Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:1602.03691 · Nanotechnology

Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon

Péter Boross, Gábor Széchenyi, András Pályi

Published Jun 23, 2016• 20 citations
arXivHTMLPDF

Abstract

Gate control of donor electrons near interfaces is a generic ingredient of donor-based quantum computing. Here, we address the question: how is the phonon-assisted qubit relaxation time T 1 affected as the electron is shuttled between the donor and the interface? We focus on the example of the 'flip-flop qubit' (Tosi et al arXiv:1509.08538v1), defined as a combination of the nuclear and electronic states of a phosphorus donor in silicon, promising fast electrical control and long dephasing times when the electron is halfway between the donor and the interface. We theoretically describe orbital relaxation, flip-flop relaxation, and electron spin relaxation. We estimate that the flip-flop qubit relaxation time can be of the order of 100 μs, 8 orders of magnitude shorter than the value for an on-donor electron in bulk silicon, and a few orders of magnitude shorter (longer) than the predicted inhomogeneous dephasing time (gate times). All three relaxation processes are boosted by (i) the nontrivial valley structure of the electron-phonon interaction, and (ii) the different valley compositions of the involved electronic states.

DOI
10.1088/0957-4484/27/31/314002

Related papers

Fast high-fidelity single-qubit gates for flip-flop qubits in silicon

F. A. Calderon-Vargas, Edwin Barnes, Sophia E. Economou

Flip-flop qubits, encoded in the antiparallel spin states of electron and nuclear spins in phosphorus donors in silicon, are promising for quantum processors due to their long coherence times, long-range two-qubit coupling, and CMOS compatibility. However, the large Hilbert space complicates understanding and controlling the dynamics. In this work, the authors use sophisticated techniques to derive effective flip-flop qubit Hamiltonians and design optimal control pulses that implement high-fidelity single-qubit gates that are much faster and more robust than previous proposals.

arXiv:2101.11592•Physical review. B./Physical review. B•Oct 10, 2022•10 citations

Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory

Benjamin Joecker, Andrew Baczewski, John King Gamble +3 more

Abstract Donor spins in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange interaction. To aid the efficient design of scalable donor-based quantum processors, we model the two-electron wave function using a full configuration interaction method within a multi-valley effective mass theory. We exploit the high computational efficiency of our code to investigate the exchange interaction, valley population, and electron densities for two phosphorus donors in a wide range of lattice positions, orientations, and as a function of applied electric fields. The outcomes are visualized with interactive images where donor positions can be swept while watching the valley and orbital components evolve accordingly. Our results provide a physically intuitive and quantitatively accurate understanding of the placement and tuning criteria necessary to achieve high-fidelity two-qubit gates with donors in silicon.

arXiv:2012.06293•New Journal of Physics•Jun 11, 2021•20 citations

Quantum control of donor-bound electrons at the Si-SiO2 interface

Belita Koiller, M. J. Calderón, Xuedong Hu +1 more

Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. We focus here on the ability to move or “shuttle” electrons between the donors and the Si surface using an external electric field. This is an essential element of donor‐based quantum computer architectures. In particular, this shuttling time must be much shorter than the spin dephasing time ∼ 1 ms in bulk Si. Application of suitable electrostatic potentials at surface electrodes would drag the electron from and to the donor allowing the manipulation of the electron‐donor coupling. We investigate the precise extent to which a donor bound electron in the bulk (a few tens of nanometers from the interface) can be manipulated between the donor‐bound state and a surface‐bound state (within a few nanometers of the interface) by suitably tuning an external electric field applied perpendicular to the interface.

AIP conference proceedings•Jan 1, 2007•0 citations

Silicon quantum processor with robust long-distance qubit couplings

G. Tosi, Fahd A. Mohiyaddin, Vivien Schmitt +4 more

Practical quantum computers require a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and leaves ample space for the routing of interconnects and readout devices. We introduce the flip-flop qubit, a combination of the electron-nuclear spin states of a phosphorus donor that can be controlled by microwave electric fields. Two-qubit gates exploit a second-order electric dipole-dipole interaction, allowing selective coupling beyond the nearest-neighbor, at separations of hundreds of nanometers, while microwave resonators can extend the entanglement to macroscopic distances. We predict gate fidelities within fault-tolerance thresholds using realistic noise models. This design provides a realizable blueprint for scalable spin-based quantum computers in silicon.Quantum computers will require a large network of coherent qubits, connected in a noise-resilient way. Tosi et al. present a design for a quantum processor based on electron-nuclear spins in silicon, with electrical control and coupling schemes that simplify qubit fabrication and operation.

arXiv:1509.08538•Nature Communications•Aug 31, 2017•170 citations

Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots

Elena Ferraro, Marco Fanciulli, Marco De Michielis

We study theoretically the phonon-induced relaxation and decoherence processes in the hybrid qubit in silicon. A hybrid qubit behaves as a charge qubit when the detuning is close to zero and as a spin qubit for large detuning values. It is realized starting from an electrostatically defined double quantum dot where three electrons are confined and manipulated through only electrical tuning. By employing a three-level effective model for the qubit and describing the environment bath as a series of harmonic oscillators in the thermal equilibrium states, we extract the relaxation and decoherence times as a function of the bath spectral density and of the bath temperature using the Bloch-Redfield theory. For Si quantum dots the energy dispersion is strongly affected by the physics of the valley, i.e., the conduction band minima, so we also included the contribution of the valley excitations in our analysis. Our results offer fundamental information on the system decoherence properties when the unavoidable interaction with the environment is included and temperature effects are considered.

arXiv:1904.01852•Physical review. B./Physical review. B•Jul 19, 2019•7 citations

Fast noise-resistant control of donor nuclear spin qubits in silicon

James Simon, F. A. Calderon-Vargas, Edwin Barnes +1 more

A high degree of controllability and long coherence time make the nuclear spin of a phosphorus donor in isotopically purified silicon a promising candidate for a quantum bit. However, long-distance two-qubit coupling and fast, robust gates remain outstanding challenges for these systems. Here, following recent proposals for long-distance coupling via dipole-dipole interactions, we present a simple method to implement fast, high-fidelity arbitrary single- and two-qubit gates in the absence of charge noise. Moreover, we provide a method to make the single-qubit gates robust to moderate levels of charge noise to well within an error bound of ${10}^{\ensuremath{-}3}$.

arXiv:2001.10029•Physical review. B./Physical review. B•May 18, 2020•6 citations
Gate control of donor electrons near interfaces is a generic ingredient of donor-based quantum computing. Here, we address the question: how is the phonon-assisted qubit relaxation time T 1 affected as the electron is shuttled between the donor and the interface? We focus on the example of the 'flip-flop qubit' (Tosi et al arXiv:1509.08538v1), defined as a combination of the nuclear and electronic states of a phosphorus donor in silicon, promising fast electrical control and long dephasing times when the electron is halfway between the donor and the interface. We theoretically describe orbital relaxation, flip-flop relaxation, and electron spin relaxation. We estimate that the flip-flop qubit relaxation time can be of the order of 100 μs, 8 orders of magnitude shorter than the value for an on-donor electron in bulk silicon, and a few orders of magnitude shorter (longer) than the predicted inhomogeneous dephasing time (gate times). All three relaxation processes are boosted by (i) the nontrivial valley structure of the electron-phonon interaction, and (ii) the different valley compositions of the involved electronic states.
Flip-flop qubits, encoded in the antiparallel spin states of electron and nuclear spins in phosphorus donors in silicon, are promising for quantum processors due to their long coherence times, long-range two-qubit coupling, and CMOS compatibility. However, the large Hilbert space complicates understanding and controlling the dynamics. In this work, the authors use sophisticated techniques to derive effective flip-flop qubit Hamiltonians and design optimal control pulses that implement high-fidelity single-qubit gates that are much faster and more robust than previous proposals.
Abstract Donor spins in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange interaction. To aid the efficient design of scalable donor-based quantum processors, we model the two-electron wave function using a full configuration interaction method within a multi-valley effective mass theory. We exploit the high computational efficiency of our code to investigate the exchange interaction, valley population, and electron densities for two phosphorus donors in a wide range of lattice positions, orientations, and as a function of applied electric fields. The outcomes are visualized with interactive images where donor positions can be swept while watching the valley and orbital components evolve accordingly. Our results provide a physically intuitive and quantitatively accurate understanding of the placement and tuning criteria necessary to achieve high-fidelity two-qubit gates with donors in silicon.
Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. We focus here on the ability to move or “shuttle” electrons between the donors and the Si surface using an external electric field. This is an essential element of donor‐based quantum computer architectures. In particular, this shuttling time must be much shorter than the spin dephasing time ∼ 1 ms in bulk Si. Application of suitable electrostatic potentials at surface electrodes would drag the electron from and to the donor allowing the manipulation of the electron‐donor coupling. We investigate the precise extent to which a donor bound electron in the bulk (a few tens of nanometers from the interface) can be manipulated between the donor‐bound state and a surface‐bound state (within a few nanometers of the interface) by suitably tuning an external electric field applied perpendicular to the interface.
Practical quantum computers require a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and leaves ample space for the routing of interconnects and readout devices. We introduce the flip-flop qubit, a combination of the electron-nuclear spin states of a phosphorus donor that can be controlled by microwave electric fields. Two-qubit gates exploit a second-order electric dipole-dipole interaction, allowing selective coupling beyond the nearest-neighbor, at separations of hundreds of nanometers, while microwave resonators can extend the entanglement to macroscopic distances. We predict gate fidelities within fault-tolerance thresholds using realistic noise models. This design provides a realizable blueprint for scalable spin-based quantum computers in silicon.Quantum computers will require a large network of coherent qubits, connected in a noise-resilient way. Tosi et al. present a design for a quantum processor based on electron-nuclear spins in silicon, with electrical control and coupling schemes that simplify qubit fabrication and operation.
We study theoretically the phonon-induced relaxation and decoherence processes in the hybrid qubit in silicon. A hybrid qubit behaves as a charge qubit when the detuning is close to zero and as a spin qubit for large detuning values. It is realized starting from an electrostatically defined double quantum dot where three electrons are confined and manipulated through only electrical tuning. By employing a three-level effective model for the qubit and describing the environment bath as a series of harmonic oscillators in the thermal equilibrium states, we extract the relaxation and decoherence times as a function of the bath spectral density and of the bath temperature using the Bloch-Redfield theory. For Si quantum dots the energy dispersion is strongly affected by the physics of the valley, i.e., the conduction band minima, so we also included the contribution of the valley excitations in our analysis. Our results offer fundamental information on the system decoherence properties when the unavoidable interaction with the environment is included and temperature effects are considered.
A high degree of controllability and long coherence time make the nuclear spin of a phosphorus donor in isotopically purified silicon a promising candidate for a quantum bit. However, long-distance two-qubit coupling and fast, robust gates remain outstanding challenges for these systems. Here, following recent proposals for long-distance coupling via dipole-dipole interactions, we present a simple method to implement fast, high-fidelity arbitrary single- and two-qubit gates in the absence of charge noise. Moreover, we provide a method to make the single-qubit gates robust to moderate levels of charge noise to well within an error bound of ${10}^{\ensuremath{-}3}$.