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Physical Review B

Self-induced transmission on intersubband resonance in multiple quantum wells

Cui Ni, Yueping Niu, Hui Sun, Shangqing Gong

Published Aug 26, 2008• 28 citations
Publisher

Abstract

We investigate the nonlinear propagation of ultrashort pulses on resonant intersubband transitions in multiple semiconductor quantum wells. It is shown that the nonlinearity rooted from electron-electron interactions destroys the condition giving rise to self-induced transparency. However, by adjusting the area of input pulse, we find the signatures of self-induced transmission due to a full Rabi flopping of the electron density, and this phenomenon can be approximately interpreted by the traditional standard area theorem via defining the effective area of input pulse.

DOI
10.1103/physrevb.78.075323

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We investigate the nonlinear propagation of ultrashort pulses on resonant intersubband transitions in multiple semiconductor quantum wells. It is shown that the nonlinearity rooted from electron-electron interactions destroys the condition giving rise to self-induced transparency. However, by adjusting the area of input pulse, we find the signatures of self-induced transmission due to a full Rabi flopping of the electron density, and this phenomenon can be approximately interpreted by the traditional standard area theorem via defining the effective area of input pulse.
We investigate intersubband Rabi flopping in modulation-doped semiconductor quantum wells with and without the propagation effects, respectively.It is shown that propagation effects have a larger impact on Rabi flopping than the nonlinearities rooted from electron-electron interactions in multiple quantum wells.By using ultrashort π pulses, an almost complete population inversion exists if the propagation effects are not considered; while no complete population inversion occurs in the presence of propagation effects.Furthermore, the magnitude of the impact of propagation effects may be controlled by varying the carrier density.
Radiative coupling of resonantly excited intersubband transitions in GaAs∕AlGaAs\mathrm{Ga}\mathrm{As}∕\mathrm{Al}\mathrm{Ga}\mathrm{As}GaAs∕AlGaAs multiple quantum wells can have a strong impact on the coherent nonlinear optical response, as is shown by phase and amplitude resolved propagation studies of ultrashort electric field transients. Upon increasing the driving field amplitude, strong radiative coupling leads to a pronounced self-induced absorption, followed by a bleaching due to the onset of delayed Rabi oscillations. A many-particle theory including light propagation effects accounts fully for the experimental results.
We study coherent ultrashort pulse propagation in a two-subband system in a symmetric semiconductor quantum well structure, performing calculations beyond the rotating wave approximation and the slowly varying envelope approximation and taking into account the effects of electron-electron interactions. The interaction of the quantum well structure with the electromagnetic fields is studied with modified, nonlinear, Bloch equations. These equations are combined with the full-wave Maxwell equations for the study of pulse propagation. We present results for the pulse propagation and the population inversion dynamics in the quantum well structure for different electron sheet densities.
We analyze the optical modulation of an interband resonant light pulse by intersubband resonant light pulses in a three-level quantum well system. The origin of the third order self-saturation optical nonlinearity resulting in the modification of the interband light absorption is assumed to lie in the carrier density modulation induced by the interband and intersubband transitions. The optical nonlinearity can be optimized to achieve the maximum modulation by applying control light pulses shorter than the intersubband energy relaxation time but longer than the intersubband phase relaxation time. We have also experimentally investigated the material system suitable for optical communication regime and have observed that the In0.53Ga0.47As/AlAs0.56Sb0.44 quantum well lattice matched to InP yielding an intersubband transition as short as 1.4 μm is the most suitable system for the proposed modulation scheme.