Optical bistability in equilateral- triangle-resonator (ETR) microlasers are analyzed based on two mode rate equations with asymmetrical cross gain saturation. Optical bistability is observed in the fabricated InP/GaInAsP ETR microlasers at low temperature.
We demonstrate optically bistable (light switching light) operation in a room-temperature InGaAsP Fabry-Perot amplifier. The amplifier is an InGaAsP/InP laser structure biased at ~95% of its lasing threshold. It is switched with <3 μW of optical power provided by the mechanically chopped output of a quasi-single-mode InGaAsP/InP laser. The experimental apparatus is depicted in Fig, 1. A change in the refractive Index in the amplifier of only 5 × 10−4 is sufficient to cause switching. Input and output pulses from the nonlinear amplifier are shown in Fig. 2 when the source frequency is initially detuned by 14 GHz from the closest Fabry-Perot mode of the amplifier. Smaller switching powers are required at lesser detunings. The physical mechanism of the intensity-dependent change of the refractive index is thought to be the change in carrier density resulting from stimulated recombination of free carriers.
We are reporting the first observation of optical bistability in InGaAsP. The motivation for much of the present research in all-optical signal processing is that optical devices can perform a large number of independent operations simultaneously, rather than sequentially. In cases in which sequential operations would constitute a bottleneck in all-electronic systems, a great deal of time may be saved by using optical devices as part of a larger hybrid system. In order to facilitate interfacing of optical and electronic components wavelength standardization at 1.3 microns is desirable for compatibility with existing semiconductor laser sources and fibers.