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Physical Review A

Optical bistability in a multiple-quantum-well structure with Fabry-Pérot and distributed-feedback resonators

Gian Paolo Bava, F. Castelli, Pierluigi Debernardi, L. A. Lugiato

Published Apr 1, 1992• 9 citations
Publisher

Abstract

The system we analyze has the structure of a planar optical waveguide containing a multiple quantum well, with the planes of the wells parallel to the direction of propagation. We consider the two different configurations of a Fabry-P\'erot cavity and distributed-feedback device. The optical nonlinearities are described by means of the first-principles theory developed by Haug, Koch, Schmitt-Rink, and co-workers, generalized to include the finite width of the wells. The dynamics of the system is described by the equations that govern the evolution of the two counterpropagating fields, coupled with the carrier-density equation, and accompanied by the appropriate boundary conditions. The steady-state behavior is analyzed as a function of the control parameters of the system for the case of a GaAs/${\mathrm{Al}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}$As/AlAs structure. The system develops bistability even when the input field is in resonance with the excitonic peak, but the phenomenon becomes more pronounced in the detuned configuration. The hysteresis cycles obtained in the case of distributed-feedback device turn out to be competitive with those displayed by the Fabry-P\'erot system.

DOI
10.1103/physreva.45.5180

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The system we analyze has the structure of a planar optical waveguide containing a multiple quantum well, with the planes of the wells parallel to the direction of propagation. We consider the two different configurations of a Fabry-P'erot cavity and distributed-feedback device. The optical nonlinearities are described by means of the first-principles theory developed by Haug, Koch, Schmitt-Rink, and co-workers, generalized to include the finite width of the wells. The dynamics of the system is described by the equations that govern the evolution of the two counterpropagating fields, coupled with the carrier-density equation, and accompanied by the appropriate boundary conditions. The steady-state behavior is analyzed as a function of the control parameters of the system for the case of a GaAs/{\mathrm{Al}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}As/AlAs structure. The system develops bistability even when the input field is in resonance with the excitonic peak, but the phenomenon becomes more pronounced in the detuned configuration. The hysteresis cycles obtained in the case of distributed-feedback device turn out to be competitive with those displayed by the Fabry-P'erot system.
A theoretical demonstration of optical bistability in periodic layered media, particularly in long-period GaAs/AlAs superlattices is presented. The proposed structure consists of a periodic multilayer system, as opposed to previously demonstrated nonlinear bistable devices which employed Fabry-Perot etalons. The optical resonance effect which is essential for bistable devices is, in this case, induced by a refractive index modulation. The nonlinear active medium is distributed in the whole structure rather than placed between the two mirrors of a Fabry-Perot cavity. It is shown by a complete calculation of wave propagation in the periodic nonlinear medium that a multiple valued feature appears in the structure's nonlinear reflectivity spectrum. The input/output characteristics of the structure exhibit bistable hysteresis similar to that of a nonlinear Fabry-Perot etalon.>
A model is presented for the dynamical evolution of optical bistable devices based on Multiple Quantum Well structures, in which the electric field is near resonance with an excitonic line, and the parameters which appear in the equations are discussed. For room ternperature operation, examples of steady state response curves are presented. In conditions of adiabatic elimination of the exciton density and within the assumption of small carrier density, it is shown that the set of equations is equivalent to the well known model for optical bistability in two level systems.
We report on the observations of a nonlinear optical response in the radiation pulses transmitted by a multiple-quantum-well GaAs/Alx{\mathrm{Al}}_{\mathit{x}}Alx​${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As sample with a ridged waveguide configuration obtained by chemical etching. The nonlinear response is investigated through optical hysteresis obtained by plotting the transmitted power versus the input power. The physical conditions are complementary to those that characterize previous experiments in the field of optical bistability in multiple-quantum-well structures. The numerical simulations, obtained using the first-principles approach previously developed by some of us [G. P. Bava, F. Castelli, P. Debernardi, and L. A. Lugiato, Phys. Rev. A 45, 5180 (1992)], are in satisfactory qualitative and semiquantitative agreement with the experimental data. The numerical simulations also prove that optical bistability could be observed in ridged waveguide samples using cw laser sources.
Optical bistability can be obtained in nonlinear materials either with Fabry-Perot mirrors or without external feedback. When a material is placed between partially reflecting mirrors, a nonlinear Fabry-Perot etalon is formed with the etalon providing an external feedback. Optical bistability and gating occur as a result of a shift in the Fabry-Perot peak when the light intensity is increased (or when a second laser beam is introduced into the cavity). Optical bistability with the external feedback mechanism has been observed in many semiconductors such as bulk GaAs, GaAs-AIGaAs multiple-quantum-well (MQW) structures, InSb, InAs, CdS, CdHgTe, GaSe, and CuCI.