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The European Physical Journal B

Interaction of holes within Wiegmanns approach to the Hubbard model

D. Foerster

Published Sep 1, 1989• 15 citations
Publisher
DOI
10.1007/bf01307876

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Andrei and Wiegmann derived the exact solution to the s-d problem independently. If the s-d interaction is localized, only the radial degree of freedom needs to be considered, and the problem may be reduced to the Schrödinger equation in one-dimensional real space. When the solution is assumed to be in accord with Bethe's ansatz, the problem can be treated in exactly the same manner as in the one-dimensional Hubbard model, and the exact solution method used therein can be adapted as it is to the s–d problem. In this way, each of the various physical quantities can be represented by a single function all the way from high to low temperatures. This is a function of T/TK , and its functional form is found to be consistent with the result of Wilson, insofar as they can be compared. This approach is mathematically powerful, and we may apply it to the case with a magnetic field, the case with S > 1/2, and the Anderson model. However, the focus of our attention in this chapter will be to discuss the initial analysis of Andrei (Andrei, 1980; Andrei and Lowenstein, 1981; Andrei et al. , 1983) and Wiegmann (Weigmann, 1981; Filyov et al. , 1981). A one-dimensional model At first, let us consider the movement of conduction electrons on a onedimensional line. Even in the three-dimensional case, if the interaction is δ function-like, only s -wave scattering arises.

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Andrei and Wiegmann derived the exact solution to the s-d problem independently. If the s-d interaction is localized, only the radial degree of freedom needs to be considered, and the problem may be reduced to the Schrödinger equation in one-dimensional real space. When the solution is assumed to be in accord with Bethe's ansatz, the problem can be treated in exactly the same manner as in the one-dimensional Hubbard model, and the exact solution method used therein can be adapted as it is to the s–d problem. In this way, each of the various physical quantities can be represented by a single function all the way from high to low temperatures. This is a function of T/TK , and its functional form is found to be consistent with the result of Wilson, insofar as they can be compared. This approach is mathematically powerful, and we may apply it to the case with a magnetic field, the case with S > 1/2, and the Anderson model. However, the focus of our attention in this chapter will be to discuss the initial analysis of Andrei (Andrei, 1980; Andrei and Lowenstein, 1981; Andrei et al. , 1983) and Wiegmann (Weigmann, 1981; Filyov et al. , 1981). A one-dimensional model At first, let us consider the movement of conduction electrons on a onedimensional line. Even in the three-dimensional case, if the interaction is δ function-like, only s -wave scattering arises.
Abstract We studied the quarter‐filled electron–hole Hubbard model of one dimension using the cluster perturbation method. We found that the ground states of this system are always insulating as long as the electron–hole attractive interaction has a finite value. The calculated density of states for the electron and hole is significantly renormalized by the interaction, and show energy gaps at the Fermi energy. These gaps are induced by the excitonic mechanism at U > U ′ and by the biexcitonic one at U < U ′, where U (> 0) denotes the electron–electron and hole–hole repulsive interaction, and U ′(< 0) denotes the electron–hole attractive interaction. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The Dynamic Hubbard Model (DHM) has been introduced as a framework for the electron-hole asymmetry observed in materials like high-temperature superconductors. In this study, we aim to understand the intricate dynamics of hole interactions, particularly focusing on the competition between on-site repulsion and hole-lattice coupling. Our results reveal a striking feature-an effective nearest-neighbor attraction between holes, even in the presence of the on-site repulsion typical of Mott insulators. Notably, the on-site repulsion not only coexists but also enhances the nearest-neighbor coupling. Our exploration of the DHM unravels unexpected and significant characteristics, enriching our understanding of hole interactions in correlated electron systems. The model's capacity to capture both on-site repulsion and effective nearest-neighbor attraction offers a valuable perspective.