonances exhibit linewidth narrowing with pump power, signifying absorption bleaching and the onset of stimulated emission in the material at both 5.5 K and room temperature. We estimate from the cavity linewidths that Er has been pumped to transparency at the cavity resonance wavelength.
One-dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer.Photoluminescence from the cavities around 1.54 µm is studied at cryogenic and room temperatures at different optical pump powers.The resonators demonstrate Purcell enhanced absorption and emission rates, also confirmed by time-resolved measurements.Resonances exhibit linewidth narrowing with pump power, signifying absorption bleaching and the onset of stimulated emission in the material at both 5.5 K and room temperature.We estimate from the cavity linewidths that Er has been pumped to transparency at the cavity resonance wavelength.
Since the advent of vertical cavity surface-emitting lasers, a renewed interest has also emerged for the spontaneous emission from Fabry-Pérot microcavities. Changes in spontaneous emission characteristics in a 1D microcavity were predicted long ago,1 but have been demonstrated only recently in the optical domain for solid-state, e.g. semiconductor, structures where changes in spectral purity, lifetime, and emission intensity were observed.2 However, the interpretation of these effects is somewhat obscure, because these structures are highly absorbing and often involve band-to-band, rather than atomic, transitions. In the present study, we use optically transparent Si/SiO2 cavities, consisting of two coplanar Si/SiO2 distributed Bragg reflectors (DBR) around a (λ/2) SiO2 active region, which was doped with ~0.2 at.% Er3+ ions through MeV ion implantation. The Er3+ ions in SiO2 exhibit a sharp, atomic-like, intra-4f transition around λem=1.54 μm, which is effectively shielded by the outerlying filled 5s2 and 5p6 shells. Recently, we reported on the considerable enhancement of the spontaneous emission intensity out of such an Er-doped microcavity.3 In this paper, we present a more detailed study of the modified spontaneous emission, including fluorescence decay measurements to study the effect of the cavity on the spontaneous emission rate.
The temperature dependence of the optical excitation cross section of Er implanted n-type GaN was studied using photoluminescence excitation spectroscopy. Due to the large 3.4 eV band gap of GaN, it was possible to probe two Er absorption lines using a tunable Ti:sapphire laser in the 770–1010 nm range. Photoluminescence excitation spectra exhibiting several Stark splittings revealed a complex dependence upon temperature. The largest excitation cross section in the third excited state was 1.65×10−20 cm2 at an excitation wavelength of 809.4 nm when measured at 77 K. This value is roughly three times larger than the cross section in the second excited state at 4.8×10−21 cm2 when pumping at 983.0 nm. The Er-related photoluminescence was reduced between 1.5 and 4.8 times when going from 77 K to room temperature, except when pumping around 998 nm. At this excitation wavelength the room temperature photoluminescence was stronger by a factor of 1.26 compared to that at 77 K.
Successful incorporation of both erbium and ytterbium in alumina by ion implantation is reported. Some evidence for indirect pumping of erbium through the transfer of energy from ytterbium has been observed. Both plasma-enhanced CVD deposited alumina thin films and sapphire crystals were employed as substrates. Yb3+ and Er3+ concentrations ranged from 2.4 At% to 8 At% and from 0.4 At% to 0.8 At%, respectively. The samples show strong, broad, room-temperature photoluminescence at λ = 1.53 µm corresponding to the intra-4f transitions between the 4I13/2 (first excited) and the 4I15/2 (ground) state of Er3+. The full width at half maximum of the emission spectrum is as high as 67 nm for the Al2O3 thin films; for the sapphire crystals it is 45 nm. The fluorescence lifetime of the samples has been measured to be as high as 4.2 ms at 50 mW pump power.