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Physics Letters A

Infrared-light propagation and storing through two lateral tunnel-coupled InGaAs/GaAs quantum dots

Jiahua Li, Rong Yu, Anshou Zheng, Xiaoxue Yang

Published Oct 25, 2008• 6 citations
Publisher
DOI
10.1016/j.physleta.2008.10.036

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We study the controlling of the Goos-Hänchen (GH) shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot (QD) nanostructures with electron tunneling and incoherent pumping field. It is shown that the lateral shift can become either large negative or large positive, which can be controlled by the electron tunneling and the rate of incoherent pump field in different incident angles. It is also demonstrated that the properties of the GH shifts are strongly dependent on the probe absorption beam of the intracavity medium due to the switching from superluminal light propagation to subluminal behavior or vice versa. Our suggested system can be considered as a new theoretical method for developing a new nano-optoelectronic sensor.