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Optics Letters

Optical bistability in axially modulated OmniGuide fibers

Marin Soljacic A, Mihai Ibanescu A, Steven G. Johnson, John D. Joannopoulos, Yoel Fink

Published Apr 1, 2003• 31 citations
Publisher

Abstract

We demonstrate the feasibility of optical bistability in an axially modulated nonlinear OmniGuide fiber through analytical theory and detailed numerical experiments. At 1.55-microm carrier wavelength, the in-fiber devices that we propose can operate with only a few tens of milliwatts of power, can have a nearly instantaneous response and recovery time, and can be shorter than 100 microm.

DOI
10.1364/ol.28.000516

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We demonstrate the feasibility of optical bistability in an axially modulated nonlinear OmniGuide fiber through analytical theory and detailed numerical experiments. At 1.55-microm carrier wavelength, the in-fiber devices that we propose can operate with only a few tens of milliwatts of power, can have a nearly instantaneous response and recovery time, and can be shorter than 100 microm.
We demonstrate, for the first time to our knowledge, optical bistability on a highly integrated silicon device, using a 5-microm-radius ring resonator. The strong light-confinement nature of the resonator induces nonlinear optical response with low pump power. We show that the optical bistability allows all-optical functionalities, such as switching and memory with microsecond time response and a modulation depth of 10 dB, driven by pump power as low as 45 microW. Silicon optical bistability relies on a fast thermal nonlinear optical effect presenting a 500-kHz modulation bandwidth.
Dispersive bistability arising from the carrier-dependence of the refractive index has been observed in semiconductor lasers operated just below threshold with a small injected optical signal. The minimum optical input required for switch-up is as low as 1 μW for InGaAsP amplifiers at 1.55 μm(1) and 1.3 μm(2) (cf 30 μW for GaAs devices(3)). As yet, reliable measurements of the dynamic response are not (4) available, although we predict recovery times to be on the order of carrier lifetimes, ie a few nanoseconds at room temperature. This contribution will review our experimental and theoretical work on 1.55 μm amplifier bistability and set it in the context of other semiconductor bistable optical devices.