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Entropy

Multi-Dimensional Quantum Capacitance of the Two-Site Hubbard Model: The Role of Tunable Interdot Tunneling

Andrea Secchi, Filippo Troiani

Published Dec 31, 2022• 4 citations
Publisher

Abstract

Few-electron states confined in quantum-dot arrays are key objects in quantum computing. The discrimination between these states is essential for the readout of a (multi-)qubit state, and can be achieved through a measurement of the quantum capacitance within the gate-reflectometry approach. For a system controlled by several gates, the dependence of the measured capacitance on the direction of the oscillations in the voltage space is captured by the quantum capacitance matrix. Herein, we apply this tool to study a double quantum dot coupled to three gates, which enable the tuning of both the bias and the tunneling between the two dots. Analytical solutions for the two-electron case are derived within a Hubbard model, showing the overall dependence of the quantum capacitance matrix on the applied gate voltages. In particular, we investigate the role of the tunneling gate and reveal the possibility of exploiting interdot coherences in addition to charge displacements between the dots. Our results can be directly applied to double-dot experimental setups, and pave the way for further applications to larger arrays of quantum dots.

DOI
10.3390/e25010082

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Few-electron states confined in quantum-dot arrays are key objects in quantum computing. The discrimination between these states is essential for the readout of a (multi-)qubit state, and can be achieved through a measurement of the quantum capacitance within the gate-reflectometry approach. For a system controlled by several gates, the dependence of the measured capacitance on the direction of the oscillations in the voltage space is captured by the quantum capacitance matrix. Herein, we apply this tool to study a double quantum dot coupled to three gates, which enable the tuning of both the bias and the tunneling between the two dots. Analytical solutions for the two-electron case are derived within a Hubbard model, showing the overall dependence of the quantum capacitance matrix on the applied gate voltages. In particular, we investigate the role of the tunneling gate and reveal the possibility of exploiting interdot coherences in addition to charge displacements between the dots. Our results can be directly applied to double-dot experimental setups, and pave the way for further applications to larger arrays of quantum dots.
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We are entering the era of the second quantum revolution, where we aim to harness the power of quantum mechanics to create new technologies. Quantum technologies have the potential to revolutionize the fields of simulation, computation, communication, sensing, metrology, and many others. Here we discuss analog quantum simulation, which has attracted a lot of attention in the last few years from several platforms. Although arrays of gate-defined quantum dots exhibit significant potential for analog simulation, example experiments have been few and far between. This thesis focuses on simulating the Fermi-Hubbard model using two dimensional (2d) arrays of quantum dots. The first experiment describes the creation and measurement of a 2x2 quantum dot array. Historically, most experiments with quantum dots have been performed with linear arrays due to the relative ease of fabrication. We introduce a bi-layer gate structure, facilitated by the lift-off of sputtered silicon nitride, to create the 2x2 dot array. This gate design enables us to achieve unprecedented tunability of the tunnel coupling between all nearest-neighbor pairs of dots in 2d arrays. We also demonstrate individual control over the chemical potential and the electron occupation of each dot along with accurate measurement of the on-site and inter-site interaction terms. The use of virtual gates significantly aids in the tuning of tunnel coupling and chemical potential. The demonstrated high degree of control of the system along with fast single-shot spin-readout achieved through Pauli spin blockade establish this dot array as a promising simulator of the Fermi-Hubbard model. The 2x2 dot array is used to simulate Nagaoka ferromagnetism in the next experiment. This form of itinerant ferromagnetism arises from the Fermi-Hubbard model, and was first shown analytically in the limit of infinite interaction strengths and infinite lattices by Nagaoka in 1966. Nagaoka ferromagnetism has been a topic of rigorous theoretical studies ever since, but its experimental signature has eluded us for more than five decades. In this experiment, we load the four dot plaquette with three electrons and demonstrate the emergence of spontaneous ferromagnetism by measuring the spin correlation of two out of the three electrons. Changing the topology of the array to an open chain is shown to destroy the ferromagnetic signature, consistent with the Lieb-Mattis theorem. We also show indications that this ferromagnetic ground state can be destroyed by applying a perpendicular magnetic field, unlike most other forms of ferromagnetism. However, this ground state shows striking robustness to the offset in the local potential of any dot. This is the first experimental verification of Nagaoka’s prediction as well as the first simulation of magnetism using quantumdot arrays. The final experiment takes a different approach to simulate the Fermi-Hubbardmodel with a large 2d array of quantum dots. The dot array is created using only three gates in a top-down approach. This allows for only global control over the electron filling and tunnel coupling of the dots, contrary to the previous experiments. The readout is performed with capacitance spectroscopy, which allows us to directly probe the density of states of the two-dimensional electron systems. We measure the disorder levels and optimize both substrates and gating strategies to induce periodic potential, sufficiently stronger than the disorder level, at the 2d electron gas. Although we demonstrate a novel platformfor the realization of artificial lattices of interacting particles, this effort is currently limited by the substrate inhomogeneity.
We study the two-qubit controlled-NOT gate operating on qubits encoded in the spin state of a pair of electrons in a double quantum dot. We assume that the electrons can tunnel between the two quantum dots encoding a single qubit, while tunneling between the quantum dots that belong to different qubits is forbidden. Therefore, the two qubits interact exclusively through the direct Coulomb repulsion of the electrons. We find that entangling two-qubit gates can be performed by the electrical biasing of quantum dots and/or tuning of the tunneling matrix elements between the quantum dots within the qubits. The entangling interaction can be controlled by tuning the bias through the resonance between the singly occupied and doubly occupied singlet ground states of a double quantum dot.
We present a theoretical analysis of the capacitance of a double quantum dot in the charge and spin qubit configurations probed at high frequencies. We find that, in general, the total capacitance of the system consists of two state-dependent terms: the quantum capacitance arising from adiabatic charge motion and the tunneling capacitance that appears when repopulation occurs at a rate comparable or faster than the probing frequency. The analysis of the capacitance lineshape as a function of externally controllable variables offers a way to characterize the qubits' charge and spin state as well as relevant system parameters such as charge and spin relaxation rates, tunnel coupling, electron temperature, and electron ggg factor. Overall, our analysis provides a formalism to understand dispersive qubit-resonator interactions which can be applied to high-sensitivity and noninvasive quantum-state readout.
Bound states in quantum dots coupled to superconductors can be in a coherent superposition of states with different electron number but with the same fermion parity. Electrostatic gating can tune this superposition to a sweet spot, where the quantum dot has the same mean electric charge independent of its electron-number parity. Here, we propose to encode quantum information in the local fermion parity of two tunnel-coupled quantum dots embedded in a Josephson junction. At the sweet spot, the qubit states have zero charge dipole moment. This protects the qubit from dephasing due to charge noise acting on the potential of each dot, as well as fluctuations of the (weak) interdot tunneling. At weak interdot tunneling, relaxation is suppressed because of disjoint qubit states. However, for strong interdot tunneling the system is protected against noise affecting each quantum dot separately (energy-level noise, dot-superconductor tunneling fluctuations, and hyperfine interactions). Finally, we describe initialization and readout as well as single-qubit and two-qubit gates by pulsing gate voltages. Published by the American Physical Society 2024