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Optics Express

Voltage-controlled slow light in an integrated semiconductor structure with net gain

F. Öhman, Kresten Yvind, Jesper Mørk

Published Jan 1, 2006• 42 citations
Publisher

Abstract

We demonstrate the use of coherent population oscillations (CPO) to realize a monolithically integrated semiconductor device which allows voltage controlled tuning of the group velocity corresponding to a phase shift of up to 55 degrees at a frequency of 10 GHz. By combining sections of slow and fast light, corresponding to absorption and gain, we demonstrate control of both the slow-down factor and the signal amplitude, which is important for applications as true-time delay in microwave photonics. The physics of CPO is discussed in relation to electromagnetically induced transparency (EIT). In particular, we demonstrate and explain the possibility of achieving transparency when using the effect of CPO despite the fact that it relies on only a partial saturation of an absorption line.

DOI
10.1364/oe.14.009955

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Optics Express•Jan 1, 2005•182 citations
We demonstrate the use of coherent population oscillations (CPO) to realize a monolithically integrated semiconductor device which allows voltage controlled tuning of the group velocity corresponding to a phase shift of up to 55 degrees at a frequency of 10 GHz. By combining sections of slow and fast light, corresponding to absorption and gain, we demonstrate control of both the slow-down factor and the signal amplitude, which is important for applications as true-time delay in microwave photonics. The physics of CPO is discussed in relation to electromagnetically induced transparency (EIT). In particular, we demonstrate and explain the possibility of achieving transparency when using the effect of CPO despite the fact that it relies on only a partial saturation of an absorption line.
Investigations of slow and fast light effects in semiconductor waveguides entail interesting physics and point to a number of promising applications. In this review we give an overview of recent progress in the field, in particular focusing on the physical mechanisms of electromagnetically induced transparency and coherent population oscillations. While electromagnetically induced transparency has been the most important effect in realizing slowdown effects in atomic gasses, progress has been comparatively slow in semiconductors due to inherent problems of fast dephasing times and inhomogeneous broadening in quantum dots. The physics of electromagnetically induced transparency in semiconductors is discussed, emphasizing these limitations and recent suggestions for overcoming them. On the other hand, the mechanism of coherent population oscillations relies on wave mixing effects and is well suited for semiconductor waveguides. Recent experimental progress is reviewed, emphasizing new ideas that have significantly enhanced the degree of control that can be exercised and the frequency range that can be achieved. Thus, applications within microwave photonics appear to be within reach.
Room temperature quantum-well semiconductor optical amplifier with large input power is utilized in both the absorption and gain regime as an optical group delay and advance (slow and fast light), respectively. Material resonance created by coherent population oscillation and four wave mixing is tuned by electrical injection current, which in turn controls the speed of light. The four-wave mixing and population oscillation model explains the slow-to-fast light switching. Experimentally, the scheme achieves 200 degrees phase shift at 1 GHz, which corresponds to 0.56 delay-bandwidth product. The device presents a feasible building block of a multi-bit optical buffer system.
We review the theory of slow and fast light effects due to coherent population oscillations in semiconductor waveguides, and potential applications of these effects in microwave photonic systems as RF phase shifters. In order to satisfy the application requirement of 360° RF phase shift at different microwave or millimeter-wave frequency bands, we present several schemes to increase the achievable RF phase shift by enhancing light slow-down or speed-up. These schemes include integrating gain and absorption sections, optical filtering and the exploitation of the initial chirp effects. As a real application in microwave photonics, a widely tunable microwave photonic notch filter with 100% fractional tuning range is also proposed and demonstrated.
Coherent population oscillation (CPO) is a successful method used to implement semiconductorbased slow light using the coherent pump-probe effect. The first demonstration was carried out in semiconductormultiple quantumwells (MQWs) [1-3] soon after the experimental demonstration of slow light in ruby crystal [4,5]. Later, slow light based on CPO in semiconductor QWs and quantum dots (QDs)was also successfully demonstrated at room temperature [6-10], and the slow-light regime was soon extended to the corresponding fast-light regime in semiconductor gainmedia [11-17] using a semiconductor optical amplifier (SOA) alone or combined with an electroabsorbtion (EA) section. The basicworking principle of slow light based onmost pump-probe schemes is to decrease the group velocity vg using the sharp variation of the refractive index ∂n′/∂ω within a narrow frequency range: vg = c ng = c n′ + ω ∂n′ , (2.1) where ng = n′ + ω∂n′/∂ω is the group index n′ is the real part of the refractive index n For the CPO case, the required sharp variation of the refractive index originates from the population oscillation induced by the pump and probe signals applied to a two-level system, as indicated in Figure 2.1. The induced population oscillation generates a new polarization component and changes the susceptibility and thus the refractive index experienced by the signal. In semiconductor quantum structures, this two-level system can be the heavy-hole (HH) exciton [1-3,6,18] of QWs and QDs, or the valence and conductionground states of QDs [18,19]. In principle, as long as the optical transition between the two states is dipole-allowed, the slow light based on CPO can be implemented.
We experimentally demonstrate slow-down of light by a factor of three in a 100 microm long semiconductor waveguide at room temperature and at a record-high frequency of 16.7 GHz. It is shown that the group velocity can be controlled all-optically as well as through an applied bias voltage. A semi-analytical model based on the effect of coherent population oscillations and taking into account propagation effects is derived and is shown to well account for the experimental results. It is shown that the carrier lifetime limits the maximum achievable delay. Based on the general model we analyze fundamental limitations in the application of light slowdown due to coherent population oscillations.