We report the observation of spectral hole-burning in the 4I9/2 → 4F3/2 transition of Nd3+ in a germanosilicate fiber. The temperature dependence of holes was measured in the range of 1.3-3 K and a power law of T1.2+/-0.1 was found.
Persistent spectral holeburning is known to occur in rare-earth doped silica-based glasses,1-3 where the mechanism is attributed to light induced changes in the coupling of tunnelling systems (TLS) which are characteristic of the amorphous state. A number of hole parameters such as lifetime, saturation depth and temperature dependence of the width, can provide important information on the density of states and dynamics of the TLS. We present the first data on spectral holeburning in a rare-earth doped heavy metal fluoride glass (HMF, Rennes) and compare with data obtained on a silicate glass (ED-2, Owens-Illinois). For this study we have chosen the well known 4I9/2 ← → 4F3/2 transition of the Nd3+ ion whose absorption peaks around 870nm (HMF) and 880nm (ED-2). Previous holeburning and photon echo measurements have been reported on the 4I9/2 ← → 4G5/2 transition of the Nd3+ of bulk ED-2 glass4 and on the 4I9/2 ← → 4F3/2 transition of the Nd3' transition of a pure silica fiber.3,5
The observation of statistical absorption fluctuations of an inhomogeneously broadened optical transition in a glass is reported. Frequency modulation spectroscopy in a 10-ppm Nd3+-doped-silica optical fiber has also revealed spectral holes that persist for days at 4.2 K. Homogeneous linewidths ${\ensuremath{\Gamma}}_{h}$ measured using hole burning and fluctuations are in good mutual agreement but are significantly larger than those inferred from photon echo decays in the same system. This difference confirms recent predictions of a time-dependent ${\ensuremath{\Gamma}}_{h}$(t) arising from the tunneling dynamics of the glass.
The homogeneous linewidth of the transition I15/24−I13/24 in highly doped erbium fibers and its dependence with temperature in the range from 10 to 50 K are experimentally characterized using spectral hole burning. The homogeneous linewidth dependence with temperature is quadratic above 20 K where homogeneous broadening is dominated by two-phonon Raman processes, and linear at lower temperatures where direct phonon processes occur. This characteristic power-law dependence was also derived from transmittance measurements. The solution of nonlinear field equations using the results obtained from our experiments predicts that Gaussian probe pulses propagate at subluminal speed through the narrow spectral holes burned in erbium-doped fibers. For gigahertz pulses in the telecommunication window, a fractional delay as high as 0.6 is predicted.