Spectral hole burning in spectra of self‐organized InAs/GaAs quantum dots is demonstrated. Resonant charging with holes and for the first time with electrons is observed as saturation in the absorption spectra. This enables investigations on longer time scales than the lifetime of radiative recombination, in view of quantum dot memory devices or spin storage. Varying temperatures and excitation densities reveal the character of carrier escape mechanisms.

AIP conference proceedingsJan 1, 20050 citations

Observation of spectral hole burning in photocurrentspectrum of InAs self-assembled quantum dots embedded in pin diode

Yoshihiro Sugiyama, Yoshihiro Nakata, Shunichi Muto +4 more

The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.

Electronics LettersSep 11, 199714 citations