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Applied Physics Letters

Localized laser trimming of critical current in niobium based Josephson devices

C. Granata, Antonio Vettoliere, Lucia Petti, Massimo Rippa, B. Ruggiero, Pasquale Mormile, M. Russo

Published Jun 4, 2007• 12 citations
Publisher

Abstract

A thermal annealing technique for Nb∕Al–AlOx∕Nb Josephson devices based on laser heating is presented. This technique allows “locally” modifying the Josephson critical current density, which is not possible using standard procedures based on oven or hot plate heating. In fact, the heating of a single circuit element with a good spatial resolution is possible. At room temperature, the selected junction is exposed to a focused Ar+ laser beam aligned by an optical system. A thermographic imaging allows controlling the temperature distribution on the whole chip. Experimental results on high quality Josephson junction measured in liquid helium have shown a continuous reduction of the critical current density up to about 40%. Neighboring junctions have not exhibited any measurable change ensuring the capability to locally modify the Josephson critical current density. As first application, the present technique has been employed to recover noisy dc superconducting quantum interference device magnetometers with nonoptimal critical current values obtaining a reduction of the spectrum density of magnetic field noise from about 30to2.5fT∕Hz1∕2.

DOI
10.1063/1.2746060

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A thermal annealing technique for Nb∕Al–AlOx∕Nb Josephson devices based on laser heating is presented. This technique allows “locally” modifying the Josephson critical current density, which is not possible using standard procedures based on oven or hot plate heating. In fact, the heating of a single circuit element with a good spatial resolution is possible. At room temperature, the selected junction is exposed to a focused Ar+ laser beam aligned by an optical system. A thermographic imaging allows controlling the temperature distribution on the whole chip. Experimental results on high quality Josephson junction measured in liquid helium have shown a continuous reduction of the critical current density up to about 40%. Neighboring junctions have not exhibited any measurable change ensuring the capability to locally modify the Josephson critical current density. As first application, the present technique has been employed to recover noisy dc superconducting quantum interference device magnetometers with nonoptimal critical current values obtaining a reduction of the spectrum density of magnetic field noise from about 30to2.5fT∕Hz1∕2.
Results about induced spatial modulation of critical current density in niobium based Josephson devices by a selective radiation heating are presented. The localized heating inside a single circuit element with a good spatial resolution (less than 1 μm) is made possible by depositing a carbon film on the desired region exploiting the larger absorbance coefficient of carbon (close to 1) with respect to niobium (about 0.2). Measurements of critical current as a function of the external magnetic field on high quality Josephson junctions at T = 4.2 K evidenced that the critical current density was changed only in the absorber covered region, leaving unchanged the critical current density outside that region and ensuring the capability to locally modify the Josephson critical current density. The experimental data have been compared with theoretical predictions obtained by using a suitable junction barrier model based on step-like barrier shape. Such results are very interesting in view of applications in quantum computing, Majorana fermions detection, and superconducting magnetic sensors.
In the present article, we present the experimental results concerning the fine-tuning and optimization of superconducting quantum interference device (SQUID) parameters by thermal annealing. This treatment allows for the modification of the parameters in order to meet a specific application or to adjust the device parameters to prevent the increase of magnetic field noise and work instability conditions due to a different critical current with respect to the design value. In particular, we report the sensor critical current, the voltage-flux (V-Φ) characteristics and the spectral density of the magnetic field of SQUID magnetometers for different annealing temperatures. The measurements demonstrate that it is possible to achieve a fine control of the most important device parameters. In particular, we show that thermal annealing allows for the reduction of SQUID noise by more than a factor of 5 and makes the device working operations very stable. These results are very useful in view of quantum technology applications related to superconducting quantum computing where the correct functioning of the quantum bit depends on the fine control of the superconducting quantum device parameters and selectable annealing is possible by using a suitable laser as a thermal source.
The effect of a focused laser beam on the critical junction current of a one-dimensional Josephson tunnel junction is analyzed for both short and long junctions. The laser heating locally alters the critical current density and London penetration depth, giving rise to a change in the critical current which is proportional to the local current density of the irradiated region. In addition, the relative pair phase is modified in a nonlocal manner which gives rise to an additional contribution to the change in the critical current of the junction. For short junctions, this nonlocal phase modification contributes two parts to the junction critical current. One has the same spatial dependence as that of the current distribution itself, while the other is independent of the position of the laser beam. This latter contribution depends upon the applied magnetic field and is a signature of the nonlocal effect. For a long junction, the nonlocal phase contribution to the change in the junction critical current can give rise to dramatic effects when the applied magnetic field is less than a critical value Hc{H}_{c}Hc​=\ensuremath{\Elzxh}c/(2ed${\ensuremath{\lambda}}_{J}$). In this case the spatial dependence of the laser-induced change in the critical current can be qualitatively different from the unperturbed current distribution.
We have developed a scheme for high resolution measurements of the switching current distribution of a current-biased Josephson tunnel junction using a timing technique. In the measurement setup digital control and read-out electronics are galvanically isolated from the analog sample bias electronics by an optical fiber link. We have successfully used this technique to investigate thermal activation and macroscopic quantum tunneling of the phase in a high-quality 5×5 μm2 Nb–Al/AlOx–Nb Josephson tunnel junction with a critical current of Ic≈325 μA. At temperatures above the cross over temperature of T★≈280 mK the escape is dominated by thermal activation. Due to the high quality factor of the junction (Q≈95), the escape temperature is noticeably affected by the thermal prefactor. At temperatures below T★, the value of which agrees well with the theoretical predictions, the escape of the phase by quantum mechanical tunneling is observed. The presented technique can be employed to characterize current-biased Josephson tunnel junctions for applications in quantum information processing.
We report on the fabrication and millikelvin char acterization of Nb/Al–AlOx/Nb Josephson junctions directly de posited on X-cut LiNbO3 substrates. Motivated by the strong electro-optic and piezoelectric properties of LiNbO3, such devices are of interest for future hybrid superconducting–electro-optic architectures. The junctions were fabricated using standard processes involving DC magnetron sputtering followed by controlled thermal oxidation of the aluminum layer to form an AlOx tunnel barrier with reproducible junction areas. Insulation of the junctions was achieved by anodization and SiOx deposition. Electrical measurements performed at 30 mK reveal high-quality Josephson tunnel junction behavior with a critical current density ofJc= 70 A/cm2and a characteristic voltage reaching values up toVm= 286 mV. Differential conductance measurements exhibit pronounced quasiparticle peaks corresponding to a sum gap energy of 2Δ = (2.73 ± 0.05) meV, confirming the good quality of the Nb electrodes. Magnetic-field-dependent measure ments yield a Josephson penetration depth of λJ= 45 μm, confirming operation in the small-junction regime, with deviations from the ideal Josephson interference pattern attributed to non-uniform current distribution across the junction area. Compared to our previous characterization at 4.2 K, this work demonstrates reliable Josephson junction operation on LiNbO3 at dilution-refrigerator temperatures relevant for quantum circuits, supporting the suitability of lithium niobate as a promising substrate for future hybrid superconducting–electro-optic device implementations.
An experimental investigation of the critical current noise in underdamped niobium based Josephson devices [junctions and Superconducting Quantum Interference Device (SQUID)] by a technique based on the switching current measurements is reported. By sweeping the junction with a current ramp we measure the critical current switching using the standard time of flight technique and analyze the data to extract the current noise. Measurements on Josephson junctions having an area ranging from (4 \ifmmode\times\else\texttimes\fi{} 4) to (40 \ifmmode\times\else\texttimes\fi{} 40) \ensuremath{\mu}m2{}^{2}2 in the temperature range from 4.2 to 1.2 K are reported. The experimental results show a linear behavior of the current white noise from both the junction area and the temperature. These measurements provide very useful information about the intrinsic noise of Josephson devices involving SQUIDs and qubits.