Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Journal of the Optical Society of America B

Reflective vertical cavity quantum-well saturable absorber as an all-optical nonlinear phase-shifting element

Rajib Pradhan, S. Saha, Prasanta Kumar Datta

Published Nov 5, 2014• 4 citations
Publisher

Abstract

A scheme of an all-optical nonlinear phase-shifting element is proposed, based on a reflective vertical cavity semiconductor (quantum-well) saturable absorber (R-VCSSA). The nonlinear round-trip phase shift in a low-intensity resonant VCSSA is obtained at an input intensity due to the saturating nonlinearity in index change and optically induced thermal effects. An enhanced large nonlinear positive or negative phase shift incurred in a reflected signal is investigated analytically with the wavelength tuning of the probe signal around the low-intensity resonant wavelength of a Fabry–Perot cavity. The device may be useful in compensating the phase of an input signal, either positive or negative, in long-haul fiber communications. A representative InGaAs/InP quantum-well-based VCSSA is considered to demonstrate the phase shift in the pump–probe configuration. With a device speed of 10 GHz, maximum phase shifts of −0.24 and +0.14 rad at pump power of 19.2 mW are observed for the operations at probe wavelengths of 1555.6 and 1557.8 nm, respectively.

DOI
10.1364/josab.31.002956

Related papers

Phase response characterization of semiconductor saturable absorber for applications in nonlinear optical signal processing and phase-modulated signals regeneration

Lokanath Mishra, An Nguyen, Claudio Porzi +3 more

The phase response of a commercial saturable absorber based on semiconductor quantum wells embedded in a resonant cavity is investigated. The nonlinear absorption change is accompanied by a variation of the spectral phase characteristic. Also, a nonlinear change in the refractive index of the material, induced by the modified carrier density, produces a weak shift in the resonant wavelength of the cavity. These effects can be exploited to realize an optically-controllable phase shifter. Simulations based on a nonlinear model are also carried out in order to investigate the effect of the various cavity parameters and phase response of the device under different operating conditions. The results from this characterization and numerical analysis show that such device can have the potential for practical applications in telecom systems, including dynamic dispersion compensation, tunable nonlinear effects compensation, and nonlinear signal processing and all-optical regeneration of phase-modulated optical signals.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Feb 10, 2011•1 citation

Optical bistability in vertical-cavity semiconductor optical amplifiers

Pengyue Wen, Michael Sánchez, Matthias Groß +1 more

We present an overview of the properties and applications of optical bistability in vertical-cavity semiconductor optical amplifiers (VCSOAs). The basic physics and analytical models of this optical nonlinearity are discussed. Experimental results obtained from a VCSOA operated in the 850 nm wavelength region are presented. Counterclockwise hysteresis loops are obtained over a range of initial phase detuning and bias currents. One hysteresis loop is observed experimentally with an input power as low as 2 muW when the device is biased at 98% of its lasing threshold. Numerical simulations based on the Fabry-Perot resonator model and rate equations we developed show good agreement with our experimental observations. In addition, a low input intensity high contrast (10:1) optical and gate and 2R regeneration are demonstrated. We believe that bistable VCSOAs can significantly advance the prospect of a dense two-dimensional array of low-switching-intensity all-optical logic and memory elements.

Applied Optics•Aug 15, 2006•11 citations

Low power electronic optical bistability in single quantum well InP/InGaAsP Fabry–Perot waveguide resonators

B. Hübner, Roland Zengerle, A. Forchel

Optical bistability in a single quantum well waveguide resonator in the InP/InGaAsP material system is demonstrated. High contrast ratio (≳3:1) and switching at low power (≊1.5 mW) was obtained by using a single quantum well at a wavelength near the maximum nonlinear refractive index change and by depositing a reflective coating on the rear end of the waveguide. Clear optical bistability is observed in a wide wavelength range of 1480–1525 nm. Due to the low input power, cw operation of the device was possible at room temperature.

Applied Physics Letters•Jun 5, 1995•9 citations

Direct measurement of dispersive nonlinearities in GaAs

Y. H. Lee, B. K. Rhee, Arturo Chavez-Pirson +3 more

Nonlinear refractive-index changes in GaAs are obtained at room temperature by measuring shifts of Fabry-Perot (F.P.) transmission. The 299-Å multiple-quantum-well GaAs sample was sandwiched between two dielectric mirrors (90% reflectivity) to form a F.P. etalon (finesse =10). The pump beam was tuned to 821 nm and modulated to obtain 1-μs pulses at 10 kHz. The photoluminescence from a focused pump spot at the GaAs etalon was used as a broadband probe source. Since the photoluminescence is due to carriers generated by a pump beam, the pump and probe beams automatically align themselves. The fast electronic nonlinearity exhibited blue shifts (negative index changes) of the F.P. transmission peaks, while the slow thermal nonlinearity showed red shifts (positive index changes). Nonlinear index changes were calculated from the measured shifts of the F.P. peaks for different pump intensities. A self-consistent F.P. phase function for this calculation was obtained assuming lengths of 2.9 and 1.5 μm for the GaAs and air gap, respectively. Optical bistability was most easily observed for the region of large index change (873-878 nm). The slow nonlinear index changes below the band gap showed nonresonant characteristics rather than resonant, saturable behavior.

Annual Meeting Optical Society of America•Jan 1, 1986•4 citations

Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength

F. Jeannès, Gilles Patriarche, Rozette Azoulay +3 more

We report on low-power optical bistability in a vertical cavity structure at 1.55-μm wavelength due to the bandgap resonant dispersive optical nonlinearity of InGaAsP. In this structure, a GaAs-AlAs Bragg reflector grown on GaAs and the nonlinear medium grown on InP are bonded through wafer-fusion, leading to a high-quality vertical cavity after deposition of a top dielectric mirror. This device shows interesting characteristics for optical switching applications at fiber communication wavelengths, such as a switching contrast higher than 8:1 in the reflective mode and a bistability threshold power as low as 0.6 mW. True steady-state memory effect is observed with continuous-wave input, and the device switching time is in the ns range.

IEEE Photonics Technology Letters•Apr 1, 1996•12 citations

Optical bistability in an InGaAs/InP multiple quantum well waveguide Fabry–Perot cavity

Jeffrey E. Ehrlich, David T. Neilson, Andy C. Walker +5 more

We report measurements of quasi-cw optical bistability in an InGaAs/InP multiple quantum well waveguide Fabry–Perot cavity at 1.47 μm wavelength. This operating wavelength is detuned from the band-edge resonance by 0.07 μm, where an enhanced free-carrier contribution to the nonlinear refractive index due to 2D confinement of carriers in the quantum wells accounts for the large index variations. The effect of any thermally induced nonlinear response is negligible.

Applied Physics Letters•Sep 20, 1993•8 citations
A scheme of an all-optical nonlinear phase-shifting element is proposed, based on a reflective vertical cavity semiconductor (quantum-well) saturable absorber (R-VCSSA). The nonlinear round-trip phase shift in a low-intensity resonant VCSSA is obtained at an input intensity due to the saturating nonlinearity in index change and optically induced thermal effects. An enhanced large nonlinear positive or negative phase shift incurred in a reflected signal is investigated analytically with the wavelength tuning of the probe signal around the low-intensity resonant wavelength of a Fabry–Perot cavity. The device may be useful in compensating the phase of an input signal, either positive or negative, in long-haul fiber communications. A representative InGaAs/InP quantum-well-based VCSSA is considered to demonstrate the phase shift in the pump–probe configuration. With a device speed of 10 GHz, maximum phase shifts of −0.24 and +0.14 rad at pump power of 19.2 mW are observed for the operations at probe wavelengths of 1555.6 and 1557.8 nm, respectively.
The phase response of a commercial saturable absorber based on semiconductor quantum wells embedded in a resonant cavity is investigated. The nonlinear absorption change is accompanied by a variation of the spectral phase characteristic. Also, a nonlinear change in the refractive index of the material, induced by the modified carrier density, produces a weak shift in the resonant wavelength of the cavity. These effects can be exploited to realize an optically-controllable phase shifter. Simulations based on a nonlinear model are also carried out in order to investigate the effect of the various cavity parameters and phase response of the device under different operating conditions. The results from this characterization and numerical analysis show that such device can have the potential for practical applications in telecom systems, including dynamic dispersion compensation, tunable nonlinear effects compensation, and nonlinear signal processing and all-optical regeneration of phase-modulated optical signals.
We present an overview of the properties and applications of optical bistability in vertical-cavity semiconductor optical amplifiers (VCSOAs). The basic physics and analytical models of this optical nonlinearity are discussed. Experimental results obtained from a VCSOA operated in the 850 nm wavelength region are presented. Counterclockwise hysteresis loops are obtained over a range of initial phase detuning and bias currents. One hysteresis loop is observed experimentally with an input power as low as 2 muW when the device is biased at 98% of its lasing threshold. Numerical simulations based on the Fabry-Perot resonator model and rate equations we developed show good agreement with our experimental observations. In addition, a low input intensity high contrast (10:1) optical and gate and 2R regeneration are demonstrated. We believe that bistable VCSOAs can significantly advance the prospect of a dense two-dimensional array of low-switching-intensity all-optical logic and memory elements.
Optical bistability in a single quantum well waveguide resonator in the InP/InGaAsP material system is demonstrated. High contrast ratio (≳3:1) and switching at low power (≊1.5 mW) was obtained by using a single quantum well at a wavelength near the maximum nonlinear refractive index change and by depositing a reflective coating on the rear end of the waveguide. Clear optical bistability is observed in a wide wavelength range of 1480–1525 nm. Due to the low input power, cw operation of the device was possible at room temperature.
Nonlinear refractive-index changes in GaAs are obtained at room temperature by measuring shifts of Fabry-Perot (F.P.) transmission. The 299-Å multiple-quantum-well GaAs sample was sandwiched between two dielectric mirrors (90% reflectivity) to form a F.P. etalon (finesse =10). The pump beam was tuned to 821 nm and modulated to obtain 1-μs pulses at 10 kHz. The photoluminescence from a focused pump spot at the GaAs etalon was used as a broadband probe source. Since the photoluminescence is due to carriers generated by a pump beam, the pump and probe beams automatically align themselves. The fast electronic nonlinearity exhibited blue shifts (negative index changes) of the F.P. transmission peaks, while the slow thermal nonlinearity showed red shifts (positive index changes). Nonlinear index changes were calculated from the measured shifts of the F.P. peaks for different pump intensities. A self-consistent F.P. phase function for this calculation was obtained assuming lengths of 2.9 and 1.5 μm for the GaAs and air gap, respectively. Optical bistability was most easily observed for the region of large index change (873-878 nm). The slow nonlinear index changes below the band gap showed nonresonant characteristics rather than resonant, saturable behavior.
We report on low-power optical bistability in a vertical cavity structure at 1.55-μm wavelength due to the bandgap resonant dispersive optical nonlinearity of InGaAsP. In this structure, a GaAs-AlAs Bragg reflector grown on GaAs and the nonlinear medium grown on InP are bonded through wafer-fusion, leading to a high-quality vertical cavity after deposition of a top dielectric mirror. This device shows interesting characteristics for optical switching applications at fiber communication wavelengths, such as a switching contrast higher than 8:1 in the reflective mode and a bistability threshold power as low as 0.6 mW. True steady-state memory effect is observed with continuous-wave input, and the device switching time is in the ns range.