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Physical review. B, Solid state

Response of Highly Damped Josephson Junctions to External, Low-Frequency Noise Currents

Helmut Kanter, F. L. Vernon

Published Dec 1, 1970• 15 citations
Publisher

Abstract

The dc characteristics of superconducting point-contact junctions subjected to external noise currents are measured under the condition that the noise-frequency spectrum is below the Josephson frequency. It is shown that the curves are in agreement with a model based on modulation of the noise-free dc characteristic. Although in the low-bias-voltage region the shape of the curves is qualitatively similar to previous theoretical predictions for the case of high-frequency noise, for higher voltages the shapes are different. Quantitative differences exist over the whole range of bias voltage.

DOI
10.1103/physrevb.2.4694

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Revue de Physique Appliquée•Jan 1, 1974•3 citations
The dc characteristics of superconducting point-contact junctions subjected to external noise currents are measured under the condition that the noise-frequency spectrum is below the Josephson frequency. It is shown that the curves are in agreement with a model based on modulation of the noise-free dc characteristic. Although in the low-bias-voltage region the shape of the curves is qualitatively similar to previous theoretical predictions for the case of high-frequency noise, for higher voltages the shapes are different. Quantitative differences exist over the whole range of bias voltage.
For a current-driven Josephson junction shunted by an Ohmic resistance, the dc voltage response and impedance to external high-frequency currents is calculated with a second-order perturbation method based on the unperturbed solution for the time evolution of the voltage as given by Aslamazov and Larkin. The response is proportional to signal power and has three characteristic-frequency regions depending on whether the internal self-generated Josephson frequency, ω0, is larger than, equal to, or smaller than the signal frequency, ω. For ω0< or >ω the response could be expressed by easily observable parameters of the dc voltage-current characteristics. This permits comparison of the predictions with experimental results obtained on point-contact junctions whose dc characteristics were only approximately represented by the simple model chosen for analysis. For ω0≪ω the response is found to be proportional to (i) the slope of the dc characteristic, (ii) the inverse square of the applied frequency, (iii) the inverse battery current in terms of the critical current, and (iv) the voltage amplitude of the inherent Josephson oscillations. For ω0≫ω ``classical'' detection proportional to curvature is obtained. For ω0∼ω resonance detection occurs, which depends to a considerable degree on fluctuations of the average contact voltage. These predictions are in reasonable agreement with experiments in which point-contact junctions were illuminated with klystron radiation at 10 and 90 GHz. Evidence is presented that the voltage fluctuations limiting the resonance response are the result of noise generated in the junction. Comparison of the noise-equivalent power expected from the simple model with measured results suggests that parasitic elements, such as shunt capacity, are not negligible at 90 GHz.
Experimental I-V curves of microwave-driven Josephson tunnel junctions with resistive shunts are reported. The results are in very good agreement with numerical calculations using the resistively shunted junction model. In the low-frequency regime there are three distinct regions in the I-V curves and two different types of Shapiro steps. It is demonstrated that the overall shape of the I-V curves can be explained by using an adiabatic interpretation of the junction response. The two different types of Shapiro steps are related to a compensation effect between dc and rf bias currents.
Measurements have been made of the low-frequency spectral density of the voltage noise in current-biased resistively shunted Josephson tunnel junctions under conditions in which the noise mixed-down from frequencies near the Josephson frequency (${\ensuremath{\nu}}_{J}$) to the measurement frequency ($\ensuremath{\ll}{\ensuremath{\nu}}_{J}$) is in the regime $h{\ensuremath{\nu}}_{J}>{k}_{B}T$. In this limit, quantum corrections to the mixed-down noise are important. The spectral densities measured on junctions with current-voltage characteristics close to the Stewart-McCumber model were in excellent agreement with the predicted values, with no fitted parameters. The mixed-down noise for a wide range of bias voltages was used to infer the spectral density of the current noise in the shunt resistor at frequency $\ensuremath{\nu}$. With no fitted parameters, this spectral density at frequencies up to 500 GHz was in excellent agreement with the prediction $(\frac{2h\ensuremath{\nu}}{R})coth(\frac{h\ensuremath{\nu}}{2{k}_{B}T})$. The presence of the zero-point term, $\frac{2h\ensuremath{\nu}}{R}$, at frequencies $h\ensuremath{\nu}>{k}_{B}T$ was clearly demonstrated. The current-voltage characteristics of a junction with ${\ensuremath{\beta}}_{L}\ensuremath{\equiv}\frac{2\ensuremath{\pi}{L}_{s}{I}_{0}}{{\ensuremath{\Phi}}_{0}}\ensuremath{\sim}1$ and ${\ensuremath{\beta}}_{C}\ensuremath{\equiv}\frac{2\ensuremath{\pi}{I}_{0}{R}^{2}C}{{\ensuremath{\Phi}}_{0}}\ensuremath{\ll}1$, where I0{I}_{0}I0​ is the critical current, CCC is the junction capacitance, and Ls{L}_{s}Ls​ is the shunt inductance, showed structure at voltages where the Josephson frequency was near a subharmonic of the LsC{L}_{s}CLs​C resonant frequency. The additional nonlinearity of the $I\ensuremath{-}V$ characteristic caused mixing down of noise near higher harmonics of the Josephson frequency, thereby greatly enhancing the voltage noise. The measured noise was in good agreement with that predicted by computer simulations.
We investigate the noise-affected I-V curves of small-area Josephson junctions through experiment, simulation, and theory. In particular, we consider I-V curves in which two different states of finite voltage coexist at the same dc bias: a high-voltage state that corresponds to the usual quasiparticle branch and a low-voltage state that is characterized by thermally activated phase diffusion. The observed hysteresis between the phase-diffusion and quasiparticle branches cannot be explained within the context of the simple resistively and capacitively shunted junction (RCSJ) model but is explained by extended models in which the damping increases with frequency. Frequency-dependent damping is shown to produce a qualitative change in the attractors of the noise-free system which allows the two voltage states to be simultaneously stable. This picture is confirmed by Monte Carlo simulations which accurately reproduce the experimental I-V curves of two different samples over a wide range of temperatures. In addition we develop analytic expressions for three key parameters of the I-V curve of junctions displaying hysteresis between the phase-diffusion and quasiparticle branches: the initial slope of the phase-diffusion branch, the bias level at which the junction switches from the phase-diffusion branch to the quasiparticle branch, and the bias level at which it returns to the phase-diffusion branch.
An experimental investigation is made of the subharmonic Shapiro steps observed on the I-V curves of high-T c superconductor Josephson junctions and on the bias-voltage dependences of the rf noise and detector response when the junctions are subjected to external submillimeter radiation. Structures of this type are ordinarily described by a nonsinusoidal current-phase relation, which is why subharmonic steps appear. Numerical modeling of the processes occurring in a Josephson junction by means of a simple current-phase relation, as in the case of an SNS junction, gives good agreement with experiment. The width of the characteristic Josephson generation line of the junction was estimated on the basis of the noise dependences and the selective detector response. The width can be explained by taking into account the shot noise of the tunneling component of the conductivity. A model of the conductivity of a high-T c superconductor Josephson junction, consisting of a tunnel junction with microshorts possessing metallic conductivity, is discussed.
The Josephson frequency conversion in the millimeter and submillimeter wave region is studied with superconducting Nb-Nb point contact junctions at 4.2 K, using the contact both as the local oscillator and the mixer with intermediate frequencies of 0.1 and 9.2 GHz. Frequency conversion signals are only detected in the latter case with a microwave receiver at 9.2 GHz in a range of Josephson frequencies between 145 and 1 600 GHz. The experiments with intermediate frequency fi of 0.1 GHz indicate for this small value of f i that the observed signals are not related to frequency conversion but noise effects. An analysis of the frequency conversion mechanism in a Josephson junction operated as an oscillator-mixer is proposed which includes the noise effects and also the feedback effects induced in a junction driven by a constant current source. We have then investigated the noise properties up to 450 GHz of superconducting point-contacts using the junction as an oscillator-mixer where the Josephson current is mixed with harmonics of an externally applied signal. The emitted intermediate frequency is detected at 9.2 GHz and its linewidth is measured. In the very high frequency range the dc quasiparticle current dominates in a Josephson weak-link and we compare the corresponding theoretical linewidth calculated by Scalapino with our experimental results.