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Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

Slow light in semiconductor waveguides: Theory and experiment

Jesper Mørk, F. Öhman, M. van der Poel, Per Lunnemann, Torben Roland Nielsen, P. Kaer Nielsen, H. Thyrrestrup Nielsen, Kresten Yvind

Published Jun 1, 2007• 0 citations
Publisher

Abstract

Slow light in multi-section quantum well waveguide structure is realized using either coherent population oscillations (CPO) and electromagnetically induced transparency (EIT) is studied. The properties of the two schemes are compared and discussed.
DOI
10.1109/cleoe-iqec.2007.4386121

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Investigations of slow and fast light effects in semiconductor waveguides entail interesting physics and point to a number of promising applications. In this review we give an overview of recent progress in the field, in particular focusing on the physical mechanisms of electromagnetically induced transparency and coherent population oscillations. While electromagnetically induced transparency has been the most important effect in realizing slowdown effects in atomic gasses, progress has been comparatively slow in semiconductors due to inherent problems of fast dephasing times and inhomogeneous broadening in quantum dots. The physics of electromagnetically induced transparency in semiconductors is discussed, emphasizing these limitations and recent suggestions for overcoming them. On the other hand, the mechanism of coherent population oscillations relies on wave mixing effects and is well suited for semiconductor waveguides. Recent experimental progress is reviewed, emphasizing new ideas that have significantly enhanced the degree of control that can be exercised and the frequency range that can be achieved. Thus, applications within microwave photonics appear to be within reach.
This is a detailed study of slow light based on quantum effects in semiconductor nanostructures. We propose to implement an optical buffer using semiconductor quantum dots and quantum wells based on coherent population oscillation and spin related electromagnetically induced transparency. We identify different pump-and-probe schemes and develop comprehensive theoretical models which include important physical mechanisms in semiconductors. Semiconductors have unique properties which are inaccessible to other slow light media, and these enable the possibilities of controlling the semiconductor-based optical buffer in addition to the optical method. We investigate how to electrically control group index (slowdown factor) in quantum dots by using reverse bias voltage and forward injection current. We also develop a model to use the anisotropy of the light-hole exciton to vary the slowdown factor via two different mechanisms (coherent population oscillation and spin related electromagnetically induced transparency). Finally, we propose an idea to use the strain to control the spin relaxation time in semiconductors, which can help spin-dependent slow light in semiconductors. This research shows that the semiconductor is a promising candidate to demonstrate an optical buffer and can provide more flexible control than other slow light materials.
Coherent population oscillation (CPO) is a successful method used to implement semiconductorbased slow light using the coherent pump-probe effect. The first demonstration was carried out in semiconductormultiple quantumwells (MQWs) [1-3] soon after the experimental demonstration of slow light in ruby crystal [4,5]. Later, slow light based on CPO in semiconductor QWs and quantum dots (QDs)was also successfully demonstrated at room temperature [6-10], and the slow-light regime was soon extended to the corresponding fast-light regime in semiconductor gainmedia [11-17] using a semiconductor optical amplifier (SOA) alone or combined with an electroabsorbtion (EA) section. The basicworking principle of slow light based onmost pump-probe schemes is to decrease the group velocity vg using the sharp variation of the refractive index ∂n′/∂ω within a narrow frequency range: vg = c ng = c n′ + ω ∂n′ , (2.1) where ng = n′ + ω∂n′/∂ω is the group index n′ is the real part of the refractive index n For the CPO case, the required sharp variation of the refractive index originates from the population oscillation induced by the pump and probe signals applied to a two-level system, as indicated in Figure 2.1. The induced population oscillation generates a new polarization component and changes the susceptibility and thus the refractive index experienced by the signal. In semiconductor quantum structures, this two-level system can be the heavy-hole (HH) exciton [1-3,6,18] of QWs and QDs, or the valence and conductionground states of QDs [18,19]. In principle, as long as the optical transition between the two states is dipole-allowed, the slow light based on CPO can be implemented.
We demonstrate the use of coherent population oscillations (CPO) to realize a monolithically integrated semiconductor device which allows voltage controlled tuning of the group velocity corresponding to a phase shift of up to 55 degrees at a frequency of 10 GHz. By combining sections of slow and fast light, corresponding to absorption and gain, we demonstrate control of both the slow-down factor and the signal amplitude, which is important for applications as true-time delay in microwave photonics. The physics of CPO is discussed in relation to electromagnetically induced transparency (EIT). In particular, we demonstrate and explain the possibility of achieving transparency when using the effect of CPO despite the fact that it relies on only a partial saturation of an absorption line.
The last decade is of great significance for the development of slow light technology.In order to study on the slow light technology deeply,several kinds of slowing light technologies,such as Electromagnetically Induced Transparency(EIT),Coherent Population Oscillation(CPO),Stimulated Brillouin Scattering(SBS) and photonic crystal waveguide,were contrasted and analyzed.Also some important theoretical and technical developments to improve performance of slow light in last decade were introduced,and then problems and shortcomings existing in slowing technology were discussed.Finally,this paper focuses on some novel technologies of slowing down light velocity and their primary applications.Moreover,it forecasts the future developing trends of slow light and its potential applications.Through research on slow light,results show that slow light will realize more and more significant application values in the field of optical fiber sensing and other fields.