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Science

Single-Electron Delocalization in Hybrid Vertical-Lateral Double Quantum Dots

T. Hatano, Michael P. Stopa, Seigo Tarucha

Published Jul 7, 2005• 131 citations
Publisher

Abstract

We used a hybrid vertical-lateral double-dot device, consisting of laterally coupled vertical quantum dots, to measure the interdot tunnel coupling. By using nonlinear transport measurements of "Coulomb diamonds," we showed that an inherent asymmetry in the capacitances of the component dots influences the diamond slopes, thereby allowing for the determination of the dot through which the electron has passed. We used this technique to prepare a delocalized one-electron state and Heitler-London (HL) two-electron state, and we showed that the interdot tunnel coupling, which determines whether HL is the ground state, is tunable. This implies that our device may be useful for implementing two-electron spin entanglement.

DOI
10.1126/science.1111205

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We used a hybrid vertical-lateral double-dot device, consisting of laterally coupled vertical quantum dots, to measure the interdot tunnel coupling. By using nonlinear transport measurements of "Coulomb diamonds," we showed that an inherent asymmetry in the capacitances of the component dots influences the diamond slopes, thereby allowing for the determination of the dot through which the electron has passed. We used this technique to prepare a delocalized one-electron state and Heitler-London (HL) two-electron state, and we showed that the interdot tunnel coupling, which determines whether HL is the ground state, is tunable. This implies that our device may be useful for implementing two-electron spin entanglement.
We determine the spin-exchange coupling J between two electrons located in two vertically tunnel-coupled quantum dots, and its variation when magnetic (B) and electric (E) fields (both in-plane and perpendicular) are applied. We predict a strong decrease of J as the in-plane B field is increased, mainly due to orbital compression. Combined with the Zeeman splitting, this leads to a singlet-triplet crossing, which can be observed as a pronounced jump in the magnetization at in-plane fields of a few T, and perpendicular fields of the order of 10 T for typical self-assembled dots. We use harmonic potentials to model the confining of electrons, and calculate the exchange J using the Heitler-London and Hund-Mulliken techniques, including the long-range Coulomb interaction. With our results we provide experimental criteria for the distinction of singlet and triplet states, and therefore for microscopic spin measurements. In the case where dots of different sizes are coupled, we present a simple method to switch the spin coupling on and off with exponential sensitivity using an in-plane electric field. Switching the spin coupling is essential for quantum computation using electronic spins as qubits.
We report on our recent progress in applying semiconductor quantum dots for spin-based quantum computation, as proposed by Loss and DiVincenzo (1998 Phys. Rev. A 57 120). For the purpose of single-electron spin resonance, we study different types of single quantum dot devices that are designed for the generation of a local ac magnetic field in the vicinity of the dot. We observe photon-assisted tunnelling as well as pumping due to the ac voltage induced by the ac current driven through a wire in the vicinity of the dot, but no evidence for ESR so far. Analogue concepts for a double quantum dot and the hydrogen molecule are discussed in detail. Our experimental results in laterally coupled vertical double quantum dot device show that the Heitler–London model forms a good approximation of the two-electron wavefunction. The exchange coupling constant J is estimated. The relevance of this system for two-qubit gates, in particular the SWAP operation, is discussed. Density functional calculations reveal the importance of the gate electrode geometry in lateral quantum dots for the tunability of J in realistic two-qubit gates.
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We have used a hybrid vertical-lateral double quantum dot to study the excitation energy spectrum for one- and two-electron states, which are effectively formed on top of a certain core shell. We have observed bonding and antibonding states, and exchange coupled singlet and triplet states for the one- and two-electron states, respectively, and derived the interdot tunnel coupling and exchange coupling energies for various parameters of interdot level detuning, central gate voltage and magnetic field. The obtained exchange coupling energy is consistently reproduced by calculation using the Hund-Mulliken method.
PACS. 73.23.-b – Electronic transport in mesoscopic systems. Abstract. – We study entanglement of charge qubits in a vertical tunnel-coupled double quantum dot containing two interacting electrons. Exact diagonalization is used to compute the negativity characterizing entanglement. We find that entanglement can be efficiently generated and controlled by sidegate voltages, and describe how it can be detected. For large enough tunnel coupling, the negativity shows a pronounced maximum at an intermediate interaction strength within the Wigner molecule regime. Semiconductor few-electron quantum dots (QDs) continue to attract a lot of interest, as it has now become possible to experimentally control both the electronic spin and charge in a condensed-phase environment in an unprecedented manner. In particular, double quantum dots (DQDs) can be fabricated in a well-controlled fashion in high-quality semiconductor devices, and are currently under intense study [1–9]. Vertical or lateral tunnel-coupled DQDs are among the most promising candidates for realizing spin or charge qubits in a quantum information processor [10–12]. Their main advantages are scalability, good control of physical properties via tunable external (sidegate-) voltages or magnetic fields, and spatial separation
Few-electron states confined in quantum-dot arrays are key objects in quantum computing. The discrimination between these states is essential for the readout of a (multi-)qubit state, and can be achieved through a measurement of the quantum capacitance within the gate-reflectometry approach. For a system controlled by several gates, the dependence of the measured capacitance on the direction of the oscillations in the voltage space is captured by the quantum capacitance matrix. Herein, we apply this tool to study a double quantum dot coupled to three gates, which enable the tuning of both the bias and the tunneling between the two dots. Analytical solutions for the two-electron case are derived within a Hubbard model, showing the overall dependence of the quantum capacitance matrix on the applied gate voltages. In particular, we investigate the role of the tunneling gate and reveal the possibility of exploiting interdot coherences in addition to charge displacements between the dots. Our results can be directly applied to double-dot experimental setups, and pave the way for further applications to larger arrays of quantum dots.