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Physical review. B, Condensed matter

Measurements of quantum noise in resistively shunted Josephson junctions

R. H. Koch, Dale J. Van Harlingen, John L. Clarke

Published Jul 1, 1982• 117 citations
Publisher

Abstract

Measurements have been made of the low-frequency spectral density of the voltage noise in current-biased resistively shunted Josephson tunnel junctions under conditions in which the noise mixed-down from frequencies near the Josephson frequency (${\ensuremath{\nu}}_{J}$) to the measurement frequency ($\ensuremath{\ll}{\ensuremath{\nu}}_{J}$) is in the regime $h{\ensuremath{\nu}}_{J}>{k}_{B}T$. In this limit, quantum corrections to the mixed-down noise are important. The spectral densities measured on junctions with current-voltage characteristics close to the Stewart-McCumber model were in excellent agreement with the predicted values, with no fitted parameters. The mixed-down noise for a wide range of bias voltages was used to infer the spectral density of the current noise in the shunt resistor at frequency $\ensuremath{\nu}$. With no fitted parameters, this spectral density at frequencies up to 500 GHz was in excellent agreement with the prediction $(\frac{2h\ensuremath{\nu}}{R})coth(\frac{h\ensuremath{\nu}}{2{k}_{B}T})$. The presence of the zero-point term, $\frac{2h\ensuremath{\nu}}{R}$, at frequencies $h\ensuremath{\nu}>{k}_{B}T$ was clearly demonstrated. The current-voltage characteristics of a junction with ${\ensuremath{\beta}}_{L}\ensuremath{\equiv}\frac{2\ensuremath{\pi}{L}_{s}{I}_{0}}{{\ensuremath{\Phi}}_{0}}\ensuremath{\sim}1$ and ${\ensuremath{\beta}}_{C}\ensuremath{\equiv}\frac{2\ensuremath{\pi}{I}_{0}{R}^{2}C}{{\ensuremath{\Phi}}_{0}}\ensuremath{\ll}1$, where ${I}_{0}$ is the critical current, $C$ is the junction capacitance, and ${L}_{s}$ is the shunt inductance, showed structure at voltages where the Josephson frequency was near a subharmonic of the ${L}_{s}C$ resonant frequency. The additional nonlinearity of the $I\ensuremath{-}V$ characteristic caused mixing down of noise near higher harmonics of the Josephson frequency, thereby greatly enhancing the voltage noise. The measured noise was in good agreement with that predicted by computer simulations.

DOI
10.1103/physrevb.26.74

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Measurements have been made of the low-frequency spectral density of the voltage noise in current-biased resistively shunted Josephson tunnel junctions under conditions in which the noise mixed-down from frequencies near the Josephson frequency (\ensuremathνJ{\ensuremath{\nu}}_{J}\ensuremathνJ​) to the measurement frequency (\ensuremath≪\ensuremathνJ\ensuremath{\ll}{\ensuremath{\nu}}_{J}\ensuremath≪\ensuremathνJ​) is in the regime h\ensuremathνJ>kBTh{\ensuremath{\nu}}_{J}>{k}_{B}Th\ensuremathνJ​>kB​T. In this limit, quantum corrections to the mixed-down noise are important. The spectral densities measured on junctions with current-voltage characteristics close to the Stewart-McCumber model were in excellent agreement with the predicted values, with no fitted parameters. The mixed-down noise for a wide range of bias voltages was used to infer the spectral density of the current noise in the shunt resistor at frequency \ensuremathν\ensuremath{\nu}\ensuremathν. With no fitted parameters, this spectral density at frequencies up to 500 GHz was in excellent agreement with the prediction (2h\ensuremathνR)coth(h\ensuremathν2kBT)(\frac{2h\ensuremath{\nu}}{R})coth(\frac{h\ensuremath{\nu}}{2{k}_{B}T})(R2h\ensuremathν​)coth(2kB​Th\ensuremathν​). The presence of the zero-point term, 2h\ensuremathνR\frac{2h\ensuremath{\nu}}{R}R2h\ensuremathν​, at frequencies h\ensuremathν>kBTh\ensuremath{\nu}>{k}_{B}Th\ensuremathν>kB​T was clearly demonstrated. The current-voltage characteristics of a junction with \ensuremathβL\ensuremath≡2\ensuremathπLsI0\ensuremathΦ0\ensuremath∼1{\ensuremath{\beta}}_{L}\ensuremath{\equiv}\frac{2\ensuremath{\pi}{L}_{s}{I}_{0}}{{\ensuremath{\Phi}}_{0}}\ensuremath{\sim}1\ensuremathβL​\ensuremath≡\ensuremathΦ0​2\ensuremathπLs​I0​​\ensuremath∼1 and \ensuremathβC\ensuremath≡2\ensuremathπI0R2C\ensuremathΦ0\ensuremath≪1{\ensuremath{\beta}}_{C}\ensuremath{\equiv}\frac{2\ensuremath{\pi}{I}_{0}{R}^{2}C}{{\ensuremath{\Phi}}_{0}}\ensuremath{\ll}1\ensuremathβC​\ensuremath≡\ensuremathΦ0​2\ensuremathπI0​R2C​\ensuremath≪1, where I0{I}_{0}I0​ is the critical current, CCC is the junction capacitance, and Ls{L}_{s}Ls​ is the shunt inductance, showed structure at voltages where the Josephson frequency was near a subharmonic of the LsC{L}_{s}CLs​C resonant frequency. The additional nonlinearity of the I\ensuremath−VI\ensuremath{-}VI\ensuremath−V characteristic caused mixing down of noise near higher harmonics of the Josephson frequency, thereby greatly enhancing the voltage noise. The measured noise was in good agreement with that predicted by computer simulations.
Relaxation oscillations at subharmonics of the Josephson frequency may occur in a resistively shunted superconducting tunnel junction, where the shunt loop has a large inductance. We have studied the variation in the relaxation period with the shunt inductance and resistance, the Josephson critical current, and the bias current. Steps in the current-voltage curve were noted at bias points where the subharmonic number changed. Radiation powers of the order of a nW were coupled out of small, single, tunnel junctions at 10 GHz. Linewidths scaled with the frequency square as compared with those of the Josephson mode oscillations. Wide signals centered around harmonics of the relaxation frequency were due to amplified noise. Injection locking to a fraction of the frequency of a relatively strong signal occurred, while weaker signals were amplified. Gains up to 15 dB were achieved within a fairly large bandwidth, but the noise temperature was high. The importance of parametrically up-converted noise from low idler frequencies is emphasized.
We present new heterodyne receiver results obtained at 100 GHz using resistively-shunted Nb and NbN tunnel junctions. In addition, we have carried out accurate measurements of the available noise power of these devices at the L-band (1.5 GHz) IF frequency. Both the heterodyne and the output noise measurements show that the noise of these devices can be a factor of five or more higher than that predicted by the simple current-biased RSJ model. The noise approaches the appropriate thermal or thermal and shot noise limits for bias voltages where the nonlinearity is not strong (i.e., V>I/sub C/R/sub N/), but as expected from the RSJ model, can be significantly higher at the low voltages where the mixers are typically biased. The bias voltage dependence of the noise shows structure which is associated with resonances in the RF embedding circuit. Surprisingly, we find that changes in the high-frequency (100 GHz) impedance presented to the junction can dramatically affect the magnitude and voltage dependence of the low-frequency (1.5 GHz) noise. This emphasizes the necessity of very closely matching the junction to free space over a wide frequency range.>
We consider quantum fluctuations in a current biased overdamped Josephson junction in the regime when the bias current is larger than the critical current. The fluctuations of the voltage and phase across the junction are assumed to be initiated by equilibrium current fluctuations in the shunting resistor. This corresponds to low enough temperatures, when fluctuations of the normal current in the junction itself can be neglected. Quantum effects are important when the resistor temperature is low compared to the Josephson frequency, even in the case when noise is measured at frequencies lower than the temperature. We used the quantum Langevin equation in terms of random variables related to the limit cycle of the nonlinear Josephson oscillator. This allows to go beyond the perturbation theory and calculate the widths of the Josephson radiation lines.
We compute the decoherence caused by 1∕f1∕f1∕f fluctuations at low frequency fff in the critical current I0{I}_{0}I0​ of Josephson junctions incorporated into flux, phase, charge, and hybrid flux-charge superconducting quantum bits (qubits). The dephasing time ${\ensuremath{\tau}}_{\ensuremath{\phi}}$ scales as ${I}_{0}∕\ensuremath{\Omega}\ensuremath{\Lambda}{S}_{{I}_{0}}^{1∕2}(1\phantom{\rule{0.3em}{0ex}}\mathrm{Hz})$, where $\ensuremath{\Omega}∕2\ensuremath{\pi}$ is the energy-level splitting frequency, SI0(1Hz){S}_{{I}_{0}}(1\phantom{\rule{0.3em}{0ex}}\mathrm{Hz})SI0​​(1Hz) is the spectral density of the critical-current noise at 1Hz1\phantom{\rule{0.3em}{0ex}}\mathrm{Hz}1Hz, and $\ensuremath{\Lambda}\ensuremath{\equiv}\ensuremath{\mid}{I}_{0}d\ensuremath{\Omega}∕\ensuremath{\Omega}d{I}_{0}\ensuremath{\mid}$ is a parameter computed for given parameters for each type of qubit that specifies the sensitivity of the level splitting to critical-current fluctuations. Computer simulations show that the envelope of the coherent oscillations of any qubit after time ttt scales as $\mathrm{exp}(\ensuremath{-}{t}^{2}∕2{\ensuremath{\tau}}_{\ensuremath{\phi}}^{2})$ when the dephasing due to critical-current noise dominates the dephasing from all sources of dissipation. We compile published results for fluctuations in the critical current of Josephson tunnel junctions fabricated with different technologies and a wide range in I0{I}_{0}I0​ and area A\mathcal{A}A, and show that their values of SI0(1Hz){S}_{{I}_{0}}(1\phantom{\rule{0.3em}{0ex}}\mathrm{Hz})SI0​​(1Hz) scale to within a factor of 3 of $[144{({I}_{0}∕\ensuremath{\mu}\mathrm{A})}^{2}∕(\mathcal{A}∕\ensuremath{\mu}{\mathrm{m}}^{2})]{(\mathrm{pA})}^{2}∕\mathrm{Hz}$ at 4.2K4.2\phantom{\rule{0.3em}{0ex}}\mathrm{K}4.2K. We empirically extrapolate SI01∕2(1Hz){S}_{{I}_{0}}^{1∕2}(1\phantom{\rule{0.3em}{0ex}}\mathrm{Hz})SI0​1∕2​(1Hz) to lower temperatures using a scaling T(K)∕4.2T(\mathrm{K})∕4.2T(K)∕4.2. Using this result, we find that the predicted values of ${\ensuremath{\tau}}_{\ensuremath{\phi}}$ at 100mK100\phantom{\rule{0.3em}{0ex}}\mathrm{mK}100mK range from $0.8\phantom{\rule{0.5em}{0ex}}\text{to}\phantom{\rule{0.5em}{0ex}}12\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{s}$, and are usually substantially longer than values measured experimentally at lower temperatures.
The high-frequency amplification properties of transformer coupled, resistively shunted Josephson tunnel junctions have been investigated. The importance of the shunt loop inductance is stressed. It allows a high cutoff frequency, of significance for good high-frequency performance. The self-pumped parametric amplifier showed none of the excessive noise rise, which has hitherto plagued the development of externally pumped Josephson junction amplifiers. Around 10 GHz, we estimated a noise temperature less than 30 K for an amplifier pumped by a Josephson oscillation with a frequency well above twice the signal frequency. The corresponding gain of 5 dB may be increased in a better impedance matched circuit. The gain was very stable against variations in the bias conditions. A gain-bandwidth product as high as 0.3 was registered. The experimental results agreed well with the established theory for self-pumped parametric Josephson amplifiers. It should be possible to extend the low noise amplification by this device to mm wave frequencies. A relaxation oscillation occurred at a subharmonic of the Josephson frequency when the shunt loop inductance became large. The amplification in this mode followed closely the predictions of a simple model, where the signal modulated the switching of the sawtooth-like (relatively low frequency) relaxation current. Gains of about 15 dB were measured around 10 GHz, but the amplification was sensitive to bias conditions and noisy in this case where the relaxation frequency fell well below the signal frequency. Much improved properties were registered when the inductance was decreased so that the relaxation frequency approached the Josephson frequency and exceeded twice the signal frequency. The behavior then resembled that of a Josephson mode parametric amplifier, but the high content of harmonics of a relaxation oscillation meant that the amplifier became noisier due to converted noise from the many idler frequencies.