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Applied Physics Letters

High-speed operation of quasi-one junction superconducting quantum interference device based on high-Tc multilayer technology

H. Sugiyama, H. Wakana, Seiji Adachi, Y. Tarutani, K. Tanabe

Published Apr 1, 2004• 14 citations
Publisher

Abstract

We designed a quasi-one junction superconducting quantum interference device (QOS) based on single-flux-quantum technology using high-Tc superconductors. A circuit containing 10 interface-engineered ramp-edge Josephson junctions was fabricated on a La-substituted YBa2Cu3Oy ground plane. The output voltage as a function of the input current for the QOS indicated correct operation as a periodic comparator at clock frequency of 94 and 77 GHz at 35 and 40 K, respectively. A comparison of the observed maximum operating frequency with the product of the critical current and normal resistance for the junctions suggests that comparator operation above 100 GHz at 40 K is possible if one optimizes the junction parameters.

DOI
10.1063/1.1690496

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Applied Physics Letters•Jan 10, 1994•27 citations
We designed a quasi-one junction superconducting quantum interference device (QOS) based on single-flux-quantum technology using high-Tc superconductors. A circuit containing 10 interface-engineered ramp-edge Josephson junctions was fabricated on a La-substituted YBa2Cu3Oy ground plane. The output voltage as a function of the input current for the QOS indicated correct operation as a periodic comparator at clock frequency of 94 and 77 GHz at 35 and 40 K, respectively. A comparison of the observed maximum operating frequency with the product of the critical current and normal resistance for the junctions suggests that comparator operation above 100 GHz at 40 K is possible if one optimizes the junction parameters.
We have designed and fabricated a planar HTS (DyBaCuO) superconducting quasi-one junction (QOS) Superconducting Quantum Interference Device (SQUID) for a flash A/D converter using step-edge Josephson junctions. The simulation suggests that the HTS QOS bandwidth is limited with 2.6 GHz by an external shunted capacitor. To fabricate a 1–2 µ m size SQUID inductance hole and step-edge junctions, a stepper photo-lithography process was employed. To make a sensitive comparator, a flux transformer was directly installed on the QOS, whose magnetic field gain of 833 was in agreement with the designed value of 828. The basic analog to digital conversion test of the QOS comparator was confirmed at a frequency of 10 kHz–1 MHz at 77 K. The dynamic range was estimated as 2Φ0.
We fabricated and tested high-temperature superconducting (HTS) rapid-single-flux-quantum (RSFQ) circuits using interface-engineered Josephson junction (IEJ). The characteristics of high-speed operation were examined by voltage-divider operation based on the toggle-flip-flop circuit. An operation at 155 GHz was obtained at 15 K and the proper functioning of the voltage divider was observed up to 27 K. Temperature dependence of the maximum operation speed was analyzed by circuit simulation with thermal-noise sources. To achieve higher speed operation using a Josephson junction with a higher I/sub c/R/sub n/ product, we also fabricated an RSFQ balanced comparator using IEJ; proper switching characteristics of the circuit was confirmed up to 190 GHz at 30 K. The bias condition dependencies were studied based on the circuit simulations in the relationship of the I/sub c/R/sub n/ product. The results of circuit simulation indicate that a Josephson junction with an I/sub c/R/sub n/ product of more than 0.7 mV is required for high-speed operation (100 GHz) in high-temperature range (30-40 K). We believe that the IEJ is a promising junction candidate for realizing high-speed operation in a high-temperature range.
We designed and fabricated a rapid-single-flux-quantum T flip-flop (TFF) with high- T c interface-engineered Josephson junctions. Y 1 Ba 2 Cu 3 O 7− d and Sr 2 AlTaO 6 were deposited for the superconducting layer and the insulating layer, respectively. The Josephson junction was formed through an interface treatment process using Ar ion milling and vacuum annealing. We simulated a TFF circuit and designed a physical layout using WRspice and Xic. The fabricated TFF has a minimum junction width of 3 μm. Through the measurement of the voltage divider operation, the maximum operation frequency was estimated to be 53 GHz at 22 K and 106 GHz at 12 K.
We have developed the fabrication process, the circuit design technology, and the cryopackaging technology for high-Tc single flux quantum (SFQ) devices with the aim of application to an analog-to-digital (A/D) converter circuit for future wireless communication and a sampler system for high-speed measurements. Reproducibility of fabricating rampedge Josephson junctions with IcRn products above 1mV at 40K and small Ic spreads on a superconducting groundplane was much improved by employing smooth multilayer structures and optimizing the junction fabrication process. The separated base-electrode layout (SBL) method that suppresses the Jc spread for interface-modified junctions in circuits was developed. This method enabled low-frequency logic operations of various elementary SFQ circuits with relatively wide bias current margins and operation of a toggle-flip-flop (T-FF) above 200GHz at 40K. Operation of a 1:2 demultiplexer, one of main elements of a hybrid-type Σ-Δ A/D converter circuit, was also demonstrated. We developed a sampler system in which a sampler circuit with a potential bandwidth over 100GHz was cooled by a compact stirling cooler, and waveform observation experiments confirmed the actual system bandwidth well over 50GHz.
The Josephson junction, a key component of superconducting quantum circuits, is much less mature, especially for the high-transition (high-Tc) temperature cuprate superconductors. Herein, we report on the realization of high-Tc Josephson junction based on nanoslits on a SrTiO3 substrate. We demonstrate the ability to manipulate the current–voltage characteristics of YBa2Cu3O7−x bridges continuously from superconducting current-dominated to Josephson junction behavior by changing the irradiation parameters of the focused Ga+ ion beam on a single-crystal SrTiO3 substrate. The periodic critical current that depends on the magnetic flux coupled into the superconducting quantum interference devices was observed, which exactly reflects the effects of quantum tunneling and flux quantization. To some extent, this weak link within the framework of the semiconductor manufacturing process shows the potential to provide a cost-effective, highly efficient, and reliable pathway for scaling up quantum mechanical superconducting circuits, which is promising for the fabrication process.
All high-Tc, multilevel edge junction superconducting quantum interference devices (SQUIDs) which now operate at 77 K have been fabricated using laser-ablated YBaCuO electrodes and in situ laser-ablated SrTiO3 for the barrier material. Devices with a SQUID inductance of about 70 pH have a peak to peak voltage swing, VΦ, up to 8 μV (dV/dΦ≂25 μV) and a flux noise (SΦ) of about 3×10−10 Φ20/Hz in the white noise region. IcRn, products for these devices are about 35 μV at 77 K with Ic in the range of 3–100 μA and operation to temperatures as high as 84 K observed. Scaling of the junction conductance and critical current with junction size has been measured on many devices and we observe an IcRn product that varies approximately as J0.89c.