Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical review. B, Condensed matter

Noise-affectedI-Vcurves in small hysteretic Josephson junctions

Richard L. Kautz, John M. Martinis

Published Dec 1, 1990• 154 citations
Publisher

Abstract

We investigate the noise-affected I-V curves of small-area Josephson junctions through experiment, simulation, and theory. In particular, we consider I-V curves in which two different states of finite voltage coexist at the same dc bias: a high-voltage state that corresponds to the usual quasiparticle branch and a low-voltage state that is characterized by thermally activated phase diffusion. The observed hysteresis between the phase-diffusion and quasiparticle branches cannot be explained within the context of the simple resistively and capacitively shunted junction (RCSJ) model but is explained by extended models in which the damping increases with frequency. Frequency-dependent damping is shown to produce a qualitative change in the attractors of the noise-free system which allows the two voltage states to be simultaneously stable. This picture is confirmed by Monte Carlo simulations which accurately reproduce the experimental I-V curves of two different samples over a wide range of temperatures. In addition we develop analytic expressions for three key parameters of the I-V curve of junctions displaying hysteresis between the phase-diffusion and quasiparticle branches: the initial slope of the phase-diffusion branch, the bias level at which the junction switches from the phase-diffusion branch to the quasiparticle branch, and the bias level at which it returns to the phase-diffusion branch.

DOI
10.1103/physrevb.42.9903

Related papers

Classical phase diffusion in small hysteretic Josephson junctions

John M. Martinis, Richard L. Kautz

The existence of classical phase diffusion in hysteretic junctions is demonstrated by quantitative agreement between experimental and simulated I-V curves. The simulations are based on a circuit that accurately models both the junction and its external shunting impedance at microwave frequencies. We show that the bias current at which the junction switches from the phase diffusion state to the voltage state is sensitive to dissipation at microwave frequencies.

Physical Review Letters•Oct 2, 1989•141 citations

Incoherent microwave-induced resistive states of small Josephson junctions

Yuri Koval, M. V. Fistul, Alexey Vladimirovich Ustinov

We report an experimental and theoretical study of low-voltage resistive states observed in small tunnel Josephson junctions subject to microwave radiation. The observed features result from Shapiro steps in the current–voltage characteristics and appear when both thermal fluctuations and high frequency dissipation are strong. Without microwave radiation, Josephson junctions have a phase diffusion supercurrent branch characterized by a finite small resistance and hysteretic switching to a higher voltage range under these conditions. When microwave radiation is applied, three different types of resistive states are observed in the current-voltage characteristics. First, a phase diffusion branch steadily evolves and its maximum voltage Vm increases with the microwave power. Another interesting observed feature is a zero-crossing resistive state characterized by a negative resistance. Finally, we find that the low-voltage resistive state can split into numerous hysteretic fine branches resembling incoherent Shapiro-like steps. The appearance of a particular resistive state depends on the interrelations among the Josephson energy EJ, the energy kBT of thermal fluctuations, and the microwave frequency ω. A theoretical analysis based on incoherent multi-photon absorption by a junction biased in the Josephson phase diffusion regime is in good agreement with the experimental observations.

Low Temperature Physics•Oct 1, 2010•2 citations

Response of Highly Damped Josephson Junctions to External, Low-Frequency Noise Currents

Helmut Kanter, F. L. Vernon

The dc characteristics of superconducting point-contact junctions subjected to external noise currents are measured under the condition that the noise-frequency spectrum is below the Josephson frequency. It is shown that the curves are in agreement with a model based on modulation of the noise-free dc characteristic. Although in the low-bias-voltage region the shape of the curves is qualitatively similar to previous theoretical predictions for the case of high-frequency noise, for higher voltages the shapes are different. Quantitative differences exist over the whole range of bias voltage.

Physical review. B, Solid state•Dec 1, 1970•15 citations

I-Vcharacteristics of microwave-driven Josephson junctions in the low-frequency and high-damping regime

C. Vanneste, C. C., Karen H. Brown +10 more

Experimental I-V curves of microwave-driven Josephson tunnel junctions with resistive shunts are reported. The results are in very good agreement with numerical calculations using the resistively shunted junction model. In the low-frequency regime there are three distinct regions in the I-V curves and two different types of Shapiro steps. It is demonstrated that the overall shape of the I-V curves can be explained by using an adiabatic interpretation of the junction response. The two different types of Shapiro steps are related to a compensation effect between dc and rf bias currents.

Physical review. B, Condensed matter•Apr 1, 1985•22 citations

Current-voltage characteristics of nanoampere Josephson junctions

Ronald H. Ono, Michael W. Cromar, Richard L. Kautz +3 more

We have studied the current-voltage characteristics of small area tunnel junctions at temperatures below 1 K. The junctions were made in an edge geometry with a Nb base electrode and had areas less than .05 μm2and critical currents in the nA range. Although the measured I-V characteristics resemble those of ordinary hysteretic junctions, the supposed zero-voltage portion of the curve proved to have a finite slope and to deviate from zero voltage. For these junctions it is apparently possible for occasional 2π phase slips to occur without switching to the usual voltage state. This behavior can be explained either by macroscopic quantum tunneling or by a model in which the effective shunt conductance of the junction is frequency dependent.

IEEE Transactions on Magnetics•Mar 1, 1987•32 citations

Quantum fluctuations in a current-biased Josephson junction of small capacitance

A. Tagliacozzo, F. Ventriglia, Peter Apell

Quantum fluctuations of the charge at a current-biased Josephson junction and of the Josephson current couple to the quasiparticle tunneling when the system is at equilibrium in the zero-voltage state. The effect of reducing the capacitance of the junction is studied by means of a model Hamiltonian. When this becomes smaller, charge fluctuations are reduced, but the effective dissipation is also lowered so that the junction displays an underdamped behavior. The Josephson branch is shifted at the voltage e/2C because of charging due to the quasiparticles. A path-integral formulation of the model leads to a high dynamical subgap resistance at I\ensuremath{\rightarrow}0, as recently found experimentally.

Physical review. B, Condensed matter•Dec 1, 1989•5 citations
We investigate the noise-affected I-V curves of small-area Josephson junctions through experiment, simulation, and theory. In particular, we consider I-V curves in which two different states of finite voltage coexist at the same dc bias: a high-voltage state that corresponds to the usual quasiparticle branch and a low-voltage state that is characterized by thermally activated phase diffusion. The observed hysteresis between the phase-diffusion and quasiparticle branches cannot be explained within the context of the simple resistively and capacitively shunted junction (RCSJ) model but is explained by extended models in which the damping increases with frequency. Frequency-dependent damping is shown to produce a qualitative change in the attractors of the noise-free system which allows the two voltage states to be simultaneously stable. This picture is confirmed by Monte Carlo simulations which accurately reproduce the experimental I-V curves of two different samples over a wide range of temperatures. In addition we develop analytic expressions for three key parameters of the I-V curve of junctions displaying hysteresis between the phase-diffusion and quasiparticle branches: the initial slope of the phase-diffusion branch, the bias level at which the junction switches from the phase-diffusion branch to the quasiparticle branch, and the bias level at which it returns to the phase-diffusion branch.
We report an experimental and theoretical study of low-voltage resistive states observed in small tunnel Josephson junctions subject to microwave radiation. The observed features result from Shapiro steps in the current–voltage characteristics and appear when both thermal fluctuations and high frequency dissipation are strong. Without microwave radiation, Josephson junctions have a phase diffusion supercurrent branch characterized by a finite small resistance and hysteretic switching to a higher voltage range under these conditions. When microwave radiation is applied, three different types of resistive states are observed in the current-voltage characteristics. First, a phase diffusion branch steadily evolves and its maximum voltage Vm increases with the microwave power. Another interesting observed feature is a zero-crossing resistive state characterized by a negative resistance. Finally, we find that the low-voltage resistive state can split into numerous hysteretic fine branches resembling incoherent Shapiro-like steps. The appearance of a particular resistive state depends on the interrelations among the Josephson energy EJ, the energy kBT of thermal fluctuations, and the microwave frequency ω. A theoretical analysis based on incoherent multi-photon absorption by a junction biased in the Josephson phase diffusion regime is in good agreement with the experimental observations.
The dc characteristics of superconducting point-contact junctions subjected to external noise currents are measured under the condition that the noise-frequency spectrum is below the Josephson frequency. It is shown that the curves are in agreement with a model based on modulation of the noise-free dc characteristic. Although in the low-bias-voltage region the shape of the curves is qualitatively similar to previous theoretical predictions for the case of high-frequency noise, for higher voltages the shapes are different. Quantitative differences exist over the whole range of bias voltage.
Experimental I-V curves of microwave-driven Josephson tunnel junctions with resistive shunts are reported. The results are in very good agreement with numerical calculations using the resistively shunted junction model. In the low-frequency regime there are three distinct regions in the I-V curves and two different types of Shapiro steps. It is demonstrated that the overall shape of the I-V curves can be explained by using an adiabatic interpretation of the junction response. The two different types of Shapiro steps are related to a compensation effect between dc and rf bias currents.
We have studied the current-voltage characteristics of small area tunnel junctions at temperatures below 1 K. The junctions were made in an edge geometry with a Nb base electrode and had areas less than .05 μm2and critical currents in the nA range. Although the measured I-V characteristics resemble those of ordinary hysteretic junctions, the supposed zero-voltage portion of the curve proved to have a finite slope and to deviate from zero voltage. For these junctions it is apparently possible for occasional 2π phase slips to occur without switching to the usual voltage state. This behavior can be explained either by macroscopic quantum tunneling or by a model in which the effective shunt conductance of the junction is frequency dependent.
Quantum fluctuations of the charge at a current-biased Josephson junction and of the Josephson current couple to the quasiparticle tunneling when the system is at equilibrium in the zero-voltage state. The effect of reducing the capacitance of the junction is studied by means of a model Hamiltonian. When this becomes smaller, charge fluctuations are reduced, but the effective dissipation is also lowered so that the junction displays an underdamped behavior. The Josephson branch is shifted at the voltage e/2C because of charging due to the quasiparticles. A path-integral formulation of the model leads to a high dynamical subgap resistance at I\ensuremath{\rightarrow}0, as recently found experimentally.