Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. We focus here on the ability to move or “shuttle” electrons between the donors and the Si surface using an external electric field. This is an essential element of donor‐based quantum computer architectures. In particular, this shuttling time must be much shorter than the spin dephasing time ∼ 1 ms in bulk Si. Application of suitable electrostatic potentials at surface electrodes would drag the electron from and to the donor allowing the manipulation of the electron‐donor coupling. We investigate the precise extent to which a donor bound electron in the bulk (a few tens of nanometers from the interface) can be manipulated between the donor‐bound state and a surface‐bound state (within a few nanometers of the interface) by suitably tuning an external electric field applied perpendicular to the interface.
Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. We focus here on the ability to move or “shuttle” electrons between the donors and the Si surface using an external electric field. This is an essential element of donor‐based quantum computer architectures. In particular, this shuttling time must be much shorter than the spin dephasing time ∼ 1 ms in bulk Si. Application of suitable electrostatic potentials at surface electrodes would drag the electron from and to the donor allowing the manipulation of the electron‐donor coupling. We investigate the precise extent to which a donor bound electron in the bulk (a few tens of nanometers from the interface) can be manipulated between the donor‐bound state and a surface‐bound state (within a few nanometers of the interface) by suitably tuning an external electric field applied perpendicular to the interface.
Gate control of donor electrons near interfaces is a generic ingredient of donor-based quantum computing. Here, we address the question: how is the phonon-assisted qubit relaxation time T 1 affected as the electron is shuttled between the donor and the interface? We focus on the example of the 'flip-flop qubit' (Tosi et al arXiv:1509.08538v1), defined as a combination of the nuclear and electronic states of a phosphorus donor in silicon, promising fast electrical control and long dephasing times when the electron is halfway between the donor and the interface. We theoretically describe orbital relaxation, flip-flop relaxation, and electron spin relaxation. We estimate that the flip-flop qubit relaxation time can be of the order of 100 μs, 8 orders of magnitude shorter than the value for an on-donor electron in bulk silicon, and a few orders of magnitude shorter (longer) than the predicted inhomogeneous dephasing time (gate times). All three relaxation processes are boosted by (i) the nontrivial valley structure of the electron-phonon interaction, and (ii) the different valley compositions of the involved electronic states.
A scaled quantum computer with donor spins in silicon would benefit from a viable semiconductor framework and a strong inherent decoupling of the qubits from the noisy environment. Coupling neighboring spins via the natural exchange interaction according to current designs requires gate control structures with extremely small length scales. We present a silicon architecture where bismuth donors with long coherence times are coupled to electrons that can shuttle between adjacent quantum dots, thus relaxing the pitch requirements and allowing space between donors for classical control devices. An adiabatic SWAP operation within each donor/dot pair solves the scalability issues intrinsic to exchange-based two-qubit gates, as it does not rely on subnanometer precision in donor placement and is robust against noise in the control fields. We use this SWAP together with well established global microwave Rabi pulses and parallel electron shuttling to construct a surface code that needs minimal, feasible local control.
An architecture for a quantum computer is presented in which spins associated with donors in silicon function as qubits. Quantum operations on the spins are performed using a combination of voltages applied to gates adjacent to the spins and radio frequency magnetic fields applied resonant with spin transitions. Initialization and measurement of electron spins is made by electrostatic probing of a two electron system, whose orbital configuration must depend on the spin states of the electrons because of the Pauli Principle. Specific devices will be discussed which perform all the necessary operations for quantum computing, with an emphasis placed on a qualitative presentation of the principles underlying their operation. The likely impediments to achieving large-scale quantum computation using this architecture will be addressed: the computer must operate at extremely low temperature, must be fabricated from devices built with near atomic precision, and will require extremely accurate gating operations in order to perform quantum logic. Refinements to the computer architecture will be presented which could remedy each of these deficiencies. I will conclude by discussing a possible specific realization of the computer using Si/SixGe1–x heterostructures into which donors are deposited using a low energy focused ion beam.
Donors in silicon, which combine an electron and nuclear spin, are some of the most promising candidates for quantum information. The electron spin has been proposed as a register with fast manipulation and the nuclear spin as a memory with long coherence times. However, this division reduces the complexity of the donor system, in particular behaviors emerging from their interaction. In natural silicon, there is also the presence of 29Si nuclear spins in the donor environment; though they are generally seen as a source of decoherence, they are quantum systems that can be investigated too. The main subject of this thesis is the study of the interactions between these various spins, using different methods to probe and control them. I first concentrate on the coupling between the donor and the 29Si spins. This coupling can be perturbed by the application of dynamical decoupling on the donor electron spin, whose evolution can be made sensitive to the number of 29Si spins interacting together. I then propose an error correction scheme using the donor and 29Si spins, showing key requirements such as coherence times and methods for manipulation and initialization. Secondly, I focus on the donor itself, in a regime where the hyperfine and Zeeman couplings compete with each other. Here, the spin transitions can have different sensitivities to the magnetic environment, and can even be suppressed to first order, resulting in coherence times up to seconds with electron spin-like manipulation times. Controlling this sensitivity was also used to probe the effect of the donor on the 29Si spin bath evolution. Finally, I use electric fields to modulate the hyperfine coupling within the donor. I first characterize the spins’ sensitivity to the electric field, and then demonstrate electrical switching of the nuclear spin response to an external magnetic excitation.
Quantum computation holds the promise of efficient solutions to currently formidable problems. A prospective technology is that of computing using quantum states, which may dramatically speed up or otherwise reduce the complexity for the solution of some hard problems. Of the many different schemes proposed, shallow substitutional donors in Silicon hold great attractiveness for the detailed study of the medium, high industrial capacity, and ubiquity of raw materials. We develop control over the quantum orbital and spin states of bound electrons using the THz ultrafast laser FELIX. \nManipulation of orbital states is studied using interferometric methods to produce Ramsey fringes, read out using optical and electrical methods. Contactless electrical measurement of free charge carriers is implemented, and the details of its advantages and limitations are explored. Both types of readout are used to demonstrate a coherent 3-level orbital manipulation, otherwise known as a quantum beat. The work constitutes a nontrivial control over the spatial distribution of the wavefunction of the atom which may enable error correcting surface code implementations. \nSpin dynamics are then explored in the presence of FELIX using donor-bound exciton techniques, which allow a sensitive and fast control over the electron spin states. The implementation is used to probe whether orbital excitation has a strong effect upon the spin states of the donor electrons, and it is shown that any modification of the spin is negligible. Experimental measurements of optically gated spin-exchange coupling are enabled by this methodology, and a roadmap to future implementation is discussed in the context of the present work. \nOverall, the work advances the state of spin and orbital control of neutral donor states for the purposes of optically gated quantum computing. Combined spin and orbital manipulations are now possible in the system, which will allow a more advanced implementation of quantum computation using orbital states than was previously possible.
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.