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AIP conference proceedings

Nonlinear pulse propagation in an intersubband resonance multiple quantum wells

Ni Cui, Shangqing Gong, Nikolaos A. Vainos, Stelios Couris, Emmanuel Paspalakis, Ioannis B. Koutselas, Stavros Pissadakis

Published Jan 1, 2010• 0 citations
Publisher

Abstract

By solving the full‐wave semiconductor Maxwell‐Bloch equations, we investigate the pulse propagation properties on resonant intersubband transitions in multiple semiconductor quantum wells. We find that self‐induced transmission could be realized by properly adjusting the area of input pulse.
DOI
10.1063/1.3521377

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We investigate the nonlinear propagation of ultrashort pulses on resonant intersubband transitions in multiple semiconductor quantum wells. It is shown that the nonlinearity rooted from electron-electron interactions destroys the condition giving rise to self-induced transparency. However, by adjusting the area of input pulse, we find the signatures of self-induced transmission due to a full Rabi flopping of the electron density, and this phenomenon can be approximately interpreted by the traditional standard area theorem via defining the effective area of input pulse.
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The nonlinear optical properties of semiconductors near an excitonic resonance are investigated theoretically by using the macroscopic J model [\"Ostreich and Knorr, Phys. Rev. B 48, 17811 (1993); \"Ostreich and Knorr, Phys. Rev. B 50, 5717 (1994)] based on the microscopic semiconductor Bloch equations. These nonlinear properties cause modulational instability of long light pulses with large gain and give rise to a self-induced transmission of short light pulses in a semiconductor. By an example of the latter well-studied effect, the validity of the used macroscopic model is demonstrated, and good agreement is found with both existing theoretical and experimental results.
: We study the creation of high-efficiency controlled population transfer in intersubband transitions of semiconductor quantum wells. We give emphasis to the case of interaction of the semiconductor quantum well with electromagnetic pulses with a duration of few cycles and even a single cycle. We numerically solve the effective nonlinear Bloch equations for a specific double GaAs/AlGaAs quantum well structure, taking into account the ultrashort nature of the applied field, and show that high-efficiency population inversion is possible for specific pulse areas. The dependence of the efficiency of population transfer on the electron sheet density and the carrier envelope phase of the pulse is also explored. For electromagnetic pulses with a duration of several cycles, we find that the change in the electron sheet density leads to a very different response of the population in the two subbands to pulse area. However, for pulses with a duration equal to or shorter than 3 cycles, we show that efficient population transfer between the two subbands is possible, independent of the value of electron sheet density, if the pulse area is Π.
We analyze the optical modulation of an interband resonant light pulse by intersubband resonant light pulses in a three-level quantum well system. The origin of the third order self-saturation optical nonlinearity resulting in the modification of the interband light absorption is assumed to lie in the carrier density modulation induced by the interband and intersubband transitions. The optical nonlinearity can be optimized to achieve the maximum modulation by applying control light pulses shorter than the intersubband energy relaxation time but longer than the intersubband phase relaxation time. We have also experimentally investigated the material system suitable for optical communication regime and have observed that the In0.53Ga0.47As/AlAs0.56Sb0.44 quantum well lattice matched to InP yielding an intersubband transition as short as 1.4 μm is the most suitable system for the proposed modulation scheme.