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Applied Physics Letters

Raman polarization-selective feedback schemes for all-optical microwave frequency standards

Z. D. Liu, P. Juncar, Daniel Bloch, M. Ducloy

Published Oct 14, 1996• 8 citations
Publisher

Abstract

All-optical locking of the frequency difference between two laser diodes onto a Raman transition is demonstrated. The properties of Raman-type polarization spectroscopy are discussed and exemplified in the cases of the 3.036 GHz Raman resonance of the 85Rb D2 line. The generation of a polarization-selective Raman resonant optical feedback ensures the Raman optical locking of the slave diode laser onto the master oscillator.

DOI
10.1063/1.117510

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All-optical locking of the frequency difference between two laser diodes onto a Raman transition is demonstrated. The properties of Raman-type polarization spectroscopy are discussed and exemplified in the cases of the 3.036 GHz Raman resonance of the 85Rb D2 line. The generation of a polarization-selective Raman resonant optical feedback ensures the Raman optical locking of the slave diode laser onto the master oscillator.
We produced two Raman-laser beams with a frequency offset of 9.2 GHz by injection-locking of a master diode-laser to a slave diode-laser. The master laser was phase-modulated at 9.2 GHz while the laser beam passed through an electrooptic modulator. The phase-modulated beam was injected into the slave laser that was oscillating around one of the side-bands of the master laser. The relative linewidth of the two lasers was less than 10 Hz. Using these laser beams, coherent population trapping resonance of cesium atoms was observed for the purpose of testing the phase-coherence of the laser beams.
Two phase-coherent Raman laser beams with a frequency offset of 6.835 GHz were generated by sideband injection-locking technique. A master diode laser was phase-modulated at 6.835 GHz by a fiber electro-optic modulator. A slave diode was injection-locked to the -1 sideband of the phase-modulated beam, and another diode was locked to the master laser carrier. This method produced stable and spatially separated Raman lasers with a large frequency shift range (>180 MHz). The relative linewidth of these two beams was ∼1 Hz, and the unwanted carrier mode was suppressed down to -24 dB. Stimulated Raman transitions and Ramsey fringes were driven by Raman lasers in a cold atomic beam.
We produced two Raman-laser beams with a frequency offset of 6.834GHz by injection-locking of a master diode-laser to a slave diode-laser. The master laser was phase-modulated at 6.834 GHz with an Electro-Optic Modulator and then injected into the slave laser that was oscillating around one of the side-bands. The relative linewidth of the two lasers was less than 1 Hz. Utilizing these laser beams, we realized the coherent manipulation of atomic wave packets in a Mach-Zehnder type atom interferometry.
The stabilizing and shifting of laser frequency are very important for the interaction between the laser and atoms. The modulation transfer spectroscopy for the 87 Rb atom with D2 line transition F = 2 → F′ = 3 is used for stabilizing and shifting the frequency of the external cavity grating feedback diode laser. The resonant phase modulator with electro—optical effect is used to generate frequency sideband to lock the laser frequency. In the locking scheme, circularly polarized pump- and probe-beams are used. By optimizing the temperature of the vapor, the pump- and probe-beam intensity, the laser linewidth of 280 kHz is obtained. Furthermore, the magnetic field generated by a solenoid is added into the system. Therefore the system can achieve the frequency locking at any point in a range of hundreds of megahertz frequency shifting with very low power loss.