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Conference on Precision Electromagnetic Measurements

Production of raman laser beams using injection-locking technique

Sang Eon Park, Taeg Yong Kwon, H. S. Lee

Published Jun 25, 2003• 0 citations
Publisher

Abstract

We produced two Raman-laser beams with a frequency offset of 9.2-GHz using a simple injection-locking technique. A slave diode-laser is injection-locked to one f first-order sidebands of a master diode-laser produced by a 9.2 GHz EOM (electro-optic modulator). Using these Raman-laser beams, we observed CPT resonance in a cesium vapor cell.

DOI
10.1109/cpem.2002.1034803

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We produced two Raman-laser beams with a frequency offset of 9.2-GHz using a simple injection-locking technique. A slave diode-laser is injection-locked to one f first-order sidebands of a master diode-laser produced by a 9.2 GHz EOM (electro-optic modulator). Using these Raman-laser beams, we observed CPT resonance in a cesium vapor cell.
We produced two Raman-laser beams with a frequency offset of 9.2 GHz by injection-locking of a master diode-laser to a slave diode-laser. The master laser was phase-modulated at 9.2 GHz while the laser beam passed through an electrooptic modulator. The phase-modulated beam was injected into the slave laser that was oscillating around one of the side-bands of the master laser. The relative linewidth of the two lasers was less than 10 Hz. Using these laser beams, coherent population trapping resonance of cesium atoms was observed for the purpose of testing the phase-coherence of the laser beams.
Two phase-coherent Raman laser beams with a frequency offset of 6.835 GHz were generated by sideband injection-locking technique. A master diode laser was phase-modulated at 6.835 GHz by a fiber electro-optic modulator. A slave diode was injection-locked to the -1 sideband of the phase-modulated beam, and another diode was locked to the master laser carrier. This method produced stable and spatially separated Raman lasers with a large frequency shift range (>180 MHz). The relative linewidth of these two beams was ∼1 Hz, and the unwanted carrier mode was suppressed down to -24 dB. Stimulated Raman transitions and Ramsey fringes were driven by Raman lasers in a cold atomic beam.
We produced two Raman-laser beams with a frequency offset of 6.834GHz by injection-locking of a master diode-laser to a slave diode-laser. The master laser was phase-modulated at 6.834 GHz with an Electro-Optic Modulator and then injected into the slave laser that was oscillating around one of the side-bands. The relative linewidth of the two lasers was less than 1 Hz. Utilizing these laser beams, we realized the coherent manipulation of atomic wave packets in a Mach-Zehnder type atom interferometry.
By optical injection of an 852-nm extended-cavity diode laser (master laser) to lock the + 1-order sideband of a ~9-GHz-current-modulated diode laser (slave laser), we generate a pair of phase-locked lasers with a frequency difference up to ~9-GHz for a cesium (Cs) magneto-optical trap (MOT) with convenient tuning capability. For a cesium MOT, the master laser acts as repumping laser, locked to the Cs 6S₁/₂ (F = 3) - 6P₃/₂ (F' = 4) transition. When the + 1-order sideband of the 8.9536-GHz-current-modulated slave laser is optically injection-locked, the carrier operates on the Cs 6S₁/₂ (F = 4) - 6P₃/₂ (F' = 5) cooling cycle transition with -12 MHz detuning and acts as cooling/trapping laser. When carrying a 9.1926-GHz modulation signal, this phase-locked laser system can be applied in the fields of coherent population trapping and coherent manipulation of Cs atomic ground states.
Raman pulse sequences are generally used to coherently manipulate the atomic wave packet in an atom interferometer.High power Raman beams allow more atoms join in the velocity-sensitive stimulated Raman transition,and that will be helpful for obtaining high signal to noise ratio in atom interferometer fringe.Development of high power Raman laser is important for cold atom interferometer experiments.The experimental realization of high power Raman lasers are demonstrated based on injection locking technique. Master laser is modulated by a 1.5 GHz acousto-optical modulator,and the±1 order diffraction lights are used as seeding Raman lasers.The seeding lasers are injection locked to two slave lasers which are further amplified as Raman beams.The frequency difference of Raman beams is 3.0 GHz,and the detuning range is about 200 MHz.
We describe the injection locking of two infrared (794 nm) laser diodes that are each part of a frequency-doubled laser system. An acousto-optic modulator in the injection path gives an offset of 1.6 GHz between the lasers for driving Raman transitions between states in the hyperfine split (by 3.2 GHz) ground level of 43Ca+. The offset can be disabled for use in 40Ca+. We measure the relative linewidth of the frequency-doubled beams to be 42 mHz in an optical heterodyne measurement. The use of both injection locking and frequency doubling combines spectral purity with high optical power. Our scheme is applicable for providing Raman beams across other ion species and neutral atoms where coherent optical manipulation is required.